• 제목/요약/키워드: M2 polarization

검색결과 643건 처리시간 0.025초

The Effect of Imidazole and 2-Methyl Imidazole on the Corrosion of Mild Steel in Phosphoric Acid Solution

  • Chandrasekara, V.;Kannan, K.;Natesan, M.
    • Corrosion Science and Technology
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    • 제4권5호
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    • pp.191-200
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    • 2005
  • Two azole compounds viz., Imidazole (IM) and 2-Methylimidazole (2-MIM) were studied to investigate their inhibiting action on corrosion of mild steel in phosphoric acid ($H_3PO_4$) solution by mass loss and polarization techniques at 302K-333K. It has been found that the inhibition efficiency of the all inhibitors increased with increase in inhibitor concentration and decreases with increasing temperature and also with increase in acid concentrations. The inhibition efficiency of these compounds showed very good inhibition efficiency. At 0.5% of IM and 2-MIM in 1N and 5N phosphoric acid solution at 302K to 333K for 5 hours immersion period, the inhibition efficiency of 2-Methylimidazole found to be higher than Imidazole. The adsorption of these compounds on the mild steel surface from the acids has been found to obey Tempkin's adsorption isotherm. The values of activation energy ($E{\alpha}$) and free energy of adsorption (${\Delta}G{\alpha}ds$) were also calculated. The plots of log $W_f$ against time (days) at 302K give straight line which suggested that it obeys first order kinetics and also calculate the rate constant k and half life time $t_{1/2}$. Surface was analyzed by SEM and FITR spectroscopy.

트렌치 구조를 이용한 저전력 1×2 폴리머 열 광학 스위치의 제작 (Fabrication of a low-power 1×2 polymeric thermo-optic switch with a trench structure)

  • 여동민;김기홍;신상영
    • 한국광학회지
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    • 제14권1호
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    • pp.33-37
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    • 2003
  • 트렌치 구조를 이용한 저전력 1$\times$2 폴리머 열 광학 스위치를 제안하고 제작하였다. 최적의 위치에 적절히 형성된 트렌치 구조는 전극으로부터 발생한 열 흐름을 방해하여 전력 소보를 줄이는데 기여할 수 있다 광 도파로를 구성하는 폴리머 층에서의 온도 분포가 변하여 Y-분기를 이루는 두 도파로들 사이의 온도 기울기가 급격하게 증가하기 때문이다. 본 실험에서는 트렌치 구조의 효과를 비교 분석하기 위해 트렌치 구조가 없는 1$\times$2 폴리머 열 광학 스위치도 동일한 기판 위에 함께 제작하였다. 트렌치 구조를 이용한 열 광학 스위치의 경우, 측정된 누화는 TE 편광에서 -17.0 dB 이하. TM 편광에서 -15.0 dB 이하였다 전력 소모는 트렌치 구조가 없는 열 광학 스위치의 소모 전력보다 25% 감소한 약 66 ㎽였다.

A Newly Developed Non-Cyanide Electroless Gold Plating Method Using Thiomalic Acid as a Complexing Agent and 2-Aminoethanethiol as a Reducing Agent

  • Han, Jae-Ho;Lee, Jae-Bong;Van Phuong, Nguyen;Kim, Dong-Hyun
    • Corrosion Science and Technology
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    • 제21권2호
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    • pp.89-99
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    • 2022
  • A versatile method for performing non-cyanide electroless gold plating using thiomalic acid (TMA) as a complexing agent and 2-aminoethanethiol (AET) as a reducing agent was investigated. It was found that TMA was an excellent complexing agent for gold. It can be used in electroless gold plating baths at a neutral pH with a high solution stability, makes it a potential candidate to replace conventional toxic cyanide complex. It was found that one gold atomic ion could bind to two TMA molecules to form the [2TMA-Au+] complex in a solution. AET can be used as a reducing agent in electroless gold plating solutions. The highest current density was obtained at electrode rotation rate of 250 to 500 rpm based on anodic and cathodic polarization curves with the mixed potential theory. Increasing AET concentration, pH, and temperature significantly increased the anodic polarization current density and shifted the plating potential toward a more negative value. The optimal gold ion concentration to obtain the highest current density was 0.01 M. The cathodic current was higher at a lower pH and a higher temperature. The current density was inversely proportional to TMA concentration.

