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http://dx.doi.org/10.4218/etrij.13.0212.0407

A Ka-Band 6-W High Power MMIC Amplifier with High Linearity for VSAT Applications  

Jeong, Jin-Cheol (Broadcasting & Telecommunications Media Research Laboratory, ETRI)
Jang, Dong-Pil (Broadcasting & Telecommunications Media Research Laboratory, ETRI)
Yom, In-Bok (Broadcasting & Telecommunications Media Research Laboratory, ETRI)
Publication Information
ETRI Journal / v.35, no.3, 2013 , pp. 546-549 More about this Journal
Abstract
A Ka-band 6-W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15-${\mu}m$ GaAs pHEMT technology. This three-stage amplifier, with a chip size of 22.1 $mm^2$ can achieve a saturated output power of 6 W with a 21% power-added efficiency and 15-dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class-A bias and demonstrates an output third-order intercept point of greater than 43.5 dBm over the above-mentioned frequency range.
Keywords
Ka-band; microwave monolithic integrated circuit (MMIC); high power amplifier (HPA); linearity; output third-order intercept point (OIP3); very small aperture terminal (VSAT);
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