• Title/Summary/Keyword: Low resistance

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온도특성을 고려한 공항 저압간선의 경제적인 설계기법에 관한 연구 (A Study on the Economical Design of Airport Low-Voltage Feeder Which is considering the Temperature Character)

  • 최홍규;조계술;송영주
    • 조명전기설비학회논문지
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    • 제17권3호
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    • pp.119-126
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    • 2003
  • 공항과 같이 간선이 길게 포설될 수 있는 장소의 저압간선 굵기는 해당 케이블의 허용전류와 전력계통의 전압강하를 고려하며 결정된다. 비록 도체의 허용전류 값이 부하의 허용전류 값에 비하여 여유가 있을지라도 계통의 허용전압강하를 고려할 경우 도체의 굵기는 비교적 크게 산정될 수 있다. 이러한 경우에, 도체의 허용전류 값은 부하의 최대전류 값보다 훨씬 크게 산정될 수 있으며 상대적으로 도체에서 발생되는 열은 감소하게 된다. 도체의 최대 허용온도에 보정된 도체의 교류저항 값이 저압간선의 굵기 산정을 위한 전압강하 계산공식에 적용되어 왔으며, 도체의 저항 값은 도체의 실제 온도상승 값이 적용된 저항 값에 비하여 크다 본 연구는 도체의 실제 온도상승 값이 보정된 도체의 저항 값을 적용하여 저압간선 굵기 선정 설계 실무에 적용할 수 있도록 일반적인 계산 방식에 비하여 오차가 적은 경제적인 설계 방식을 연구하였다.

構造용高炭素鋼材 의 高溫 低 사이클 피勞擧動 에 關한 硏究 (A Study on Low-Cycle Fatigue Behavior at Elevated Temperature of High Carbon Steel Used For Structural Purpose)

  • 옹장우;김재훈
    • 대한기계학회논문집
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    • 제6권2호
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    • pp.101-106
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    • 1982
  • This study was undertaken to determine tensile properties and low-cycle fatigue behavior of 0.6%C high carbon steel used of structural purposes at temperatures up to 500.deg.C. In the low-cycle fatigue test the upper limit was decided by elongation(i.e. the total strain range), while the lower limit was defined by the load (i.e. zero load). The following results were obtained. Both, the ultimate tensile strength and low-cycle fatigue resistance attain the maximum values near 250.deg.C. Above this temperature the values decrease rapidly as the temperature increases. The low-cycle fatigue resistance decreases whenever there is an increase of the total strain range. Because the hardness of cycle fatigued specimen correlates cyclic hardening and cyclic softening, therefore the hardness of cycle fatigued specimen is smaller than that of the nonfatigued specimen at room temperature and 500.deg.C but much larger than the hardness of the nonfatigued specimen near 250.deg.C.

Interconnecting Nanomaterials for Flexible Substrate and Direct Writing Process

  • 좌용호
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2012년도 춘계학술발표대회
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    • pp.58.1-58.1
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    • 2012
  • Direct write technologies provide flexible and economic means to manufacture low-cost large-area electronics. In this regard inkjet printing has frequently been used for the fabrication of electronic devices. Full advantage of this method, which is capable of reliable direct patterning with line and space dimensions in the 10 to 100 um regime, is only made with all-solution based processing. Among these printable electronic materials, silver and copper nanoparticles have been used as interconnecting materials. Specially, solutions of organic-encapsulated silver and copper nanoparticles may be printed and subsequently annealed to form low-resistance conductor patterns. In this talk, we describe novel processes for forming silver nanoplates and copper ion complex which have unique properties, and discuss the optimization of the printing/annealing processes to demonstrate plastic-compatible low-resistance conductors. By optimizing both the interconnecting materials and the surface treatments of substrate, it is possible to produce particles that anneal at low-temperatures (< $200^{\circ}C$) to form continuous films having low resistivity and appropriate work function for formation of rectifying contacts.

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저전압 능동 인덕터 VCO를 이용한 주파수 합성기 (A Frequency Synthesizer using Low Voltage Active Inductor VCO)

  • 이순재;이동건;정항근
    • 전기학회논문지
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    • 제59권2호
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    • pp.471-475
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    • 2010
  • This paper presents a frequency synthesizer using low voltage active inductor VCO(Voltage Controlled Oscillator). The low voltage active inductor VCO with feedback resistor increases its equivalent inductance and the quality-factor(Q). Under certain conditions, the low voltage active inductor with feedback resistor generates a negative resistance at the input. In this paper, the conditions for negative resistance are obtained by small signal analysis. The designed low voltage active inductor VCO covers a frequency band between 1059MHz and 1223MHz. The measured phase noise at 1.178GHz is -81.8dBc/Hz at 1MHz offset.