RELATIONSHIP BETWEEN THE SURFACE ROUGHNESS PARAMETERS AND THE RADAR BACKSCATTER OF A BARE SURFACE

  • Oh, Yi-Sok;Hong, Jin-Yong
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 2006년도 Proceedings of ISRS 2006 PORSEC Volume I
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    • pp.520-523
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    • 2006
  • Whereas it is well known that the surface roughness parameters, the RMS height and the correlation length, of a natural soil surface are underestimated with a short surface profile, it is not clear how much the underestimated surface parameters affect the backscattering coefficients of the surface for various incidence angles and polarizations. The backscattering coefficients of simulated and measured surface profiles are computed using the integral equation method (IEM) and analyzed in this paper to answer this question. It is shown that the RMS error of the backscattering coefficients between 5-m- and 1-m-long measured surface profiles is 1.7 dB for vv-polarization and 0.5 dB for hh-polarization at a medium range of incidence angle ($15^{\circ}{\leq}{\theta}{\leq}70^{\circ}$), while the surface roughness parameters are significantly reduced; from 2.4 cm to 1.5 cm for the RMS height s and from 35.1 cm to 10.0 cm for the autocorrelation length l. This result is verified with numerous simulations with various roughness conditions and various wavelengths.

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Sol-Gel법으로 제조한 (Ba,Sr)$TiO_3$박막의 전기적 특성 (Electrical Properties of the (Ba,Sr)$TiO_3$Thin Films Prepared by Sol-Gel Method)

  • 이영희;이문기;정장호;류기원
    • 한국전기전자재료학회논문지
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    • 제13권7호
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    • pp.592-597
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    • 2000
  • In this study (B $a_{0.5}$/S $r_{0.5}$)Ti $O_3$[BST(50/50)] ceramic thin films were prepared by the Sol-Gel method BST(50/50) stock solution was made and spin-coated on the Indium Tin Oxide(ITO)/glass substrate at 4000 rpm for 30 seconds. The coated films were dried at 35$0^{\circ}C$ for 10 minutes and annealed at 650~75$0^{\circ}C$ for 1 hour. The microstructural properties of the BST(50/50) thin film were studied by the XRD and AFM. The ferroelectric perovskite phase was formed at the annealing condition of 75$0^{\circ}C$ for 1 hour. Dielectric constant and loss of this thin were 370, 3.7% at room temperature respectively. The polarization switching voltage showed the good value of 3V. The leakage current density of the BST(50/50) thin film was 10$^{-7A}$c $m^2$with applied voltage of 1.5V. BST(50/50) thin film capacitors having good dielectric and electrical properties are expecting for the application to the dielectric material of DRAM.RAM.M.

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Experimental Investigation and Quantum Chemical Calculations of Some (Chlorophenyl Isoxazol-5-yl) Methanol Derivatives as Inhibitors for Corrosion of Mild Steel in 1 M HCl Solution

  • Sadeghzadeh, Rogayeh;Ejlali, Ladan;Eshaghi, Moosa;Basharnavaz, Hadi;Seyyedi, Kambiz
    • Corrosion Science and Technology
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    • 제18권5호
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    • pp.155-167
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    • 2019
  • In this study, two novel Schiff base compounds including (3-(4-Chlorophenyl isoxazole-5-yl) methanol and (3-(2,4 dichlorophenol isoxazole-5-yl) methanol as corrosion inhibitors for mild steel in 1 M hydrochloric acid solution were investigated by potentiodynamic polarization, electrochemical impedance spectroscopy (EIS), and density functional theory (DFT) computations. The results showed that the corrosion inhibition efficiency (IE) is remarkably enhanced with the growing concentration of the Schiff base inhibitors. The results from Tafel polarization and EIS methods showed that IE decreases with gradual increments of temperature. This process can be attributed to the displacement of the adsorption/desorption balance and hence to the diminution of the level of a surface coating. Also, the adsorption of two inhibitors over mild steel followed the Langmuir adsorption isotherm. Too, the results of the scanning electron microscope (SEM) images showed that the Schiff base inhibitors form an excellent protective film over mild steel and verified the results by electrochemical techniques. Additionally, the results from the experimental and those from DFT computations are in excellent accordance.

