• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.314-314
• /
• 2008

The low temperature sintering and the dielectric properties of $Al_2O_3/SiO_2$-zinc borosilicate glass composites were investigated in the view of the application for LTCC. When the sintering was conducted at $900^{\circ}C$ $ZnAl_2O_4$ and $ZnB_2O_4$ compounds formed at the $Al_2O_3$-rich and the $SiO_2$-rich compositions, respectively. The reaction between ZBS glass and $Al_2O_3/SiO_2$ caused the formation of these compounds. The $Al_2O_3/SiO_2$ ratio affected the dielectric properties. The excellent dielectric properties, i.e., Q$\times$f value= 40,000 GHz and ${\varepsilon}_r$=4.5, were obtained in the $Al_2O_3/SiO_2$-ZBS glass system and fabricated the LTCC substrate materials.

• Transactions on Electrical and Electronic Materials
• /
• v.2 no.2
• /
• pp.32-36
• /
• 2001

A new solid source for low temperature diffusion into silicon was developed. The source wafer consists of an “active” compound, which is sol-gel prepared phosphosilicate glass-ceramics containing 56% P$_2$O$\sub$5/, embedded in a skeletal foam-like, inert substrate. Phosphorus diffusion from the new solid sources at low temperatures (800-875$^{\circ}C$) produced reprodecible sheet resistances and shallow junctions. From a series of one hour doping runs, the life time of the phosphosilicate source was determined to be over 40 hours. The effective diffusion coefficient of phosphorus into silicon and the corresponding activation energy at 850$^{\circ}C$ were determined to be 7.5${\times}$10$\^$-15/ $\textrm{cm}^2$/sec and ∼3.9 eV, respectively.

• Korean Journal of Metals and Materials
• /
• v.48 no.7
• /
• pp.660-666
• /
• 2010

30 nm thick Ni layers were deposited on a glass substrate by e-beam evaporation. Subsequently, 30 nm or 60 nm ${\alpha}-Si:H$ layers were grown at low temperatures ($<220^{\circ}C$) on the 30 nm Ni/Glass substrate by catalytic CVD (chemical vapor deposition). The sheet resistance, phase, microstructure, depth profile and surface roughness of the $\alpha-Si:H$ layers were examined using a four-point probe, HRXRD (high resolution Xray diffraction), Raman Spectroscopy, FE-SEM (field emission-scanning electron microscopy), TEM (transmission electron microscope) and AES depth profiler. The Ni layers reacted with Si to form NiSi layers with a low sheet resistance of $10{\Omega}/{\Box}$. The crystallinty of the $\alpha-Si:H$ layers on NiSi was up to 60% according to Raman spectroscopy. These results show that both nano-scale NiSi layers and crystalline Si layers can be formed simultaneously on a Ni deposited glass substrate using the proposed low temperature catalytic CVD process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.511-511
• /
• 2007

Low-emissivity (low-e) coatings with visible transparency have attracted increased interest m reducing heat radiation loss through window panes from ecological and sustainable aspects. $TiO_2$-silver transparent thin films for low-e have good properties for UV and IR blocking as well as photocatalyst compared to that with commercial UV blocking films such as fluorine doped oxide (FTO), antimony doped tin oxide (ATO), etc. In this study, transparent $TiO_2$-silver thin films were prepared by successive ink-jet printing of commercial nano silver and $TiO_2$ sol. The $TiO_2$ sol, as ink for ink-jet printing, were synthesized by hydrothermal process in the autoclave externally pressurized with $N_2$ gas of 200 bar at $120^{\circ}C$ for 10 hrs. The synthesized $TiO_2$ sols were all formed with brookite phase and their particle size was several to 30 nm. At first nano sized silver sol was coated on glass substrate, after that $TiO_2$ sol was coated by ink-jet printing. With increasing coating thickness of $TiO_2$-silver multilayer by repeated ink-jet coating, the absorbance of UV region (under 400nm) and IR region (over 700nm) also increase reasonably, compared to that with commercial UV blocking films.

• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1514-1516
• /
• 1999

This paper covers our efforts to improve the low carrier mobility and light instability of hydrogenated amorphous silicon (a-Si:H) films with microcrystalline silicon $({\mu}c-Si)$ films. We successfully prepared ${\mu}c-Si$ films on $CaF_2$/glass substrate by decomposition of $SiH_4$ in RPCVD system. The $CaF_2$ films on glass served as a seed layer for ${\mu}c-Si$ film growth. The XRD analysis on $CaF_2$/glass illustrated a (111) preferred $CaF_2$ grains with the lattice mismatch less than 5 % of Si. We achieved ${\mu}c-Si$ films with a crystalline volume fraction of 61 %, (111) and (220) crystal orientations. grain size of $706\AA$, activation energy of 0.49 eV, and Photo/dark conductivity ratio of 124. By using a $CaF_2$/glass structure. we were able to achieve an improved ${\mu}c-Si$ films at a low substrate temperature of $300^{\circ}C$.

