• Analytical Science and Technology
• /
• v.9 no.1
• /
• pp.26-34
• /
• 1996

A method to determine the trace amount of Se and Bi in the scalp hair using the hydride generation inductively coupled plasma atomic emmission spectrometry was studied. The optimum operation conditions of ICP for hydride generation are 0.6~0.8L/min for the carrier gas flow rate, and 6mm above the induction coil for the observation height. Hydrochloric acid concentrations for the optimum hydride generation conditions were greater than 1.5M when 2.5% $NaBH_4$ and NaOH were used, and greater than 0.5M when 2.5% $NaBH_4$ and 0.1% NaOH were used. Severe interference effects are observed from transition metals such as Cu and Ni, and they could be circumvented by the coprecipitation with lanthanum hydroxide.

• Journal of the Korean Vacuum Society
• /
• v.7 no.2
• /
• pp.161-168
• /
• 1998

Reactive ion etching process for InGaAs/InP using the CH4/H2 high density inductively coupled plasma was investigated. The experimental design method proposed by Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power mainly affects surface roughness and verticality of the sidewall, bias power does etch rate and verticality, CH4 gas concentraion does the verticality and etch rate, and the distance between the induction coil and specimen mostly affects the surface roughness. It was also observed that the chamber pressure is the dominant parameter for the etch rate and verticality of the sidewall. The optimum condition was ICP power 700W, bias power 150 W, 15% $CH_4$, 7.5 mTorr, and 14 cm distance, resulting in about 3 $\mu\textrm{m}$/hr etch rate with smooth surfaces and vertical mesa sidewalls.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.27 no.2
• /
• pp.75-79
• /
• 2017

Honeycomb-shaped Ag-grid transparent conductive electrodes (TCEs) were fabricated using two different processes, high density plasma etching and lift-off, and the optical and electrical properties were compared according to the fabrication method. For the fabrication of the Ag-grid TCEs by plasma etching, etch characteristics of the Ag thin film in $10CF_4/5Ar$ inductively coupled plasma (ICP) discharges were studied. The Ag etch rate increased as the power increased at relatively low ICP source power or rf chuck power conditions, and then decreased at higher powers due to either decrease in $Ar^+$ ion energy or $Ar^+$ ion-assisted removal of the reactive F radicals. The Ag-grid TCEs fabricated by the $10CF_4/5Ar$ ICP etching process showed better grid pattern transfer efficiency without any distortion or breakage in the grid pattern and higher optical transmittance values of average 83.3 % (pixel size $30{\mu}m/line$ width $5{\mu}m$) and 71 % (pixel size $26{\mu}m/line$ width $8{\mu}m$) in the visible range of spectrum, respectively. On the other hand, the Ag-grid TCEs fabricated by the lift-off process showed lower sheet resistance values of $2.163{\Omega}/{\square}$ (pixel size $26{\mu}m/line$ width $18{\mu}m$) and $4.932{\Omega}/{\square}$ (pixel size $30{\mu}m/line$ width $5{\mu}m$), respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.5
• /
• pp.424-428
• /
• 2003

The channel of a superconducting flux flow transistor has been fabricated with plasma etching method using a inductively coupled plasma etching. The ICP conditions then were ICP Power of 450 W, rf chuck power of 150 W, the pressure in chamber of 5 mTorr, and Ar : Cl$_2$=1:1. Especially, over the 5 mTorr, the superconducting thin films were not etched. The channel etched by plasma gas showed the critical temperature over 85 K. The critical current of the SFFT was altered by varying the external applied current. As the external applied current increased from 0 to 12 mA, the critical current decreased from 28 to 22 mA. Then the obtained trans-resistance value was smaller than 0.1 $\Omega$ at a bias current of 40 mA.

• Bulletin of the Korean Chemical Society
• /
• v.25 no.2
• /
• pp.233-236
• /
• 2004

Total impurity analysis of a primary standard solution is one of the essential procedures to determine an accurate concentration of the standard solution by the gravimetry. Bi impurity is determined in Pb standard solutions by inductively coupled plasma mass spectrometry (ICP-MS). The direct nebulization of the Pb standard solution produces a significant amount of the Pb matrix-induced molecular ions which give rise to a serious spectral interference to the Bi determination. In order to avoid the spectral interference from the interferent $^{208}PbH^+$, the hydride generation method is employed for the matrix separation. The Bi hydride vapor is generated by reaction of the sample solution with 1% sodium borohydride solution. The vapor is then directed by argon carrier gas into the ICP after separation from the mixture solution in a liquid-gas separator made of a polytetrafluoroethylene membrane tube. The presence of 1000 ${\mu}$g/mL Pb matrix caused reduction of the bismuthine generation efficiency by about 40%. The standard addition method is used to overcome the chemical interference from the Pb matrix. Optimum conditions are investigated for the hydride-generation ICPMS. The detection limit of this method is 0.5 pg/mL for the sample solutions containing 1000 ${\mu}$g/mL Pb matrix.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
• /
• v.33 no.5
• /
• pp.443-451
• /
• 2015

