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http://dx.doi.org/10.4313/JKEM.2003.16.5.424

Superconducting Flux flow Transistor using Plasma Etching  

강형곤 (전북대학교 반도체물성연구소)
고석철 (전북대 전기공학과)
최명호 (광주보건대학 의료정보공학과)
한윤봉 (전북대 화학공학부)
한병성 (전북대 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.5, 2003 , pp. 424-428 More about this Journal
Abstract
The channel of a superconducting flux flow transistor has been fabricated with plasma etching method using a inductively coupled plasma etching. The ICP conditions then were ICP Power of 450 W, rf chuck power of 150 W, the pressure in chamber of 5 mTorr, and Ar : Cl$_2$=1:1. Especially, over the 5 mTorr, the superconducting thin films were not etched. The channel etched by plasma gas showed the critical temperature over 85 K. The critical current of the SFFT was altered by varying the external applied current. As the external applied current increased from 0 to 12 mA, the critical current decreased from 28 to 22 mA. Then the obtained trans-resistance value was smaller than 0.1 $\Omega$ at a bias current of 40 mA.
Keywords
Superconducting Flux Flow Transistor; Inductively coupled plasma; Channel; Trans-resistance;
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Times Cited By KSCI : 4  (Citation Analysis)
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