• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.29-33
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• 2002

본 논문은 자기 바이어스(self bias)를 이용한 PCS 대역용 하이브리드 전력 저잡음 증폭기(power LNA) 모듈에 관한 것으로 GaAs p-HEMT 칩을 세라믹 기판에 실장하여 와이어 본딩과 주변 매칭을 통해 고주파 손실을 줄이고 온도 변화에 대한 안정성과 1.2㏈의 저잡음, 21~23㏈m의 P$_1$㏈를 실현하였다. 10mm$\times$10mm 크기로 표면 실장이 되도록 단자를 cut-line 형태로 모듈화 하여 안정성과 신뢰성을 향상시켰고 또한 저가격화를 실현하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.885-888
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• 2008

We present simulation results on DC characteristics of AlGaN/GaN HEMTs having trench shaped source/drain Ohmic electrodes. In order to reduce the contact resistance in the source and drain region of the conventional AlGaN/GaN HEMTs and thereby to increase their DC output power, we applied narrow-shaped-trench electrode schemes whose size varies from $0.5{\mu}m$ to $1{\mu}m$ to the standard AlGaN/GaN HEMT structure. As a result, we found that the drain current was increased by 13 % at the same gate bias condition and the transconductance (gm) was improved by 11 % for the proposed AlGaN/GaN HEMT, compared with those of the conventional AlGaN/GaN HEMTs.

• Journal of electromagnetic engineering and science
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• v.17 no.4
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• pp.178-180
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• 2017

This study presents a 2-20 GHz monolithic distributed power amplifier (DPA) using a $0.25{\mu}m$ AlGaN/GaN on SiC high electron mobility transistor (HEMT) technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a non-uniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC) are 35.3-38.6 dBm and 11.4%-31%, respectively, for 2-20 GHz.

• ETRI Journal
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• v.33 no.5
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• pp.818-821
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• 2011

A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.9
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• pp.19-24
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• 2004

In this paper, we have demonstrated the fabrication of a 70 nm foot print of the T-gate by using a positive resist ZEP520/P(MMA-MAA)/PMMA trilayer by double exposure method without a thin dielectric supporting layer on the substrate. The device performance was characterized by DC and RF measurement. The fabricated 70 nm InGaAs/InAlAs MHEMTS with 70 ${\mu}{\textrm}{m}$ unit gate width and 2 fingers showed good DC and RF characteristics of Idss, max =228.6 mA/mm, gm =645 mS/mm, and fT =255 GHz, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.7
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• pp.1044-1052
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• 1999

A 2-stage 1 watt MMIC(Monolithic Microwave Integrated Circuits) HPA(High Power Amplifiers) at 20 GHz band has been designed and fabricated. The $0.15\mu\textrm{m}$ with the width of $400\mu\textrm{m}$for single device pHEMT technology was used for the fabrication of this MMIC HPA. Due to the series feedback technique from source to ground, bias circuits and stabilization circuits on the main microstrip line, the stability factors(Ks) are more than one at full frequency. The independent operation for each stage and excellent S11, S22 less than -20 dB have been obtained by using lange couplers. For beginning the easy design, linear S-parameters have been extracted from the nonlinear equivalent circuit in foundry library, and equivalent circuits of devices at in/output ports were calculated from this S-parameters. The measured performances, which are in well agreement with the predicted ones, showed the MMIC HPA in this paper has the minimum 15 dB of linear gain, -20 dB of reflection coefficients and 31 dBm of output power over 17~25 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.1
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• pp.76-79
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• 2016

This paper describes the successful development and the performance of X-band 50 W pulsed power amplifier using a 50 W GaN-on-SiC high electron mobility transistor. The GaN HEMT with a gate length of $0.25{\mu}m$ and a total gate width of 12 mm were fabricated. The X-band pulsed power amplifier exhibited an output power of 50 W with a power gain of 6 dB in a frequency range of 9.2~9.5 GHz. It also shows a maximum output power density of 4.16 W/mm. This 50 W GaN HEMT and X-band 50 W pulsed power amplifier are suitable for the radar systems and related applications in X-band.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.207-214
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• 2005

This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.10
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• pp.892-899
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• 2016

In this paper, an X-band 50 W internally matched power amplifier is designed and fabricated using an $80{\times}150{\mu}m$ GaN HEMT that is developed by the $0.25{\mu}m$ GaN HEMT process of ETRI. The optimum source and load impedances are experimentally extracted from the loadpull measurement using impedance-transform-prematching circuits, and the transistor performance is predicted. The power performance of the internally matched power amplifier, whose matching circuits are fabricated on a substrate with ${\varepsilon}_r$ of 10.2, is measured under the pulsed mode of $100{\mu}s$ pulse period and 10 % duty cycle, and the best output power of 47.46 dBm(55.5 W) and the power-added efficiency of 46.6 % are obtained at 9.2 GHz. The output power of 47~47.46 dBm(50~55.7 W) is measured in 9.0~9.5 GHz, and the power-added efficiency is measured to be greater than 43 % in 9.0~9.3 GHz and above 36 % in 9.4~9.5 GHz.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.9
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• pp.13-20
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• 1999

A 2-stage MMIC(monolithic Microwave Integrated Circuits) LNA(Low Noise Amplifiers) at 30GHz hand has been designed and fabricated for the Ka-band Satellite Communications. The $0.15 {\mu}m$ with the width of $80 {\mu}m$ pHEMT technology was used for the fabrication of this MMIC LNA. Using the series feedback technique, ultra low noise and excellent S11 could be obtained at the same time without the cost of gain at 30GHz-band. The stability factors(Ks) for each stage and overall stage are greater than 1 at full frequency bands by the bias circuits and stabilization circuit. The measured performances, which agree well with the predicted performances, show this 2-stage MMIC LNA has the gain of more than 15.7dB and noise figure of less than 2.09dB over 29GHz to 33GHz.