• Title/Summary/Keyword: Low-side current

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Fabrication and Characteristics of Supported Type Planar Solid Oxide Fuel Cell By Co-firing Process (공소결법에 의해 제조된 지지체식 평판형 고체산화물 연료전지 성능 특성)

  • Song, Rak-Hyun
    • Korean Journal of Materials Research
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    • v.13 no.3
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    • pp.160-168
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    • 2003
  • The co-firing processes for the supported type planar solid oxide fuel cell were investigated. A flat cell of $7.7${\times}$10.8\textrm{cm}^2$ was fabricated successfully by the co-firing process, in which green films were co-sintered in the forms of two layers of anode/electrolyte or of three layers of anode/electrolyte/cathode with gas distributor. A co-fired cell of two layers yielded a power of 200 ㎽/$\textrm{cm}^2$ at 608 ㎷. Its performance loss was mainly due to iR drop in the anodic gas distributor, which was attributed to poor contact between anodic gas distributor and current collector. The performance in the co-fired cell of three layers was much lower than that of two layers, which resulted from the large iR drop and activation overvoltage at the cathodic side. In the co-fired cell of two layers, the impedance analysis indicated that the performance decay during cell operation is due to both anode overvoltage and iR drop at anode side. Also the electrode reaction of the co-fired two layers' cell is considered to be controlled by activation overvoltage within the low current of 50 ㎃.

Electromigration and Thermomigration in Flip-Chip Joints in a High Wiring Density Semiconductor Package

  • Yamanaka, Kimihiro
    • Journal of the Microelectronics and Packaging Society
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    • v.18 no.3
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    • pp.67-74
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    • 2011
  • Keys to high wiring density semiconductor packages include flip-chip bonding and build-up substrate technologies. The current issues are the establishment of a fine pitch flip-chip bonding technology and a low coefficient of thermal expansion (CTE) substrate technology. In particular, electromigration and thermomigration in fine pitch flipchip joints have been recognized as a major reliability issue. In this paper, electromigration and thermomigration in Cu/Sn-3Ag-0.5Cu (SAC305)/Cu flip-chip joints and electromigration in Cu/In/Cu flip chip joints are investigated. In the electromigration test, a large electromigration void nucleation at the cathode, large growth of intermetallic compounds (IMCs) at the anode, a unique solder bump deformation towards the cathode, and the significantly prolonged electromigration lifetime with the underfill were observed in both types of joints. In addition, the effects of crystallographic orientation of Sn on electromigration were observed in the Cu/SAC305/Cu joints. In the thermomigration test, Cu dissolution was accelerated on the hot side, and formation of IMCs was enhanced on the cold side at a thermal gradient of about $60^{\circ}C$/cm, which was lower than previously reported. The rate of Cu atom migration was found comparable to that of electromigration under current conditions.

Temperature Control of the Aluminum Plate using Peltier Element (펠티어 소자를 이용한 알루미늄 판의 온도 제어)

  • 전원석;방두열;최광훈;권대규;김남균;이성철
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2004.10a
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    • pp.764-767
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    • 2004
  • This paper present the temperature control of aluminum plate using Peltier element. Peltier effect is heat pumping phenomena by electric energy as one of the thermoelectric effect. So if current is asserted to Peltier element, it absorbs heat from low temperature side and emits to high temperature side. In this experiment, Peltier element is used to control the temperature of small aluminum plate with ON/OFF control scheme and fan ON/OFF. As the result of experiments, it is proper to act fan only while cooling duration and there exist a proper cooling current to drop temperature rapidly. It takes about 100sec to increase to 7$0^{\circ}C$ and drop to 35$^{\circ}C$ of aluminium plate temperature and about 90sec to increase to 7$0^{\circ}C$ and drop to 4$0^{\circ}C$ in ambient temperature 3$0^{\circ}C$ while fan is on only in cooling duration. Future aim is to realize more rapid temperature control and develop SMHA(special metal hydride actuator) by using Peltier element to heating and cooling.

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Simplified 2-D Analytical Model for Winding Loss Analysis of Flyback Transformers

  • Zhang, Junming;Yuan, Wei;Zeng, Hulong;Qian, Zhaoming
    • Journal of Power Electronics
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    • v.12 no.6
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    • pp.960-973
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    • 2012
  • The winding loss analysis of a flyback transformer is difficult and ambiguous because the primary side current and the secondary side current differs both in shape and phase, especially for DCM (Discontinuous Conduction Mode) operation. Meanwhile, the fringing field caused by the air gaps further makes the traditional 1-D loss analysis model not directly applicable. The paper gives a thorough investigation into the phase shift of winding currents, which indicates that the phase shift of the high order harmonics is still close to $180^{\circ}$ out-of-phase. Based on the analysis, a simplified 2-D winding loss analytical model for flyback transformers considering the effects of low order harmonics is proposed. By neglecting the y components of the fringing field, the proposed model has an acceptable accuracy and a simple form that is similar to the conventional 1-D model. The power loss calculated with the proposed analysis model is verified by FEA (Finite Element Analysis) simulations and experimental results.

