• Title/Summary/Keyword: Low resistance

Search Result 4,974, Processing Time 0.032 seconds

Evaluation of Fracture Detection Function for the Concrete by Self-Diagnosis CPGFRP (자기진단 CPGFRP의 파괴예측기능 평가를 위한 콘크리트 적용실험)

  • 최현수;박진섭;정민수;강병희
    • Proceedings of the Korean Institute of Building Construction Conference
    • /
    • 2003.05a
    • /
    • pp.27-31
    • /
    • 2003
  • To maintain serviceability of concrete structure more than proper it is necessary not only predict service life through periodical monitor but also need monitoring system to recognize optimal time and method for repair. Recently, CPGFRP, replacing some GFRP with CF, is developed and used for monitoring concrete fraction. But dramatic resistance change of CPGFRP is showed below 0.5% strain and it is not small strain in terms of monitoring micro crack in concrete. In other word, monitoring with CF is not suitable in low stress but hight stress. In this study, we accessed applicable possibility and reliability of CPGFRP composite as monitoring sense that is proved very sensitive to stress through domestic and oversea previous study. CPGFRP composite plays a role in specimen like steel and increases flexural strength. CPGFRP composite shows resistance increasement in micro crack. In particular, CPGFRP is more sensitive than strangage in low stress. Resistance change ratio curve is very similar to strain curve so sensitivity and reliability is very excellent to monitor concrete fracture.

  • PDF

Planar Hall Effect of GaMnAs Grown via low Temperature Molecular Beam Epitaxy (저온 분자선에피탁시 방법으로 성장시킨 GaMnAs의 planar Hall 효과)

  • Kim, Gyeong-Hyeon;Park, Jong-Hun;Kim, Byeong-Du;Kim, Do-Jin;Kim, Hyo-Jin;Im, Yeong-Eon;Kim, Chang-Su
    • Korean Journal of Materials Research
    • /
    • v.12 no.3
    • /
    • pp.195-199
    • /
    • 2002
  • Planar Hall effect of ferromagnetic GaMnAs thin films was investigated for the first time. The films were grown in an optimized growth condition via molecular beam epitaxy at low temperatures. For the optimization of the growth conditions, we used reflection high-energy electron diffraction, electrical conductivity, double crystal x-ray diffraction, and superconducting quantum interference device measurements techniques. We observed that the difference between the longitudinal resistance and the transverse resistance matches the planar Hall resistance. The ratio of the planar Hall resistance at saturation magnetic field to that at zero reached above 500%.

Friction Stir Welding of Ferritice Stainless Steel (페라이트계 스테인리스강의 마찰교반접합)

  • Ahn, Byung-Wook;Choi, Don-Hyun;Yeon, Yun-Mo;Jung, Seung-Boo
    • Journal of Welding and Joining
    • /
    • v.32 no.2
    • /
    • pp.14-17
    • /
    • 2014
  • Ferritic stainless steels are widely used in the construction industry and in exhaust manifolds due to their low cost and relatively superior stress corrosion cracking resistance and pitting corrosion resistance compared to austenite stainless steels. Ferritic stainless steels are currently welded by various welding process including gas tungsten arc welding (GTAW), electron resistance welding (ERW) and laser beam welding. However, when these stainless steels are welded by fusion welding, some problems occur in the fusion zone (FZ) and heat affected zone (HAZ). First, the ductility of the weld is reduced due to the grain growth in the FZ and HAZ. Second, as its HAZ is frequently sensitized during welding, corrosion resistance deteriorates in this region due to the Cr depletion zone. To prevent these problems, it is recommended that ferritic stainless steels be welded with a low heat input. In this study, recent researches in the view of friction stir welded ferritic stainless steels are briefly reviewed.

Characteristics of copper/C films on PET substrate prepared by ECR-MOCVD at room temperature (상온 ECR-MOCVD에 의해 제조되는 Cu/C박막특성)

  • Lee, Joong-Kee;Jeon, Bup-Ju;Hyun, Jin;Byun, Dong-Jin
    • Journal of the Korea Institute of Military Science and Technology
    • /
    • v.6 no.3
    • /
    • pp.44-53
    • /
    • 2003
  • Cu/C films were prepared at room temperature under $Cu(hfac)_2-Ar-H_2$ atmosphere in order to obtain metallized polymer by using ECR-MOCVD(Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with a DC bias system. The room temperature MOCVD on polymer substrate could be possible by collaboration of ECR and a DC bias. Structural analysis of the films by ECR was found that fine copper grains embedded in an amorphous polymer matrix with indistinctive interfacial layer. The increase in $H_2$ contents brought on copper-rich film formation with low electric resistance. On the other hand carbon-rich films with low sheet electric resistance were prepared in argon atmosphere. The electric sheet resistance of Cu/C films with good interfacial property were controlled at $10^8$~$10^0$ Ohm/sq. ranges by the $H_2$/Ar mole ratio and the shielding effectiveness of the film showed maximum up to 45dB in the our experimental range.

