• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.4
• /
• pp.257-261
• /
• 2014

Carbon nanotubes (CNT) has the excellent physical characteristics in the sensor, medicine, manufacturing and energy fields, and it has been studied in those fields for the several years. We fabricated the NOx gas sensors of MOS-FET type using the MWCNT. The fabricated sensor was used to detect the NOx gas for the variation of $V_{gs}$ (gate-source voltage) with the ambient temperature. The gas sensor absorbed the NOx gas molecules showed the decrease of resistance, and the sensitivity of sensor was reduced by the NOx gas molecules accumulated on the MWCNT surface. Furthermore, when the voltage ($V_{gs}$) was applied to the gas sensor, the term of the decrease in resistance was increased. On the other hand, the sensor sensitivity for the injection of NOx gas was the highest value at the ambient temperature of $40^{\circ}C$. We also obtained the adsorption energy ($40^{\circ}C$) using the Arrhenius plots by the reduction of resistance due to the $V_{gs}$ voltage variations. As a result, we obtained that the adsorption energy also was increased with the increasement of the applied $V_{gs}$ voltages.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.1 no.2
• /
• pp.70-73
• /
• 1987

This paper itltroduces a simple stair-case PWM using the pseudo-sinusoidal method. In a configuration of controller, the value of sine as a fundamental factor divided into stair-case level and the three-phase PWM inverter is composed by digital compound for each value of stair-case level. The three-phase output pulse at a fixed carrier frequency and a variable reference frequency is obtained under the effect of reduced harmonics. In this experiment, using the power FET as the switching device, 0.5 H.P. induction motor operation is performed when the switching frequency is 20KHz.

• 전기의세계
• /
• v.14 no.6
• /
• pp.1-7
• /
• 1965

This paper provides the analysis of the differential amplifier using the insulated gate, metala-oxide-semiconductor type field-effect-transistor(MOS FET), for its active element and the power drift of the amplifer. From these analytical considerations some design standardsn were found for the MOS FET differential amplifier available for the measurement of the very small current (pico-ampare range). A differential amplifier was designed and built in the view of above considerations. Its equivalent input gate voltages of the thermal drift and the power drift were 0.57mV/.deg. C in the range 25.deg. C-60.deg. C and 8.8mV/V in the range of 20% drift of its orginal value, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.9
• /
• pp.589-595
• /
• 2017

MOS-FET structured gas sensors were manufactured using MWCNTs for application as NOx gas sensors. As the gas sensors need to be heated to facilitate desorption of the gas molecules, heat dispersion plays a key role in boosting the degree of uniformity of molecular desorption. We report the desorption of gas molecules from the sensor at $150^{\circ}C$ for different sensor electrode gaps (30, 60, and $90{\mu}m$). The COMSOL analysis program was used to verify the process of heat dispersion. For heat analysis, structure of FET gas sensor modeling was proceeded. In addition, a property value of the material was used for two-dimensional modeling. To ascertain the degree of heat dispersion by FEM, the governing equations were presented as partial differential equations. The heat analysis revealed that although a large electrode gap is advantageous for effective gas adsorption, consideration of the heat dispersion gradient indicated that the optimal electrode gap for the sensor is $60{\mu}m$.

• 제어로봇시스템학회:학술대회논문집
• /
• 1991.10b
• /
• pp.1920-1923
• /
• 1991

An online RF power measurement is needed for the full-bridged MOS-FET RF power inverter because the output current and/or voltage waveform is other than sinusoidal. In order to satisfy the requirement, the online measurement of the output power of this type of RF power inverter by the use of the PC-98 personal computer has been presented. The current and voltage waveforms are sensed by the digital oscilloscope probes so as to obtain the instantaeous power and they are entered into the PC98 personal computer so as to average the instantaneous powers. The RF power of up to 1 kw at 1 MHz measured for the power inverter at the output transformer. This method was confirmed to be applied to evaluate the load resistance change with temperature.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2012.05a
• /
• pp.67.1-67.1
• /
• 2012