• 한국태양에너지학회:학술대회논문집
• /
• 2009.04a
• /
• pp.61-65
• /
• 2009

Window integrated solar collector is to simply install inside of the existing double glass window frame. Double glass window frame is consist of inner glass of Low-E coating and Silver coating, and outer glass of low iron reinforced glass. In order to secure natural lighting in a room, only 50% of window frame is covered with solar collectors. Solar absorption or transmission rate varies seasonally depending on sun angles. Part of inner glass where right behind of the solar plate is covered with silver coating to increase absorption rate of solar plate. The collector is made of a copper serpentine where aluminum fins are soldering. To improve the effect of insulation of inside of the window frame is recommend vacuum. As a result, we are making the 3th sample and will archieve below $F_RU_L=7.5W/m^2^{\circ}C$ that is the account of heat lossed, and above $F_R({\tau}{\alpha})=0.45$.

• Proceedings of the KIEE Conference
• /
• 2011.07a
• /
• pp.1300-1301
• /
• 2011

The purpose of this study is to analyze the electrical performance characteristics of semi-transparent BIPV modules. This study dealt with four different types of semi-transparent PV modules depending on the backside glass material, such as clear glass, bronze glass, reflecting glass and low-e glass. The monitoring data shows that the PV module temperature and solar radiation were closely related to the electrical performance of the modules.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.7
• /
• pp.510-514
• /
• 2013

In order to prevent heat loss that occurs through the glass, low-emissivity (Low-E) coating methods with good insulating properties and high transmittance were used. InGaZnO/Ag/InGaZnO (IGZO/Ag/IGZO) multilayer thin films have been deposited on XG glass substrate by RF magnetron sputtering. Depending on the different thickness of Ag in multilayer films, the structural and optical properties of Low-E multilayer films were analyzed. By XRD analysis results, the multilayer thin films were observed to be amorphous structure regardless of Ag thickness. According to the AFM results, surface morphology of the multilayer films was observed and compared. Using UV-VIS spectroscopy, low emissivity property has been observed clearly with the transmittance of higher than 85% at visible range and lower than 30% at IR range.

• Journal of the Korean Society for Precision Engineering
• /
• v.27 no.12
• /
• pp.28-32
• /
• 2010

Technical demands for aspheric glass lens formed in market increases its application from simple camera lens module to fiber optics connection module in optical engineering. WC is often used as a metal core of the aspheric glass lens, but the long life time is issued because it fabricated in high temperature and high pressure environment. High hard thin film coating of lens core increases the core life time critically. Diamond Like Carbon(DLC) thin film coating shows very high hardness and low surface roughness, i.e. low friction between a glass lens and a metal core, and thus draw interests from an optical manufacturing industry. In addition, DLC thin film coating can removed by etching process and deposit the film again, which makes the core renewable. In this study, DLC films were deposited on the SiC ceramic core. The process variable in FVA(Filtered Vacuum Arc) method was the substrate bias-voltage. Deposited thin film was evaluated by raman spectroscopy, AFM and nano indenter and measured its crystal structure, surface roughness, and hardness. After applying optimum thin film condition, the life time and crystal structure transition of DLC thin film was monitored.

• Nuclear Engineering and Technology
• /
• v.54 no.8
• /
• pp.3051-3058
• /
• 2022

In the present work, untreated Iraqi sand with grain sizes varied between 100 and 200 ㎛ was used to produce a colored glass sample that has shielding features against the low gamma-ray energy. Therefore, a weight of 70-60 wt % sand was mixed with 9-14 wt% B₂O₃, 8-10 wt% Na₂O, 4-6 wt% of CaO, 3-6 wt% Al₂O₃, in addition to 0.3% of Co₂O₃. After melting and annealing the glass sample, the X-ray diffraction spectrometry was applied to affirm the amorphous phase of the fabricated glass samples. Moreover, the X-ray dispersive energy spectrometry was used to measure the chemical composition, and the MH-300A densimeter was applied to measure the fabricated sample's density. The Makishima-Makinzie model was applied to predict the mechanical properties of the fabricated glass. Besides, the Monte Carlo simulation was used to estimate the fabricated glass sample's radiation shielding capacity in the low-energy region between 22.1 and 160.6 keV. Therefore, the simulated linear attenuation coefficient changed between 10.725 and 0.484 cm^-1, raising the gamma-ray energy between 22.1 and 160.6 keV. Also, other shielding parameters such as a half-value layer, pure lead equivalent thickness, and buildup factors were calculated.