• 한국통신학회논문지
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• 제27권5C호
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• pp.522-529
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• 2002

GaAs pHEMT 기술로 V-band 수신단 각 MMIC 회로들을 설계 제작하였다. 또한 이를 집적하여 V-band downconverter module을 제작하였다. 제작된 downconverter는 24 dBm의 출력을 내는 LO 구동 전력 증폭기, 20dB의 소신호 이득을 가지는 저잡음증폭기, -1.6dBm의 출력을 내는 active parallel type의 발진기, 6 dB 이상의 변환이득 특성을 나타내는 cascode type의 혼합기로 구성되어 있다. 이처럼 혼합기의 우수한 변환이득 특성은 밀리미터파 대역에서 변환 이득 특성을 키우기 위해 반드시 필요한 거대한 IF buffer amplifier의 필요를 없애 주었다. 완성된 downconverter module의 측정결과 별도의 IF buffer amplifier없이 57.5 GHz와 61.7 GHz 사이에서 20 dB 이상의 높은 변환이득을 얻을 수 있었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.191-194
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• 1999

The balanced amplifier is a practical amplifier to, implement a broadband amplifier that has flat gain and good input and output VSWR. Three-stage amplifier design procedure usually divided into three partition satisfying the following requirements : low noise figure, high gain and high power output. FHX35LG HEMT device is used in the design can be obtained low noise figure at the first-stage, MGA82563 MMIC device is used in the design can be maintained high gain at the second-stage, and AHI MMIC device is used in the design can be required high power output at the third-stage. The results of three-stage balanced amplifier show that power gain is about 40㏈, noise figure is less than 1.2㏈ at operating frequency.

• ETRI Journal
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• 제31권5호
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• pp.598-600
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• 2009

A highly efficient and compactly integrated balanced power amplifier (PA) for W-CDMA handset applications is presented. To overcome the size limit of a typical balanced PA, a bulky input divider is integrated into a PA MMIC, and a complex output network is replaced with simple lumped-element networks. For efficiency improvement at the low output power level, one of the two amplifiers in parallel is deactivated and the other is partially operated with corresponding load impedance optimization. The implemented PA shows excellent average current consumption of 34.5 mA in urban and 56.3 mA in suburban environments, while exhibiting very good load-insensitivity under condition of VSWR=4:1.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.327-330
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• 1998

A 2watts MMIC(Monolithic Microwave Integrated Circuits) SSPA(Solid State Power Amplifiers) for 20GHz band communication systems has been designed, manufactured and measured. The 0.15um pHEMT technologywith the gate size of 400um for single device was used for the fabrication of MMIC Power Amplifier chips. The precision MIC patterns for the peripherals like power combiner/divider and microstrip lines were realized using hard substrate for gold wire/ribbon bonding. The measured data shows that this MMIC SSPA has the linear gain of 18dB, output power of 33.42dBm(2.2Watts)at 20~21GHz.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.319-322
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• 1998

A 20 GHz 2-stage MMIC (Monolithic Microwave Integrated Circuits) LNA(Low Noise Amplifiers) has been designed. The pHEMT with gate length of 1.15 um has been used to provide ultra low noise and high gain amplification. Series and Shunt feedback circuits were interted to ensured high stability over frequency range of DC to 60 GHz. The size of designed MMIC LNA is 2285um x 2000um(4.57mm2). The simulated noise figure of MMIC LNA is less than 1.7 dB over frequency range of 20 GHz to 21 GHz.

• 대한전자공학회논문지TC
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• 제47권10호
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• pp.74-79
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• 2010

본 논문에서는 70 nm mHEMT MMIC 기술을 이용한 고이득 W-band 증폭기를 제시한다. W-band에서 고이득 특성을 얻기 위하여 공통 소스 FET의 소스 피드백 라인의 길이를 조절하면 설계 주파수에서 이득이 최대가 되도록 하였다. 이 라인의 길이를 조절하여 94 GHz에서 MAG를 0.8 dB 향상 시킬 수 있음을 시뮬레이션에서 확인하였다. 뿐만 아니라, 이 소스 피드백 라인은 FET의 입력 임피던스도 변화시켜 입력 정합을 용이하게 한다. 이 현상을 이용하여 공통 소스 FET 4단으로 이루어진 w-band 증폭기를 CPW로 설계하였다. 제작된 W-band 증폭기는 측정 결과 70~103 GHz에서 22.0 dB 이상의 아주 우수한 이득 특성을 보였다.

• 한국전자파학회논문지
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• 제12권1호
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• pp.65-70
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• 2001

본 연구에서는 CDMA 단말기요 Receiver MMIC를 설계하였다. 전체회로는 저잡음 증폭기, 하향 주파수 혼합기, 중간주파수 증폭기 그리고 바이어스 회로로 구성된다. 바이어스회로는 문턱전압과 전원접압의 변화에 대해 보상동작을 한다. 제안된 토폴리지는 높은 선형성과 저잡음 특성을 가진다. 설계결과는 다음과 같다. 전체 변환이득은 28.5 dB, 저잡음 증폭기의 압력은 IP3는 8 dBM, 하향주파수 혼합기의 압력 IP3는 0 dBm 이며 전체회로의 소모전류는 22.1 mA이다.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2000년도 종합학술발표회 논문집 Vol.10 No.1
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• pp.150-153
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• 2000

In this paper, we have designed a 2 stage MMIC power amplifier which has flat gains of in-band and reasonable out-band cutoff characteristics using 0.5$\mu\textrm{m}$ MESFET libra교 of ETRI. For the 1st stave, we obtaind P$_{1dB}$ of 9.2 dBm and gain 10.8 dB using 6 finger D-MESFET and P$_{1dB}$ of 18.4 dBm and gain of 10.8 dB using 14 finger D-MESFET for the 2nd stage, which is power matched using LIBRA's embedded TUNER. Also in-band gain flatness and out-band cutoff characteristics are obtained by attaching LC tank in the output matching circuit. The designed 2 stage MMIC power amplifier has bandwidth of 0.95～2.8 GHz, gain of 20 dB and P$_{1dB}$of 17.2 dBm. Especially gain flatness of $\pm$0.8dB was obtained in 1.8～2.5 GHz frequency ranges. And chip size is 1.4$\times$1.4 mm..4 mm.

• ETRI Journal
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• 제35권3호
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• pp.546-549
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• 2013

A Ka-band 6-W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15-${\mu}m$ GaAs pHEMT technology. This three-stage amplifier, with a chip size of 22.1 $mm^2$ can achieve a saturated output power of 6 W with a 21% power-added efficiency and 15-dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class-A bias and demonstrates an output third-order intercept point of greater than 43.5 dBm over the above-mentioned frequency range.

• Journal of electromagnetic engineering and science
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• 제9권4호
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• pp.218-222
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• 2009

In this paper, we present a CPW-based 77 GHz 3-stage power amplifier MMIC for automotive radar systems. The power amplifier MMIC has been realized using a 130 nm $In_{0.88}$GaP/$In_{0.4}$AlAs/$In_{0.4}$GaAs metamorphic high-electron mobility transistors(mHEMTs) technology and an output stage with a cascode configuration. This produced a good output power and gain performance at 77 GHz. The fabricated power amplifier MMIC exhibited a small-signal gain of 18 dB, an output power of 17 dBm and 9 % power added efficiency(PAE) at 77 GHz with a total gate width of 800 ${\mu}m$ in the output stage. These performances could be useful to low-cost and small-sized components for 77 GHz automotive radar systems.