Graphene has attracted much attention for future nanoelectronics due to its superior electrical properties. Owing to its extremely high carrier mobility and controllable carrier density, graphene is a promising material for practical applications, particularly as a channel layer of high-speed FET. Furthermore, the planar form of graphene is compatible with the conventional top-down CMOS fabrication processes and large-scale synthesis by chemical vapor deposition (CVD) process is also feasible. Despite these promising characteristics of graphene, much work must still be done in order to successfully develop graphene FET. One of the key issues is the process technique for gate dielectric formation because the channel mobility of graphene FET is drastically affected by the gate dielectric interface quality. Formation of high quality gate dielectric on graphene is still a challenging. Dirac voltage, the charge neutral point of the device, also strongly depends on gate dielectrics. Another performance killer in graphene FET is source/drain contact resistance, as the contact resistant between metal and graphene S/D is usually one order of magnitude higher than that between metal and silicon S/D. In this presentation, the key issues on graphene-based FET, including organic-inorganic hybrid gate dielectric formation, controlling of Dirac voltage, reduction of source/drain contact resistance, device structure optimization, graphene gate electrode for improvement of gate dielectric reliability, and CVD graphene transfer process issues are addressed.

• Transactions on Electrical and Electronic Materials
• /
• v.9 no.4
• /
• pp.169-172
• /
• 2008

We attempted to fabricate carbon nanotube field effect transistor (CNT-FET) using single walled carbon nanotube(SWNT) on the heavily doped Si substrate used as a bottom gate, source and drain electrode were fabricated bye-beam lithography on the 500 nm thick $SiO_2$ gate dielectric layer. We investigated electrical and physical properties of this CNT-FET using Scanning Probe Microscope(SPM) and conventional method based on tungsten probe tip technique. The gate length of CNT-FET was 600 nm and the diameter of identified SWNT was about 4 nm. We could observed gating effect and typical p-MOS property from the obtained $V_G-I_{DS}$ curve. The threshold voltage of CNT-FET is about -4.6V and transconductance is 47 nS. In the physical aspect, we could identified SWNT with phase mode of SPM which detecting phase shift by force gradient between cantilever tip and sample surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.118-119
• /
• 2009

This paper presents the feature profile evolution silicon deep trench etching, which is very crucial for the commercial wafer process application. The silicon deep trenches were etched with the SF6 gas & Hbr gas based process recipe. The optimized silicon deep trench process resulted in vertical profiles (87o~90o) with loading effect of < 1%. The process recipes were developed for the silicon deep trench etching applications. This scheme provides vertically profiles without notching of top corner was observed. In this study, the production of SF6 gas based silicon deep trench etch process much more strongly than expected on the basis of Hbr gas trench process that have been investigated by scanning electron microscope (SEM). Based on the test results, it is concluded that the silicon deep trench etching shows the sufficient profile for practical MOS FET silicon deep trench technology process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.10
• /
• pp.668-672
• /
• 2014

Carbon nanotubes(CNT) has chemical stability and great sensitivity characteristics. In particular, the gas sensor required characteristics such as rapid, selectivity and sensitivity sensor. Therefore, CNT are ideal materials to gas sensor. So, we fabricated the NOx gas sensors of MOS-FET type using the MWCNT (multi-walled carbon nanotube). The fabricated sensor was used to detect the NOx gas for the variation of $V_{gs}$(gate-source voltage) and electrode changed electrode spacing=30, 60, 90[${\mu}m$]. The gas sensor absorbed with the NOx gas molecules showed the decrease of resistance, and the sensitivity of sensor was increased by magnification of electrode spacing. Furthermore, when the voltage($V_{gs}$) was applied to the gas sensor, the decrease in resistance was increased. On the other hand, the sensor sensitivity for the injection of NOx gas was the highest value at the electrode spacing $90[{\mu}m]$. We also obtained the adsorption energy($U_a$) using the Arrhenius plots by the reduction of resistance due to the voltage variations. As a result, we obtained that the adsorption energy was increased with the increment of the applied voltages.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.6
• /
• pp.403-407
• /
• 2015

Generally, MWCNT, with thermal, chemical and electrical superiority, is manufactured with CVD (chemical vapor deposition). Using MWCNT, it is comonly used as gas sensor of MOS-FET structure. In this study, in order to repeatedly detect gases, the author had to effectively eliminate gases absorbed in a MWCNT sensor. So as to eliminate gases absorbed in a MWCNT sensor, the sensor was applied heat of 423[K], and in order to observe how the applied heat was diffused within the sensor, the author interpreted the diffusion process of heat, using COMSOL interpretation program. In order to interpret the diffusion process of heat, the author progressed modeling with the structure of MWCNT gas sensor in 2-dimension, and defining heat transfer velocity($u={\Delta}T/{\Delta}x$), accorded to governing equation within the sensor, the author proposed heat transfer mechanism.