• Title/Summary/Keyword: Low-voltage

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A 65-nm CMOS Low-Power Baseband Circuit with 7-Channel Cutoff Frequency and 40-dB Gain Range for LTE-Advanced SAW-Less RF Transmitters (LTE-Advanced SAW-Less 송신기용 7개 채널 차단 주파수 및 40-dB 이득범위를 제공하는 65-nm CMOS 저전력 기저대역회로 설계에 관한 연구)

  • Kim, Sung-Hwan;Kim, Chang-Wan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.3
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    • pp.678-684
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    • 2013
  • This paper describes a low-power baseband circuit for SAW-less LTE-Advanced transmitters. The proposed transmitter baseband circuit consists of a 2nd-order Tow-Thomas type active RC-LPF and a 1st-order passive RC LPF. It can provide a 7 multi-channel cut-off frequencies and wide gain control range of -41 dB ~ 0 dB with a 1-dB step. The proposed 2nd-order active RC-LPF adopts an op-amp in which three other sub-op amps are in parallel connected to reduce DC current for different cutoff frequency. In addition, each sub-op amp adopts both Miller and feed-forward phase compensation method to achieve an UGBW of more than 1-GHz with a small DC power consumption. The proposed baseband circuit is implemented in 65-nm CMOS technology, consuming DC power from 6.3 mW to 24.1 mW from a 1.2V supply voltage for each different cut-off frequency.

Photo Spacer Induced Bistable Mode Plastic PSFLCDs for High Mechanical Stability

  • Kim, Yu-Jin;Park, Seo-Kyu;Kwon, Soon-Bum;Lee, Ji-Hoon;Son, Ock-Soo;Lim, Tong-Kun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.489-492
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    • 2005
  • We report new polymer stabilized ferroelectric liquid crystal (PSFLC) cells with mechanical stability which is achievable by introducing photospacers in the cells. It was found that the mechanical st ability of the PSFLC cell was effected by introduction of photo spacers. We analyzed the dependence of mechanical stability and memory property on the density of photospacers in the PSFLC cell. The stability and memory properties of PSFLC Cells depending on photospacer density are discussed. 1. Introduction Recently, flexible displays have attracted much attention because they have remarkable advantages: thinner, lighter, non-breakable and conformable features. Flexible displays have various potential applications such as e-book and e-paper displays utilizing the distinct features. E-book and E-paper displays demand very low power consumption, so that bistable memory liquid crystal modes are required in case of flexible plastic LCDs for those application. Three kinds of memory LC modes have been developed; bistable nematic, bistable cholesteric and bistable FLC. Among them SSFLC as one of bistable FLC has big advantages such as low driving voltage, wide view angle and fast response time, SSFLC cells are, however, very weak against mechanical shock. Polymer stabilized FLC (PSFLC) has been developed to overcome the poor mechanical stability of SSFLC. PSFLC was known to have network structure that FLCs are oriented with smectic layer ordering in polymer network. The polymer network stabilizes the FLC orientation, which leads to improvement of mechanical stability of PSFLCD. A lot of studies have been done for the application of PSFLC to flexible $LCDs.^{[1{\sim}12]}$ However, it should be noted that PSFLC does not have sufficient mechanical stability for the particular applications such as smart card LCD, where LCD is highly bendable.Bead spacer was mainly used to maintain cell gap of conventional PSFLCDs. But the spacer density of it is not locally uniform in the cell, so that it is generally difficult that the PSFLCDs with bead spacers show sufficient mechanical stability. In order to more improve the mechanical stability of PSFLCDs, we introduced photospacers into PSFLCDs. In this paper, we describe the improvement of mechanical stability by introducing photospacers into PSFLCDs.