In photogrammetry, GCPs (Ground Control Points) have traditionally been used to determine EOPs (Exterior Orientation Parameters) and to produce DEM (Digital Elevation Model). The existing DEM can be used as GCPs, where the observer’s approach is a difficult area, because it is very restrictive to survey in the field. For this, DEM matching should be performed. This study proposed the fusion method using ICP (Iterative Closest Point) and RT (proposed method by Rosenholm and Torlegard, 1988) in order to improve accuracy of the DEM matching. The proposed method was compared to the ICP method to evaluate its usefulness. Pseudo reference DEM with resolution 10m, and modified DEM (random-numbers are added from 0 to 2 at height; scale is 0.9; translation is 100 meters in 3-D axes; rotation is from 10° to 50° from the reference DEM) were used in the experiment. The results proposed accuracy was highest in the matching and absolute orientation. In the case of ICP, according to rotation of the modified DEM being increased, absolute orientation error is increased, while the proposed method generally showed consistent results without increasing the error. The proposed method would be applied to matching when the DEM is modified up to 30° rotation, compared to the reference DEM, based on the results of experiments. In addition when we use Drone, this method can be utilized to identify EOPs or detect 3-D surface deformation from the existing DEM of the inaccessible area.

• Journal of the Korean Chemical Society
• /
• v.37 no.9
• /
• pp.813-819
• /
• 1993

An ICP-AES system directly connected with a separation column was used in order to determine the trace elements in $UO_2$ powder promptly and reduce the volume of the waste solution. The outlet of a separation column, which was filled with Teflon powder ($330\;{\mu}m$) coated with tri-n-butyl phosphate (TBP) as extractant, was directly connected with sample injection tube of ICP-AES. Eleven elements including molybdenum in $UO_2$ powder were separated and determined simultaneously. Recoveries of these elements were $91{\sim}110%$ and these results were agreed with those of solvent extraction methods. This method was applicable to quality control in manufacturing nuclear fuel.

• Korean Journal of Materials Research
• /
• v.13 no.10
• /
• pp.635-639
• /
• 2003

We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.31-36
• /
• 2003

We investigated dry etching of GaAs and AlGaAs in a high density planar inductively coupled plasma system with $BCl_3$ and $BCl_3/Ar$ gas chemistry. A detailed process study as a function of ICP source power, RIE chuck power and $BCl_3/Ar$ mixing ratio was performed. At this time, chamber pressure was fixed at 7.5 mTorr. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RE chuck power. It was also found that etch rate of GaAs in $BCl_3$ gas with 25% Ar addition was superior to that of GaAs in a pure $BCl_3$ (20 sccm $BCl_3$) plasma. The result was same with AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AIGaAs features etched at 20 sccm $BCl_3$ and $15BCl_3/5Ar$ with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• Korean Journal of Fisheries and Aquatic Sciences
• /
• v.56 no.3
• /
• pp.284-292
• /
• 2023

This study was conducted to optimize the cookie preparation using Israeli crap Cyprinus carpio paste (C-ICP). The results of response surface methodology suggested the selection of other supplementary materials/[soft flour (SF) + ICP] (X₁) and SF/ICP (X₂) as independent variables, and hardness (Y₁), yellowness (Y₂), amino acid nitrogen (Y₃), and overall sensory acceptance (Y₄) as dependent variables. The optimal conditions of OS, SF, and ICP were 35.0%, 40.3% and 24.7%, respectively, and the predicted values of the multiple response optimal conditions Y₁, Y₂, Y₃, and Y₄ were 2,006.2 N/m2, 21.1, 30.0 mg/100 g, and a score of 6.6, respectively. Under the optimum conditions, experimental values of Y₁, Y₂, Y₃, and Y₄ were 2,010.5 ± 22.3 N/m2, 21.6 ± 0.5, 29.6 ± 0.7 mg/100 g, and a score of 6.9 ± 0.3, respectively, which were not significantly different from the predicted values (P < 0.05). The results on hardness, moisture, VCI yellowness, and lightness suggested that the optimum heating period was 20 min. C-ICP prepared under the optimum conditions was superior in sensory evaluation to cookies without the Israeli carp paste.