• Title/Summary/Keyword: MEMS fabrication

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Robust Optimal Design of a Decoupled Vibratory Microgyroscope Considering Fabrication Influence (공정영향을 고려한 비연성 진동형 마이크로 자이로스코프의 강건 최적 설계)

  • Jeong Hee-Moon;Ha Sung Kyu
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.28 no.8 s.227
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    • pp.1065-1074
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    • 2004
  • A robust optimal design considering fabrication influence has been performed for the decoupled vibratory microgyroscope fabricated by the bulk micromachining. For the analysis of the gyroscope, a design tool has been developed, by which user can perform the system level design considering electric signal process and the fabrication influence as well as mechanical characteristics. An initial design of the gyroscope is performed satisfying the performances of scale factor (or sensitivity) and phase delay, which depend on the frequency difference between driving and sensing resonant frequencies. The objective functions are formulated in order to reduce the variances of the frequency difference and the frequency in itself by fabrication error. To certify the results, the standard deviations are calculated through the Monte Caries Simulation (MCS) and compared initial deviation that is measured fabricated gyroscope chip.

Application of Au-Sn Eutectic Bonding in Hermetic Rf MEMS Wafer Level Packaging (Au-Sn 공정 접합을 이용한 RF MEMS 소자의 Hermetic 웨이퍼 레벨 패키징)

  • Wang Qian;Kim Woonbae;Choa Sung-Hoon;Jung Kyudong;Hwang Junsik;Lee Moonchul;Moon Changyoul;Song Insang
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.3 s.36
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    • pp.197-205
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    • 2005
  • Development of the packaging is one of the critical issues for commercialization of the RF-MEMS devices. RF MEMS package should be designed to have small size, hermetic protection, good RF performance and high reliability. In addition, packaging should be conducted at sufficiently low temperature. In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn eutectic bonding technology at the temperature below $300{\times}C$ is used. Au-Sn multilayer metallization with a square loop of $70{\mu}m$ in width is performed. The electrical feed-through is achieved by the vertical through-hole via filled with electroplated Cu. The size of the MEMS Package is $1mm\times1mm\times700{\mu}m$. By applying $O_2$ plasma ashing and fabrication process optimization, we can achieve the void-free structure within the bonding interface as well as via hole. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. Any organic gases or contamination are not observed inside the package. The total insertion loss for the packaging is 0.075 dB at 2 GHz. Furthermore, the robustness of the package is demonstrated by observing no performance degradation and physical damage of the package after several reliability tests.

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Modeling and Experimental Response Characterization of the Chevron-type Bi-stable Micromachined Actuator (Chevron형 bi-stable MEMS 구동기의 모델링 및 실험적 응답특성 분석)

  • 황일한;심유석;이종현
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.2
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    • pp.203-209
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    • 2004
  • Compliant bi-stable mechanism allows two stable states within its operation range staying at one of the local minimum states of the potential energy. Energy storage characteristics of the bi-stable mechanism offer two distinct and repeatable stable states, which require no power input to maintain it at each stable state. This paper suggests an equivalent model of the chevron-type bi-stable microactuator using the equivalent spring stiffness in the rectilinear and the rotational directions. From this model the range of spring stiffness where the bi-stable mechanism can be operated is analyzed and compared with the results of the FEA (Finite Element Analysis) using ANSYS for the buckling analysis, both of which show a good agreement. Based on the analysis, a newly designed chevron-type bi-stable MEMS actuator using hinges is suggested for the latch-up operation. It is found that the experimental response characteristics of around 36V for the bi-stable actuation for the 60$mu extrm{m}$ stroke correspond very well to the results of the equivalent model analysis after the change in cross-sectional area by the fabrication process is taken into account. Together with the resonance frequency experiment where 1760Hz is measured, it is shown that the chevron-type bi-stable MEMS actuator using hinges is applicable to the optical switch as an actuator.

Fabrication and measurement of RH/LH mode-switchable CRLH transmission line based on silicon RF MEMS switches (실리콘 RF MEMS 스위치 기반의 RH/LH 모드 스위칭이 가능한 CRLH 전송선 제작 및 측정)

  • Hwang, Sung-Hyun;Jang, Tae-Hee;Bang, Yong-Seung;Kim, Jong-Man;Kim, Yong-Kweon;Lim, Sung-Joon;Baek, Chang-Wook
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1507_1508
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    • 2009
  • This study proposes a composite right/left-handed transmission line (CRLH-TL) that permits switching between the right-handed (RH) and left-handed (LH) modes using single crystalline silicon (SCS) RF MEMS switches. It is possible to change modes from the RH to LH mode, or vice versa, by controlling the admittance of capacitors and the impedance of inductors using switch operations. The proposed switchable CRLH-TL consists of SCS RF MEMS switches, metal-insulator-metal (MIM) capacitors and shunt inductors. At 8 GHz, the fabricated device shows a phase response of $87^{\circ}$ with an insertion loss of 2.7 dB in the LH mode, and a phase response of $-77^{\circ}$ with an insertion loss of 0.56 dB in the RH mode.

