• 대한금속재료학회지
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• 제50권1호
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• pp.23-27
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• 2012

The color of a natural diamond that contains nitrogen impurities can be enhanced by a high pressure high temperature (HPHT) treatment. Type IaAB diamond samples containing nitrogen impurities were executed by HPHT process of 5.6 Gpa, 10 min by varying the annealing temperature at 1600, 1650, and $1700^{\circ}C$. Property characterization was carried out using an optical microscope, FT-IR spectrometer, low-temperature PL spectrometer, and micro Raman spectrometer. By observing optical micrographs, it can be seen that diamond sample began to alter its color to vivid yellow at $1700^{\circ}C$. In the FT-IR spectrum, there were no Type changes of the diamond samples. However, amber centers leading to brown colors lessened after $1700^{\circ}C$ annealing. In the PL spectrum, all the H4 centers became extinct, while there were no changes of yellow color center H3 before or after treatment. In the Raman spectrum, no graphite spots were detected. Consequently, diamond color enhancement can be done by higher than $1700^{\circ}C$ HPHT annealing at 5.6 GPa-10 min.

• 열처리공학회지
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• 제34권2호
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• pp.53-59
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• 2021

Due to high specific strength and low density, AZ series magnesium alloys have been receiving high interest as a lightweight material. However, their industrial application is limited due to the phenomenon that the strength decreases at elevated temperature by the occurrence of softening effect because of the Mg17Al12 phase decomposition. To solve this problem, many research were conducted to increase the high-temperature strength by forming a thermal stable second-phase component by adding new elements to the AZ magnesium. Especially, adding Ca to AZ magnesium has been reported that Ca forms the new second-phase. However, studies about the analysis of decomposition or precipitation temperature, formation composition, and components to understand the formation behavior of these precipitated phases are still insufficient. Therefore, the effect of Ca addition to AZ61 on the phase change and microstructure of the alloy during annealing was investigated. As a result of analysis of the initial and heat-treated specimen, AZ61 formed α-Mg matrix and precipitated phase of Mg17Al12, and AZX611 formed one more type of precipitated phase, Al2Ca. Also, Al2Ca was thermal stable at high temperatures. And after annealing, the laves phase was decomposed to under 10 ㎛ size and distributed in matrix.

• 한국진공학회지
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• 제21권3호
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• pp.136-141
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• 2012

열처리 공정으로 제조한 $In_2Se_3$ 박막의 구조 및 광학적 물성을 조사하여 보고한다. 기판위에 스퍼터링 방법으로 인듐(In: indium)을 증착하고 셀레늄 분위기에서 열처리 온도를 변화시키며 In-Se 박막을 제조하였다. 열처리 온도가 증가함에 따라 $In_2Se_3$ 박막의 형성과 상의 변화를 관찰 할 수 있었다. 낮은 열처리 온도(${\leq}150^{\circ}C$)에서는 In의 뭉침 현상을 관찰할 수 있었고 열처리 온도가 $250^{\circ}C$ 부터 $In_2Se_3$ 박막이 형성되며 $350^{\circ}C$ 에서 ${\gamma}-In_2Se_3$ 상이 형성됨을 알 수 있었다. 열처리 온도가 $400^{\circ}C$로 증가면 wurtzite 구조의 고품질 ${\gamma}-In_2Se_3$ 박막을 얻을 수 있었다. 열처리 온도가 증가함에 따라 $In_2Se_3$ 박막의 밴드갭이 증가함을 알 수 있었고, 열처리 온도 $400^{\circ}C$에서 제조된 ${\gamma}-In_2Se_3$ 결정질 박막의 밴드갭이 1.796eV임을 알았다.

• 한국재료학회지
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• 제30권11호
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• pp.615-620
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• 2020

Oxide semiconductor, represented by a-IGZO, has been commercialized in the market as active layer of TFTs of display backplanes due to its various advantages over a-Si. a-IGZO can be deposited at room temperature by RF magnetron sputtering process; however, additional thermal annealing above 300℃ is required to obtain good semiconducting properties and stability. These temperature are too high for common flexible substrates like PET, PEN, and PI. In this work, effects of microwave annealing time on IGZO thin film and associated thin-film transistors are demonstrated. As the microwave annealing time increases, the electrical properties of a-IGZO TFT improve to a degree similar to that during thermal annealing. Optimal microwave annealed IGZO TFT exhibits mobility, SS, V_th, and V_H of 6.45 ㎠/Vs, 0.17 V/dec, 1.53 V, and 0.47 V, respectively. PBS and NBS stability tests confirm that microwave annealing can effectively improve the interface between the dielectric and the active layer.