Beyond-CMOS: Impact of Side-Recess Spacing on the Logic Performance of 50 nm $In_{0.7}Ga_{0.3}As$ HEMTs

  • Kim, Dae-Hyun;del Alamo, Jesus A.;Lee, Jae-Hak;Seo, Kwang-Seok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.3
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    • pp.146-153
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    • 2006
  • We have been investigating InGaAs HEMTs as a future high-speed and low-power logic technology for beyond CMOS applications. In this work, we have experimentally studied the role of the side-recess spacing $(L_{side})$ on the logic performance of 50 nm $In_{0.7}Ga_{0.3}As$ As HEMTs. We have found that $L_{side}$ has a large influence on the electrostatic integrity (or short channel effects), gate leakage current, gate-drain capacitance, and source and drain resistance of the device. For our device design, an optimum value of $L_{side}$ of 150 nm is found. 50 nm $In_{0.7}Ga_{0.3}As$ HEMTs with this value of $L_{side}$ exhibit $I_{ON}/I_{OFF}$ ratios in excess of $10^4$, subthreshold slopes smaller than 90 mV/dec, and logic gate delays of about 1.3 ps at a $V_{CC}$ of 0.5 V. In spite of the fact that these devices are not optimized for logic, these values are comparable to state-of-the-art MOSFETs with similar gate lengths. Our work confirms that in the landscape of alternatives for beyond CMOS technologies, InAs-rich InGaAs FETs hold considerable promise.

DC Link Voltage Control for Single-Phase GTO PWM Converter (단상 GTO PWM 컨버터의 직류링크 전압제어)

  • Lee, O-Jae;Lee, Dong-Choon;Sul, Seung-Ki
    • Proceedings of the KIEE Conference
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    • 1993.11a
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    • pp.117-120
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    • 1993
  • In this paper, a novel DC link voltage control scheme for a single-phase PWM converter is proposed. The main idea of the control scheme is eliminating the effect of dc link voltage harmonics by using power balance of input side and output side. With the proposed strategy, faster transient response than that of conventional method using low-pass filter can be obtained. In addition, a half period current control, based at equal switching frequency, is proposed. The validity of the proposed scheme is verified by simulation results for GTO PWM converter system.

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A Numerical Study on Efficiency and Convergence for Various Implicit Approximate Factorization Algorithms in Compressible Flow Field. (다양한 근사인수분해 알고리즘을 이용하여 압축성 유동장의 수렴성 및 유용성에 대한 연구)

  • Gwon Chang-O;Song Dong-Ju
    • 한국전산유체공학회:학술대회논문집
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    • 1999.11a
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    • pp.17-22
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    • 1999
  • Convergence characteristics and efficiency of three implicit approximate factorization schemes(ADI, DDADI and MAF) are examined using 2-Dimensional compressible upwind Navier-Stokes code. Second-order CSCM(Conservative Supra Characteristic Method) upwind flux difference splitting method with Fromm scheme is used for the right-hand side residual evaluation, while generally first-order upwind differencing is used for the implicit operator on the left-hand side. Convergence studies are performed using an example of the flow past a NACA0012 airfoil at steady transonic flow condition, i. e. Mach number 0.8 at $1.25^{\circ}$ angle of attack. The results were compared with other computational results in order to validate the current numerical analysis. The results from the implicit AF algorithms were compared well in low surface with the other computational results; however, not well in upper surface. It might be due to lack of the grid around the shock position. Because the algorithm minimizes the errors of the approximate decomposition, the improved convergence rate with MAF were observed.

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Improved LVRT Capability and Power Smoothening of DFIG Wind Turbine Systems

  • Nguyen, Thanh Hai;Lee, Dong-Choon
    • Journal of Power Electronics
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    • v.11 no.4
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    • pp.568-575
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    • 2011
  • This paper proposes an application of energy storage devices (ESD) for low-voltage ride-through (LVRT) capability enhancement and power smoothening of doubly-fed induction generator (DFIG) wind turbine systems. A grid-side converter (GSC) is used to maintain the DC-link voltage. Meanwhile, a machine-side converter (MSC) is used to control the active and reactive powers independently. For grid disturbances, the generator output power can be reduced by increasing the generator speed, resulting in an increased inertial energy of the rotational body. Design and control techniques for the energy storage devices are introduced, which consist of current and power control loops. Also, the output power fluctuation of the generator due to wind speed variations can be smoothened by controlling the ESD. The validity of the proposed method has been verified by PSCAD/EMTDC simulation results for a 2 MW DFIG wind turbine system and by experimental results for a small-scale wind turbine simulator.

Low-Complexity MPEG-4 Shape Encoding towards Realtime Object-Based Applications

  • Jang, Euee-Seon
    • ETRI Journal
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    • v.26 no.2
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    • pp.122-135
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    • 2004
  • Although frame-based MPEG-4 video services have been successfully deployed since 2000, MPEG-4 video coding is now facing great competition in becoming a dominant player in the market. Object-based coding is one of the key functionalities of MPEG-4 video coding. Real-time object-based video encoding is also important for multimedia broadcasting for the near future. Object-based video services using MPEG-4 have not yet made a successful debut due to several reasons. One of the critical problems is the coding complexity of object-based video coding over frame-based video coding. Since a video object is described with an arbitrary shape, the bitstream contains not only motion and texture data but also shape data. This has introduced additional complexity to the decoder side as well as to the encoder side. In this paper, we have analyzed the current MPEG-4 video encoding tools and proposed efficient coding technologies that reduce the complexity of the encoder. Using the proposed coding schemes, we have obtained a 56 percent reduction in shape-coding complexity over the MPEG-4 video reference software (Microsoft version, 2000 edition).

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Generation of Low Temperature Plasma and Its Application (저온 플라즈마 발생과 응용)

  • Lee, Bong-Ju
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.9
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    • pp.413-416
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    • 2002
  • It was reported that low temperature plasma developed by our group was apparently homogeneous and stable at atmospheric pressure, and was generated if the alumina was used as a dielectric insulating material and Ar gas as a plasma gas. This is a structure in which the dielectric materials are covered and arranged in parallel in the one side of electrode. In this experiment, we discovered that dielectric material was important to generate normal electric discharge. To examine the effect of dielectric material on the electric discharge characteristic, the voltage and current of the plasma was measured and the electrical effect of dielectric material was examined. Also, it was applied to an etching of tin oxide films.