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http://dx.doi.org/10.4218/etrij.11.0210.0466

A D-Band Balanced Subharmonically-Pumped Resistive Mixer Based on 100-nm mHEMT Technology  

Campos-Roca, Y. (Tecnologias de los computadores y las comunicaciones, University of Extremadura)
Tessmann, A. (Department of High Frequency Devices and Circuits, Fraunhofer IAF)
Massler, H. (Department of High Frequency Devices and Circuits, Fraunhofer IAF)
Leuther, A. (Department of High Frequency Devices and Circuits, Fraunhofer IAF)
Publication Information
ETRI Journal / v.33, no.5, 2011 , pp. 818-821 More about this Journal
Abstract
A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.
Keywords
Metamorphic HEMT (mHEMT); monolithic microwave integrated circuit (MMIC); millimeter-wave frequency conversion; resistive mixer; D-band; subharmonically-pumped (SHP) mixer;
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