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Three Dimensional Molecular Dynamics Simulation of Nano-Lithography Process for Fabrication of Nanocomponents in Micro Electro Mechanical Systems (MEMS) Applications (MEMS 부품 제조를 위한 나노 리소그래피 공정의 3차원 분자동력학 해석)

  • Kim, Young-Suk;Lee, Seung-Sub;Na, Kyoung-Hoan;Son, Hyun-Sung;Kim, Jin
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.27 no.10
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    • pp.1754-1761
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    • 2003
  • The atomic force microscopy (AFM) based lithographic technique has been used directly to machine material surface and fabricate nano components in MEMS (micro electro mechanical system). In this paper, three-dimensional molecular dynamics (MD) simulations have been conducted to evaluate the characteristic of deformation process at atomistic scale for nano-lithography process. Effects of specific combinations of crystal orientations and cutting directions on the nature of atomistic deformation were investigated. The interatomic force between diamond tool and workpiece of copper material was assumed to be derived from the Morse potential function. The variation of tool geometry and cutting depth was also evaluated and the effect on machinability was investigated. The result of the simulation shows that crystal plane and cutting direction significantly influenced the variation of the cutting forces and the nature of deformation ahead of the tool as well as the surface deformation of the machined surface.

A free standing metal structures for MEMS switches (MEMS switch 응용을 위한 free standing 금속 구조물에 관한 연구)

  • Hwang, Hyun-Suk;Kim, Eung-Kwon;Kang, Hyun-Il;Lee, Kyu-Il;Lee, Tae-Yong;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.187-188
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    • 2005
  • In this paper, big free standing metal structures for electrostatic MEMS switches are easily fabricated using photoresist sacrificial layer. The entire process sequence, through the removal of the sacrificial layer, is kept below 150 $^{\circ}C$ to avoid curing problem of photoresist sacrificial layer. Metal structure is fabricated by thermal evaporator and a self test electrode is fabricated underlying metal suspended structure for testing by electrostatic force. The new wet release process is considered using methanol rinse, general wet release process cause stiction problem by capillary force during drying, and the yield is dramatically improved than previous wet release process using DI water rinse. The fabrication becomes much simpler and cheaper with use of a photoresist sacrificial layer.

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Highly Productive Process Technologies of Cantilever-type Microprobe Arrays for Wafer Level Chip Testing

  • Lim, Jae-Hwan;Ryu, Jee-Youl;Choi, Woo-Chang
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.2
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    • pp.63-66
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    • 2013
  • This paper describes the highly productive process technologies of microprobe arrays, which were used for a probe card to test a Dynamic Random Access Memory (DRAM) chip with fine pitch pads. Cantilever-type microprobe arrays were fabricated using conventional micro-electro-mechanical system (MEMS) process technologies. Bonding material, gold-tin (Au-Sn) paste, was used to bond the Ni-Co alloy microprobes to the ceramic space transformer. The electrical and mechanical characteristics of a probe card with fabricated microprobes were measured by a conventional probe card tester. A probe card assembled with the fabricated microprobes showed good x-y alignment and planarity errors within ${\pm}5{\mu}m$ and ${\pm}10{\mu}m$, respectively. In addition, the average leakage current and contact resistance were approximately 1.04 nA and 0.054 ohm, respectively. The proposed highly productive microprobes can be applied to a MEMS probe card, to test a DRAM chip with fine pitch pads.

Anodic bonding characteristics of MCA to Si-wafer using pyrex #7740 glass intermediatelayer for MEMS applications (파일렉스 #7740 글라스 매개층을 이용한 MEMS용 MCA와 Si기판의 양극접합 특성)

  • Ahn, Jung-Hac;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.374-375
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    • 2006
  • This paper describes anodic bonding characteristics of MCA to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with the same properties were deposited on MCA under optimum RF sputter conditions (Ar 100 %, input power $1\;W/cm^2$). After annealing at $450^{\circ}C$ for 1 hr, the anodic bonding of MCA to Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in $110^{-6}$ Torr vacuum condition. Then, the MCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation and simulation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity being 0.05-0.08 %FS. Moreover, any damages or separation of MCNSi bonded interfaces did not occur during actuation test. Therefore, it is expected that anodic bonding technology of MCNSi-wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

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