Analysis of Hot-Carrier Effects in High-Voltage LDMOSFETs (고전압 LDMOSFET의 Hot-Carreir 효과에 의한 특성분석)

  • Park, Hoon-Soo;Lee, Young-Ki;Kwon, Young-Kyu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.07a
    • /
    • pp.199-200
    • /
    • 2005
  • In this paper, the electrical characteristics and hot-carrier induced electrical performance degradations of high-voltage LDMOSFET fabricated by the existing CMOS technology were investigated. Different from the low voltage CMOS device, the only specific on-resistance was degraded due to hot-carrier stressing in LDMOS transistor. However, other electrical parameters such as threshold voltage, transconductance, and saturated drain current were not degraded after stressing. The amount of on-resistance degradation of LDMOS transistor that was implanted n-well with $1.0\times10^{13}/cm^2$ was approximately 1.6 times more than that of LDMOS transistor implanted n-well with $1.0\times10^{12}/cm^2$. Similar to low voltage CMOS device, the peak on-resistance degradation in LDMOS device was observed at gate voltage of 2.2V while the drain applied voltage was 50V. It means that the maximum impact ionization at the drain junction occurs at the gate voltage of 2.2V applying the drain voltage of 50V.

  • PDF

Fabrication of 316L Stainless Steel having Low Contact Resistance for PEMFC Separator using Powder Metallurgy (분말야금법에 의한 고분자전해질 연료전지 분리판용 저접촉저항 316L 스테인리스강 복합소재 제조)

  • Choi, Joon Hwan;Kim, Myong-Hwan;Kim, Yong-Jin
    • Korean Journal of Metals and Materials
    • /
    • v.46 no.12
    • /
    • pp.817-822
    • /
    • 2008
  • Metal matrix composite (MMC) materials having low electrical contact resistance based on 316L stainless steel (STS) matrix alloy with $ZrB_2$ particles were fabricated for PEMFC (Polymer Electrolyte Membrane Fuel Cell) separator by powder metallurgy (PM). The effects of the boride particle addition into the matrix alloy on microstructure, surface morphology, and interfacial contact resistance (ICR) between the samples and gas diffusion layer (GDL) were investigated. Both conventional and PM 316L STS samples showed high ICR due to the existence of non-conductive passive film on the alloy surface. The addition of the boride particles, however, remarkably reduced ICR of the samples. SEM observation revealed that the boride particles were protruded out of the matrix surface and particle density existing on the surface increased with increasing the boride content, causing increase of the total contact area between the conductive particles and GDL. ICR of the samples also decreased with increasing the boride content resulted from the increased contact area.

Conduction Noise Absorption by Sn-O Thin Films on Microstrip Lines (마이크로스트립 선로에서 Sn-O 박막의 전도노이즈 흡수 특성)

  • Kim, Sung-Soo
    • Korean Journal of Metals and Materials
    • /
    • v.49 no.4
    • /
    • pp.329-333
    • /
    • 2011
  • To develop wide-band noise absorbers with a special design for low-frequency performance, this study proposes a tin oxide (Sn-O) thin films as the noise absorbing materials in a microstrip line. Sn-O thin films were deposited on polyimide film substrates by reactive sputtering of the Sn target under flowing $O_{2}$ gas, exhibiting a wide variation of surface resistance (in the range of $10^{0}-10^{5}{\Omega}$) depending on the oxygen partial pressure during deposition. The microstrip line with characteristic impedance of $50\Omega$ was used for the measurement of noise absorption by the Sn-O films. The reflection parameter $(S_{11})$ increased with a decrease of surface resistance due to an impedance mismatch at the boundary between the film and the microstrip line. Meanwhile, the transmission parameter $(S_{21})$ diminished with a decrease of surface resistance resulting from an Ohmic loss of the Sn-O films. The maximum noise absorption predicted at an optimum surface resistance of the Sn-O films was about $150{\Omega}$. For this film, greater power absorption is predicted in the lower frequency region (about 70% at 1 GHz) than in conventional magnetic sheets of high magnetic loss, indicating that Ohmic loss is the predominant loss parameter for the conduction noise absorption in the low frequency band.