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Synthesis of High Purity Multiwalled and Singlewalled Carbon Nanotubes by Arc-discharge

  • Kim, Keun-Soo;Park, Young-Soo;An, Kay-Hyeok;Jeong, Hee-Jin;Kim, Won-Seok;Choi, Young-Chul;Lee, Seung-Mi;Moon, Jeong-Mi;Chung, Dong-Chul;Bae, Dong-Jae;Lim, Seong-Chu;Lee, Young-Seak;Lee, Young-Hee
    • Carbon letters
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    • v.1 no.2
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    • pp.53-59
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    • 2000
  • The synthetic methods for high yield of multiwalled carbon nanotube (MWNT) and singlewalled carbon nanotube (SWNT) with high purity by arc discharge have been investigated. MWNTs were synthesized under different pressures of helium and the gas mixture of argon and hydrogen. Relatively high pressure of 300-400 torr was required for high yield MWNTs synthesis at low bias voltage of about 20 V and 55 A, whereas low pressure of about 100 torr was required for SWNTs. The introduction of hydrogen gases during the synthesis of MWNTs improved the yield and purity of the samples. The SWNTs were synthesized by the assistance of a small amount of mixture of transition metals, which played as a catalyst during the formation process. The purity and yield of SWNTs were higher at a lower pressure and enhanced by mixing more components of the transition metals.

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a-Si:H/c-Si Heterojunction Solar Cell Performances Using 50 ㎛ Thin Wafer Substrate (50 ㎛ 기판을 이용한 a-Si:H/c-Si 이종접합 태양전지 제조 및 특성 분석)

  • Song, Jun Yong;Choi, Jang Hoon;Jeong, Dae Young;Song, Hee-Eun;Kim, Donghwan;Lee, Jeong Chul
    • Korean Journal of Materials Research
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    • v.23 no.1
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    • pp.35-40
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    • 2013
  • In this study, the influence on the surface passivation properties of crystalline silicon according to silicon wafer thickness, and the correlation with a-Si:H/c-Si heterojunction solar cell performances were investigated. The wafers passivated by p(n)-doped a-Si:H layers show poor passivation properties because of the doping elements, such as boron(B) and phosphorous(P), which result in a low minority carrier lifetime (MCLT). A decrease in open circuit voltage ($V_{oc}$) was observed when the wafer thickness was thinned from $170{\mu}m$ to $50{\mu}m$. On the other hand, wafers incorporating intrinsic (i) a-Si:H as a passivation layer showed high quality passivation of a-Si:H/c-Si. The implied $V_{oc}$ of the ITO/p a-Si:H/i a-Si:H/n c-Si wafer/i a-Si:H/n a-Si:H/ITO stacked layers was 0.715 V for $50{\mu}m$ c-Si substrate, and 0.704 V for $170{\mu}m$ c-Si. The $V_{oc}$ in the heterojunction solar cells increased with decreases in the substrate thickness. The high quality passivation property on the c-Si led to an increasing of $V_{oc}$ in the thinner wafer. Short circuit current decreased as the substrate became thinner because of the low optical absorption for long wavelength light. In this paper, we show that high quality passivation of c-Si plays a role in heterojunction solar cells and is important in the development of thinner wafer technology.

Low Phase Noise VCO using Output Matching Network Based on Harmonic Control Circuit (고조파 조절 회로를 기반으로 한 출력 정합 회로를 이용한 저위상 잡음 전압 제어 발진기)

  • Choi, Jae-Won;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.2
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    • pp.137-144
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    • 2008
  • In this paper, a novel voltage-controlled oscillator(VCO) using the output matching network based on the harmonic control circuit is presented for improving the phase noise property. The phase noise suppression is achieved through the harmonic control circuit having the short impedances for both second-harmonic and third-harmonic components, which has been connected at the output matching network. Also, we have used the microstrip square open loop multiple split-ring resonator(OLMSRR) having the high-Q property to further reduce the phase noise of VCO. Because the output matching network based on the harmonic control circuit has been used for reducing the phase noise property instead of the High-Q resonator, we can obtain the broad tuning range by the low-Q resonator. The phase noise of the proposed VCO using the output matching network based on the harmonic control circuit and the microstrip square OLMSRR has been $-127.5{\sim}126.33$ dBc/Hz @ 100 kHz in the tuning range, $5.744{\sim}5.839$ GHz. Compared with the reference VCO using the output matching network without the harmonic control circuit and the microstrip line resonator, the phase noise property of the proposed VCO has been improved in 26.66 dB.