수종 치과용 자석유지장치의 부식저항성에 대한 전기화학적 연구 (THE ELECTROCHEMICAL STUDY ON CORROSION RESISTANCE OF VARIOUS DENIAL MAGNETIC ATTACHMENTS)

  • 손병섭;장익태;허성주;곽재영
    • 대한치과보철학회지
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    • 제39권4호
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    • pp.336-350
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    • 2001
  • The purpose of this study was to investigate corrosion tendency and to compare corrosion resistance of three dental magnetic attachments and its keeper alloy by coercive, electrochemical method. By using petentiodynamic polarization technique, magnetic elements and its keeper alloy of Magfit EX600 system(MF, MFK), Dyna ES regular system(DN, DNK) and Shiner SR magnet system(SR, SRK) were corroded electrochemically in 0.9% NaCl electrolytic solution. Open-circuit potential and anodic polarization curve was measured with Potentiostat(model 273 EG&E) and polarization curve was created by current density per square area following scanning of increased series of voltage in the rate of 1.0mV per second. Before and after electrochemical corrosion, the surface roughness test was done. Thereafter the change of mean surface roughness value(Ra) and mean peak value(Rt) of surface roughness was compared one another. In order to observe the corroded surface of each specimen, metallurgical light microscopic(${\times}37.5$) and scanning electron microscopic view(SEM ${\times}100$) was taken and compared one another. Conclusion is followings. 1. All of six covering metal of dental magnetic attachments and its keeper alloy were corroded in various degree after electrochemical corrosion. 2. The corrosion resistance of which used in this experiment is the following in high order; DNK, MFK, DN, MF, SRK and SR. 3. Especially Shiner magnet system and its keeper alloy were more severely corroded after electrochemical corrosion and the change of Ra Rt value were more increased than others. 4 Metallurgical and scanning electron microscopic view showed the pitting corrosion tendency of all experimental alloy but DNK and SR. 5. Covering metal of magnet was more corroded than its keeper alloy.

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에어로졸 증착법에 의한 압전 PZT 후막의 전기적 특성 (Electrical properties of piezoelectric PZT thick film by aerosol deposition method)

  • 김기훈;방국수;박동수;박찬
    • 한국결정성장학회지
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    • 제25권6호
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    • pp.239-244
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    • 2015
  • 에어로졸 증착법에 의해 실리콘 기판위에 $10{\sim}20{\mu}m$의 두께를 가진 PZT 후막을 제조한 후 $700^{\circ}C$에서 어닐링처리하였다. PZT 분말에 의해 제조된 막은 임피던스 분석기(impedance analyzer)와 쇼여-타워 서킷(Sawyer-Tower circuit)으로 분석하였다. PZT 분말은 통상적인 고상반응법 및 솔-젤 법으로 준비되었다. 고상반응법으로 만들어진 분말을 사용한 $10{\mu}m$ 두께 PZT 막의 잔류분극, 항전계 및 유전상수는 각각 $20{\mu}C/cm^2$, 30 kV/cm 그리고 1320이었다. 한편 솔-젤 법으로 제조된 분말을 사용한 경우의 유전상수는 635로 비교적 낮은 값을 나타낸다. 이는 어닐링시 생기는 발생하는 유기물에 의한 기공의 존재 때문이다.

Sol-gel법에 의한 $Pb(Zr_xTi_{1-x})O_3$ 강유전 박막의 전기특성 (Electrical properties of $Pb(Zr_xTi_{1-x})O_3$ferroelectric thin films prepared by sol-gel processing)

  • 백동수;박창엽
    • E2M - 전기 전자와 첨단 소재
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    • 제9권2호
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    • pp.132-137
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    • 1996
  • Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

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Growth of ZnSnO3 Thin Films on c-Al2O3 (0001) Substrate by Pulsed Laser Deposition

  • Manh, Trung Tran;Lim, Jae-Ryong;Yoon, Soon-Gil
    • 한국전기전자재료학회논문지
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    • 제27권5호
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    • pp.297-302
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    • 2014
  • $La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrode thin films with a resistivity of ~ 1,600 ${\mu}{\Omega}cm$ were grown on c-$Al_2O_3$ (0001) substrate. $ZnSnO_3$ (ZTO) thin films with different thicknesses were directly grown on LSCO/c-$Al_2O_3$ (0001) substrates at a substrate temperature that ranged from 550 to $750^{\circ}C$ using Pulsed Laser Deposition (PLD). The secondary phase $Zn_2SnO_4$ occurred during the growth of ZTO films and it became more significant with further increasing substrate temperature. Polarization-electric-field (P-E) hysteresis characteristics, with a remnant polarization and coercive field of 0.05 ${\mu}C/cm^2$ and 48 kV/cm, respectively, were obtained in the ZTO film grown at $700^{\circ}C$ in 200 mTorr.