• 한국표면공학회지
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• 제47권2호
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• pp.81-85
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• 2014

Ga doped ZnO (GZO)/Al bi-layered films were deposited on the glass substrate by RF and DC magnetron sputtering and then vacuum annealed at different temperatures of 100, 200 and $300^{\circ}C$ for 30 minutes to consider the effects of annealing temperature on the structural, electrical and optical properties of the films. For all depositions, the thicknesses of the GZO and Al films were kept constant at 95 and 5 nm, respectively, by controlling the deposition time. As-deposited GZO/Al bi-layered films showed a relatively low optical transmittance of 62%, while the films annealed at $300^{\circ}C$ showed a higher transmittance of 81%, compared to the other films. In addition, the electrical resistivity of the films was influenced by annealing temperature and the lowest resistivity of $9.8{\times}10^{-4}{\Omega}cm$ was observed in the films annealed at $300^{\circ}C$. Due to the increased carrier mobility, 2.35 $cm^2V^{-1}S^{-1}$ of the films. From the experimental results, it can be concluded that increasing the annealing temperature enhanced the optical and electrical properties of the GZO/Al films.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.297-302
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• 2011

Recently, low temperature co-fired ceramic (LTCC) technology is widely used in sensors, actuators and microsystems fields because of its very good electrical and mechanical properties, high reliability and stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of sputtering gas ratio and annealing temperature on the crystal structure of $Pb(ZrTi)O_3$ (PZT) thin films deposited on LTCC substrate. The LTCC substrate with thickness of $400\;{\mu}m$ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. The PZT thin films were deposited on Pt / Ti / LTCC substrates by RF magnetron sputtering method. The results showed that the crystallization of the films were enhanced as increasing $O_2$ mixing ratio. At about 25% $O_2$ mixing ratio, was well crystallized in the perovskite structure. PZT thin films was annealed at various temperatures. When the annealing temperature is lower, the PZT thin films become a phyrochlore phase. However, when the annealing temperature is higher than $600^{\circ}C$, the PZT thin films become a perovskite phase. At the annealing temperature of $700^{\circ}C$, perovskite PZT thin films with good quality structure was obtained.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.136-139
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• 1999

The post-annealing treatments on RF (Radio Frequency) magnetron sputtered PZI(Pb$\_$1.05/(Zr$\_$0.52/, Ti$\_$0.48/)O$_3$thin films(4000${\AA}$) have been investigated. for a structure of PZT/Pt/Ti/SiO$_2$/Si Crystallization pproperties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature. We were able to obtain a perovskite structure of PZT at a low temperature of 600$^{\circ}C$. P-E curves of Pd/PZT/Pt capacitor annealed at 700$^{\circ}C$ demonstrate typical hysteresis loops. The measured values of P$\_$r/, E$\_$c/, by post annealed at 700$^{\circ}C$ were 12.1 ${\mu}$C/$\textrm{cm}^2$, 120KV/cm respectively.

• Transactions on Electrical and Electronic Materials
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• 제16권4호
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• pp.187-189
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• 2015

A charge-trap flash (CTF) thin film transistor (TFT) memory is proposed at a low-temperature process (≤ 450℃). The memory cell consists of a sputtered oxide-nitride-oxide (ONO) gate dielectric and Schottky barrier (SB) source/drain (S/D) junctions using nickel silicide. These components enable the ultra-low-temperature process to be successfully achieved with the ONO gate stacks that have a substrate temperature of room temperature and S/D junctions that have an annealing temperature of 200℃. The silicidation process was optimized by measuring the electrical characteristics of the Ni-silicided Schottky diodes. As a result, the Ion/Ioff current ratio is about 1.4×10⁵ and the subthreshold swing and field effect mobility are 0.42 V/dec and 14 cm²/V·s at a drain voltage of −1 V, respectively.

• 한국재료학회지
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• 제17권7호
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• pp.361-365
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• 2007

A deoxidized low-phosphorous copper processed by eight cycles of accumulative roll-bonding (ARB) was annealed at various temperatures ranging from 100 to $400^{\circ}C$. The annealed copper was characterized by transmission electron microscopy (TEM) and tensile & hardness test. TEM observation revealed that the ultrafine grains developed by the ARB still remained up to $350^{\circ}C$, however above $400^{\circ}C$ they were replaced by equiaxed and coarse grains due to an occurrence of the static recrystallization. The hardness of the copper decreased slightly with the annealing temperature up to $350^{\circ}C$, however they dropped largely above $400^{\circ}C$. Annealing characteristics of the copper were compared with those of an oxygen free copper processed by ARB and subsequently annealed.

• 한국세라믹학회지
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• 제34권9호
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• pp.941-948
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• 1997

CuCl nanocrystallites dispersed nonlinear optical silica and borosilicate glasses were fabricated by sol-gel process. CuCl powder was dissolved in TEOS(Si(OC2H5)4) and TMB((CH3O)3B), precursors of silica and borosilicate glasses, with ethanol, water and HCl, and precipitated through the heat treatment in the matrix glass. The optical properties of CuCl doped glasses were measured using the spectrophotometer at room temperature and low temperature(77K); Z1, 2 and Z3 exciton peaks from the absorption spectra, were observed at about 370 nm and 380 nm, respectively. The average radius of nanocrystallites, calculated from the blue shift of Z3 excitons, was measured according to annealing temperature and time. The precipitation temperature of CuCl nanocrystallites was decreased when boron was added to silica glass. Increase of annealing temperature and time made average radius of nanocrystallites saturated about 2 nm.