A Re-configurable 0.8V 10b 60MS/s 19.2mW 0.13um CMOS ADC Operating down to 0.5V (0.5V까지 재구성 가능한 0.8V 10비트 60MS/s 19.2mW 0.13um CMOS A/D 변환기)

  • Lee, Se-Won;Yoo, Si-Wook;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.3
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    • pp.60-68
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    • 2008
  • This work describes a re-configurable 10MS/s to 100MS/s, low-power 10b two-step pipeline ADC operating at a power supply from 0.5V to 1.2V. MOS transistors with a low-threshold voltage are employed partially in the input sampling switches and differential pair of the SHA and MDAC for a proper signal swing margin at a 0.5V supply. The integrated adjustable current reference optimizes the static and dynamic performance of amplifiers at 10b accuracy with a wide range of supply voltages. A signal-isolated layout improves the capacitor mismatch of the MDAC while a switched-bias power-reduction technique reduces the power dissipation of comparators in the flash ADCs. The prototype ADC in a 0.13um CMOS process demonstrates the measured DNL and INL within 0.35LSB and 0.49LSB. The ADC with an active die area of $0.98mm^2$ shows a maximum SNDR and SFDR of 56.0dB and 69.6dB, respectively, and a power consumption of 19.2mW at a nominal condition of 0.8V and 60MS/s.

Preparation and Properties of Organic Electroluminescent Devices (유기 전계발광소자의 제작과 특성 연구)

  • 노준서;장호정
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.1
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    • pp.9-13
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    • 2002
  • Recently, Organic electroluminescent devices (OELDs) have been demonstrated the medium sized full color display with effective multi-layer thin films. In this study, the multi-layer OELDs were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The low molecule compounds such as $Alq_3$(trim-(8-hydroxyquinoline)aluminum) and CTM (carrier transfer material) as the electron transport and injection layers as well as TPD (triphenyl-diamine) and CuPc (copper phthalocyanine) as the hole transport and injection layers were used. The luminance was rapidly increased above the threshold voltage of 10 V. The luminance and emission spectrum for the OELDs samples with $A1/CTM/Alq_3$/TPD/1TO structures were found to be 430 cd/$m^2$and 512 nm at 17 V showing green color emission. In contrast, the samples with $Li-A1/Alq_3$/TPD/CuPC/1TO multi-structures showed 508 nm in emission spectrum and 650 cd/$m^2$at 17 V in the luminance. The increment of luminance may be ascribed to the improved efficiency of recombination in the region of the emission layers by the deposition of CuPc as hole injection layer and the low work function of the Li-Al electrode compared to the Al electrode.

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A Study on Micro-Electrode Pattern of Repair Process Using Electrohydrodynamic Printing System (전기수력학 프린팅 기술을 이용한 미세전극 패턴의 리페어 공정 적용에 관한 연구)

  • Yang, Young-Jin;Kim, Soo-Wan;Kim, Hyun-Bum;Yang, Hyung-Chan;Lim, Jong-Hwan;Choi, Kyung-Hyun
    • Clean Technology
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    • v.22 no.4
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    • pp.232-240
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    • 2016
  • Recently, various research studies have been conducted and many are in progress for the suitable alternative materials for ITO based touch screen panel (TSP) due to limitations in size and flexibility. Various researches from all over the world have been attempted to fabricate the fine electrode less than $5{\mu}m$ for the rapid developing of display technology. Research is also being carried out in metal mesh methods using the existing technologies and alternative materials at commercial level. However, by using the existing technologies certain discrepancies are observed like low transparency and low yield which also results in the distortion of patterns. For repairing the damaged pattern, the conventional laser CVD technique has also been used but there are some challenges observed in CVD technique like achieving a stable fine electrode of $10{\mu}m$ or less and avoiding the formation of satellite drops. To overcome these issues, a new printing process named Electrohydrodynamic (EHD) printing, has been introduced by which $5{\mu}m$ fine patterns can be printed in one step. This EHDA printing technique has been applied to print very fine electrodes of $5{\mu}m$ or less by using conductive inks of various viscosities. This study also presents the optimized process parameters for printing $5{\mu}m$ fine electrode patterns during experiments by controlling the applied voltage and supply flow rate. The $5{\mu}m$ repair electrodes were fabricated for repairing $50{\mu}m$ shorted electrode samples.

