Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Electrical Properties of the (Ba,Sr)$TiO_3$Thin Films Prepared by Sol-Gel Method

Sol-Gel법으로 제조한 (Ba,Sr)$TiO_3$박막의 전기적 특성

  • Published : 2000.07.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this study (B $a_{0.5}$/S $r_{0.5}$)Ti $O_3$[BST(50/50)] ceramic thin films were prepared by the Sol-Gel method BST(50/50) stock solution was made and spin-coated on the Indium Tin Oxide(ITO)/glass substrate at 4000 rpm for 30 seconds. The coated films were dried at 35$0^{\circ}C$ for 10 minutes and annealed at 650~75$0^{\circ}C$ for 1 hour. The microstructural properties of the BST(50/50) thin film were studied by the XRD and AFM. The ferroelectric perovskite phase was formed at the annealing condition of 75$0^{\circ}C$ for 1 hour. Dielectric constant and loss of this thin were 370, 3.7% at room temperature respectively. The polarization switching voltage showed the good value of 3V. The leakage current density of the BST(50/50) thin film was 10$^{-7A}$c $m^2$with applied voltage of 1.5V. BST(50/50) thin film capacitors having good dielectric and electrical properties are expecting for the application to the dielectric material of DRAM.RAM.M.

Keywords

References

  1. 요업 재료의 과학과 기술 v.9 no.6 고유전율 박막재료의 ULSI-DRAM에서의 응용현호아과 전망 황철성
  2. UMI dissertation services Processing/Structure/Property relationships of Barium Strontium Titanate Thin Films for Dynamic Random Access Memory Application Peng, Cheng Jien
  3. Mat. Res. Soc. Symp. Proc. v.433 Influence of Strontium Concentration on the Microstructure and Electrixal properties of Sol-Gel derived Barium Strontium Titanate thin films M. C. Gust(et al.)
  4. 제 4회 한국 반도체 학술대회 논문집 Ir Thin Films as a Bottom Electrode for High Dielectric (Ba,Sr)Tio₃ Capacitor 차선용(외)
  5. Brit. Ceram. Proc. v.36 Sol-Gel Processing of PbTio₃,PbZrO₃,PZT,PLZT Thin Film K. D. Budd;S. U. Dye;D. A. Payne
  6. 전자재료 세라믹스
  7. 제4회 한국 반도체학술대회 논문집 Calculation of Trap Dsnsities between BST/Pt interface from Capacitance Annealing Effect for DRAM Capacitor Application 곽동하(외)
  8. 대한전기학회 1997년도 하계학술대회 논문집 반응성 스터퍼링으로 형성된 ITO의 유전체 소성중 특성변화 남상옥(외)
  9. PZT(20/80)/(80/20) 이종층 박막의 유전특성 및 메모리소자 응용에 관한 연구 심광택
  10. Jpn. J. Appl. Phys. v.33 Dielectric Properties of $(Ba_xSr_{1-x})TiO_3$ Thin Film Prepared by RF. Sputtering for Dynamic Random Access Memory Application Takeharu(et at.)
  11. 응용물리;The Korean Physical Society v.9 no.1 강유전성 Pb(Zr,Ti)O₃박막 Capacitor의 전류-전압 특성의 온도 의존도 이광배(외)