Effect of High-Intensity Complex Exercise Program Using Whole-Body Vibration and Respiratory Resistance for Low Back Pain Patients with High Obesity

  • Park, Sam-Ho;Lee, Myung-Mo
    • Physical Therapy Rehabilitation Science
    • /
    • v.11 no.1
    • /
    • pp.78-87
    • /
    • 2022
  • Objective: The purpose of this study was to investigate the effect of high-intensity complex exercise program using whole-body vibration (WBV) and respiratory resistance on pain and dysfunction, psychosocial level, balance ability, and pulmonary function in low back pain (LBP) patients with high obesity. Design: A randomized controlled trial Methods: A total of 44 LBP patients withhigh obesity (body mass index, BMI≥30kg/m2) were randomly assigned to an experimental group (n=22) and a control group (n=22). Both groups underwent a lumbar stabilization exercise program. In addition, the experimental group implemented the high-intensity complex exercise program combined with WBV and respiratory resistance. In order to compare the effects depending on the intervention methods, numeric pain rating scale (NRPS), Roland-Morris disability questionnaire (RMDQ), fear-avoidance beliefs questionnaire (FABQ), balance ability, and pulmonary function were used for measurement. Results: Both groups showed significant differences in NRPS, RMDQ, FABQ, balance ability before and after intervention (p<0.05). In addition, the experimental groupshowed significant difference in the amount of change in RMDQ, balance ability and pulmonary function values than the control group (p<0.05). Conclusions: High-intensity complex exercise program using WBV and respiratory resistance has been proven to be an effective and clinically useful method to decrease dysfunction, increase balance ablilty, and pulmonary function for LBP patients with high obesity.

The Characteristic Study of Plasma Electrolytic Oxidation in AZ31B Magnesium Alloy

  • Yu, Jae-Yong;Choi, Soon-Don;Yu, Jae-In;Yun, Jae-Gon;Ko, Hoon;Jung, Yeon-Jae
    • Journal of Electrical Engineering and Technology
    • /
    • v.10 no.4
    • /
    • pp.1746-1751
    • /
    • 2015
  • In this study low voltage Plasma Electrolytic Oxidation (PEO) was utilized to eliminate high voltage PEO drawbacks such as high cost, dimensional deformation and porosity. Low voltage PEO produces a thin coating which causes low corrosion resistance. In order to solve such problem, 0.1~0.6M pyrophosphates were added in a bath containing 1.4M NaOH, and 0.35M Na2SiO3. 70 V PEO was conducted at 25℃ for 3 minutes. Chemical composition, morphology and corrosion resistance of the anodized coating were analyzed. The anodized film was composed of MgO, Mg2SiO4, and Mg2O7P2. The morphology of film showed appropriately dense structure and low porosity in the anodized layers. It is found that low voltage Plasma Electrolytic Oxidation in cooperation with phosphating treatment can provide a good corrosion protection for the AZ31B magnesium alloy.

Analysis on the Short Circuit Current of a Low Voltage Direct Current(DC) Distribution System using PSCAD/EMTDC (PSCAD/EMTDC를 이용한 저전압 직류 배전 시스템의 단락 고장 전류 분석)

  • Ahn, Jae-Min;Jeon, Jeong-Chay;Lim, Young-Bae;Bae, Seok-Myeong;Byeon, Gil-Sung;Lee, Kyoung-Ho
    • The Transactions of the Korean Institute of Electrical Engineers P
    • /
    • v.59 no.4
    • /
    • pp.473-476
    • /
    • 2010
  • In this paper, we analyzed the short circuit current of a low voltage direct current distribution system. For the analysis, we performed the modeling of the low voltage direct current distribution system with a 6-pulse three-phase thyristor rectifier using the PSCAD/EMTDC, surveyed impedance of sources, transformers and distribution lines to run a simulation. A result of the simulation is that short circuit currents of the direct current distribution system with the rectifier decreased due to a thyristor-ON-resistance(Ron). But in case of the low thyristor-ON resistance, output fault current of the rectifier increased over three-phase short circuit current of an AC power system without a rectifier by regular ratio of the rectifier. Because the output fault current of the rectifier can increase over interrupting the capacity of circuit breakers, studying short circuit currents of a low voltage direct current distribution system with a rectifier is necessary for introducing the direct current distribution systems.