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http://dx.doi.org/10.6109/jkiice.2014.18.3.663

Electrical Characteristics of RRAM with HfO2 Annealing Temperatures and Thickness  

Choi, Jin-Hyung (Department of Electronics Engineering, Incheon National University)
Yu, Chong Gun (Department of Electronics Engineering, Incheon National University)
Park, Jong-Tae (Department of Electronics Engineering, Incheon National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.18, no.3, 2014 , pp. 663-669 More about this Journal
Abstract
The electrical characteristics of RRAM with different annealing temperature and thickness have been measured and discussed. The devices with Pt/Ti top electrode of 150nm, Pt bottom electrode of 150nm, $HfO_2$ oxide thickness of 45nm and 70nm have been fabricated. The fabricated device were classified by 3 different kinds according to the annealing temperature, such as non-annealed, annealed at $500^{\circ}C$ and annealed at $850^{\circ}C$. The set and reset voltages and the variation of resistance with temperatures have been measured as electrical properties. From the measurement, it was found that the set voltages were decreased and the reset voltage were increased slightly, and thus the sensing window was decreased with increasing of measurement temperatures. It was remarkable that the device annealed at $850^{\circ}C$ showed the best performances. Although the device with thickness of 45nm showed better performances in the point of the sensing window, the resistance of 45nm devices was large relatively in the low resistive state. It can be expected to enhance the device performances with ultra thin RRAM if the defect generation could be reduced at the $HfO_2$ deposition process.
Keywords
Resistive Random Access Memory; annealing temperature; $HfO_2$ oxide thickness;
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