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http://dx.doi.org/10.4313/JKEM.2008.21.10.885

Simulated DC Characteristics of AlGaN/GaN HEMls with Trench Shaped Source/Drain Structures  

Jung, Kang-Min (고려대학교 전자전기공학과)
Lee, Young-Soo (고려대학교 전자전기공학과)
Kim, Su-Jin (고려대학교 전자전기공학과)
Kim, Dong-Ho (고려대학교 전자전기공학과)
Kim, Jae-Moo (고려대학교 전자전기공학과)
Choi, Hong-Goo (전자부품연구원 나노바이오 의료기기 연구센터)
Hahn, Cheol-Koo (전자부품연구원 나노바이오 의료기기 연구센터)
Kim, Tae-Geun (고려대학교 전자전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.10, 2008 , pp. 885-888 More about this Journal
Abstract
We present simulation results on DC characteristics of AlGaN/GaN HEMTs having trench shaped source/drain Ohmic electrodes. In order to reduce the contact resistance in the source and drain region of the conventional AlGaN/GaN HEMTs and thereby to increase their DC output power, we applied narrow-shaped-trench electrode schemes whose size varies from $0.5{\mu}m$ to $1{\mu}m$ to the standard AlGaN/GaN HEMT structure. As a result, we found that the drain current was increased by 13 % at the same gate bias condition and the transconductance (gm) was improved by 11 % for the proposed AlGaN/GaN HEMT, compared with those of the conventional AlGaN/GaN HEMTs.
Keywords
GaN; HEMT; Contact resistance; Transconductance;
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1 Q. Z. Liu, L. S. Yu, F. Deng, S. S. Lau, Q. Chen, J. W. Yang, and M. A. Khan, "Study of contact formation in AlGaN/GaN heterostructures", Appl. Phys. Lett., Vol. 71, No. 12, p. 1658, 1997   DOI   ScienceOn
2 S. K. Davidsson, M. Gurusinghe, T. G. Andersson, and H. Zirath, "The influence of composition and unintentional doping on the two-dimensional electron gas density in AlGaN/GaN heterostructure", Journal of Electronic Materials, Vol. 33, No. 5, p. 440, 2004   DOI
3 R. Gaska, Q. Chen, J. Yang, A. Osinsky, M. Asif Khan, and M. S. Shur, "High-temperature performance of AlGaN/GaN HEMT's on SiC substrates", IEEE Electron Device Letters, Vol. 18, No. 10, p. 492, 1997   DOI   ScienceOn
4 Cai S. J., Li R., Chen Y. L., Wong L., Wu W. G., Thomas S. G., and Wang K. L., "High performance AlGaN/GaN HEMT with improved ohmic contacts", IEEE Electronics Letters, Vol. 34, No. 23, p. 2354, 1958   DOI   ScienceOn
5 SILVACO International, "Atlas User's Manual", p. 664, 2007
6 E. T. Yu and M. O. Manasreh, "III-V Nitride Semiconductors: Applications & Devices", Taylor&Francs, p. 194, 2003
7 S. Hoshi, H. Okita, Y. Morino, and M. Itoh, "Gallium nitride high electron mobility transistor technology for high gain and highly efficient power amplifiers", Oki Technical Review, Issue 211, Vol. 74, No. 3, 2007
8 A. F. M. Answer and Elias W. Faraclas, "AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics", Solid-State Electronics, Vol. 50, p. 1051, 2006   DOI   ScienceOn
9 Wu Y. F., Saxler A., Moore M., Smith R. P., Sheppard S., Chavarkar P. M., Wisleder T., Mishra U. K., and Parikh P., "30-W/mm GaN HEMTs by field plate optimization", IEEE Electron. Device. Lett., Vol. 25, No. 3, p. 117, 2004   DOI   ScienceOn
10 Zhang N. Q., Keller S., Parish G., Heikman S., Denbaars S. P., and Mishra U. K., "High breakdown GaN HEMT with overlapping gate structure", IEEE Electron. Device. Lett., Vol. 21, No. 9, p. 421, 2000   DOI   ScienceOn
11 V. Palankovski and R. Quay, "Analysis and Simulation of Heterostructure Devices", Springer Wein NewYork, p. 150, 2004
12 U. K. Mishra, P. Parikh, and Y.-F. Wu, "AlGaN/GaN HEMTs - an overview of device operation and applications," in Proceedings of IEEE, Vol. 90, No. 6, p. 1022, 2002   DOI   ScienceOn
13 Y. Hirose, A. Honshio, T. Kawashima, M. Iwaya, and S. Kamiyama, "Influence of ohmic contact resistance on transconductance in AlGaN/GaN HEMT", IEICE Trans. Electron. Lett., Vol. 89, No. 7 p. 1064, 2006