Electrical Characteristics of RRAM with HfO2 Annealing Temperatures and Thickness (HfO2 열처리 온도 및 두께에 따른 RRAM의 전기적 특성)

  • Choi, Jin-Hyung;Yu, Chong Gun;Park, Jong-Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.3
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    • pp.663-669
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    • 2014
  • The electrical characteristics of RRAM with different annealing temperature and thickness have been measured and discussed. The devices with Pt/Ti top electrode of 150nm, Pt bottom electrode of 150nm, $HfO_2$ oxide thickness of 45nm and 70nm have been fabricated. The fabricated device were classified by 3 different kinds according to the annealing temperature, such as non-annealed, annealed at $500^{\circ}C$ and annealed at $850^{\circ}C$. The set and reset voltages and the variation of resistance with temperatures have been measured as electrical properties. From the measurement, it was found that the set voltages were decreased and the reset voltage were increased slightly, and thus the sensing window was decreased with increasing of measurement temperatures. It was remarkable that the device annealed at $850^{\circ}C$ showed the best performances. Although the device with thickness of 45nm showed better performances in the point of the sensing window, the resistance of 45nm devices was large relatively in the low resistive state. It can be expected to enhance the device performances with ultra thin RRAM if the defect generation could be reduced at the $HfO_2$ deposition process.

Short Term Outcomes and Prognostic Factors Based on Radiofrequency Thermocoagulation on Lumbar Medial Branches (요추 후지내측지에 대한 고주파열응고술의 단기 성적과 예후 인자)

  • Choi, Byung In;Kweon, Tae Dong;Park, Kyung Bae;Lee, Youn-Woo
    • The Korean Journal of Pain
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    • v.20 no.2
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    • pp.116-122
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    • 2007
  • Background: Lumbar zygapophysial joints are a common source of chronic lower back pain and radiofrequency thermocoagulation (RF) of the medial branches (MB) has been shown to be effective at providing substantial pain relief for chronic low back pain. Therefore, we carried out this study to determine the short term outcomes and prognostic factors of RF on the MB of patients with lumbar facet syndrome. Methods: We performed RF in fourteen patients who showed greater than 80% pain relief up to three times after a diagnostic MB block was conducted using 0.3 ml of 0.5% bupivacaine. Using 10 cm curved electrodes with 10-mm active tip, a 60 second, $80^{\circ}C$ lesion was made after electrical stimulation at 50 Hz for sensory and 2 Hz for motor nerve testing. The degree of pain relief was then assessed after 2 weeks, and again after 3 months using a visual analog scale (VAS) and a four point Likert scale. The outcome was regarded as 'success' if at least a 50% reduction in the VAS was observed. Possible prognostic factors between the two groups were also evaluated Results: The success rate was 71.4% (10/14) after three months of follow-up. However, there were transient complications, such as neuritis like syndrome, in 4 patients. In addition, short symptom duration and low minimal voltage (< 0.4 V) for sensory stimulation were shown to be the relevant prognostic factors for a successful outcome. Conclusions: RF may be an alternative to repeated MB block or intraarticular injection for palliation of lumbar facet syndrome. For better outcomes, early diagnosis and strict patient selection should be coupled with efforts to avoid anatomically incorrect RF.