Further study on level ice resistance and channel resistance for an icebreaking vessel

  • Hu, Jian;Zhou, Li
    • International Journal of Naval Architecture and Ocean Engineering
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    • 제8권2호
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    • pp.169-176
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    • 2016
  • In this paper, further research is carried out to investigate the resistance encountered by an icebreaking vessel travelling through level ice and channel ice at low speed range. The present paper focuses on experimental and calculated ice resistances by some empirical formulas in both level ice and channel ice. In order to achieve the research, extra model tests have been done in an ice basin. Based on the measurements from model test, it is found that there exists a relationship between ice resistance, minimum ice load, maximum ice load and the standard deviation of ice load for head on operation in level ice. In addition, both level ice resistance and channel ice resistance are calculated and compared with model test results.

Research on theoretical optimization and experimental verification of minimum resistance hull form based on Rankine source method

  • Zhang, Bao-Ji;Zhang, Zhu-Xin
    • International Journal of Naval Architecture and Ocean Engineering
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    • 제7권5호
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    • pp.785-794
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    • 2015
  • To obtain low resistance and high efficiency energy-saving ship, minimum total resistance hull form design method is studied based on potential flow theory of wave-making resistance and considering the effects of tail viscous separation. With the sum of wave resistance and viscous resistance as objective functions and the parameters of B-Spline function as design variables, mathematical models are built using Nonlinear Programming Method (NLP) ensuring the basic limit of displacement and considering rear viscous separation. We develop ship lines optimization procedures with intellectual property rights. Series60 is used as parent ship in optimization design to obtain improved ship (Series60-1) theoretically. Then drag tests for the improved ship (Series60-1) is made to get the actual minimum total resistance hull form.

Optimization for Permeability and Electrical Resistance of Porous Alumina-Based Ceramics

  • Kim, Jae;Ha, Jang-Hoon;Lee, Jongman;Song, In-Hyuck
    • 한국세라믹학회지
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    • 제53권5호
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    • pp.548-556
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    • 2016
  • Recently, porous alumina-based ceramics have been extensively applied in the semi-conductor and display industries, because of their high mechanical strength, high chemical resistance, and high thermal resistance. However, the high electrical resistance of alumina-based ceramics has a negative effect in many applications due to the generation of static electricity. The low electrical resistance and high air permeability are key aspects in using porous alumina-based ceramics as vacuum chucks in the semi-conductor industry. In this study, we tailored the pore structure of porous alumina-based ceramics by adjusting the mixing ratio of the starting alumina, which has different particle sizes. And the electrical resistance was controlled by using chemical additives. The characteristics of the specimens were studied using scanning electron microscopy, mercury porosimetry, capillary flow porosimetry, a universal testing machine, X-ray diffraction, and a high-resistance meter.

IC소자용 질화 텅스텐 박막의 면저항 특성 (The Sheet Resistance Properties of Tungsten Nitride Thin films for Intergrated Circuit)

  • 이우선;정용호;김남오;정종상;유병수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.94-97
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    • 1997
  • We investigated the sheet resistance properties of tungsten nitride thin films deposited by RF and DC sputtering system. It deposited at various conditions that determine the sheet resistance. The properties of the sheet resistance of these films were measured under various conditions. Sheet resistance analysed under the flow rate of the argon gas and contents of nitrogen from nitrogen-argon gas mixtures. We found that these sheet resistance were largely depend on the temperature of substrate, gas flow rate and RF power. Very high and low sheet resistance of tungsten films obtained by DC sputtering. As the increase of contents of nitrogen gas obtained from nitrogen-argon gas mixture, tungsten nitride thin films deposited by the reactive DC sputtering and the sheet resistance of these films were increased.

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리튬 불소계 화합물과 4차 암모늄염을 사용한 대전방지제의 표면저항 및 대전방지필름의 특성 평가 (Surface Resistance of Antistatic Agent Using Lithium-Fluoro Compound and Quaternary Ammonium Salt and Characteristics Evaluation of Antistatic Film)

  • 소순영;전용진;이재경
    • 한국산학기술학회논문지
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    • 제21권4호
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    • pp.575-581
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    • 2020
  • 낮은 표면저항값과 높은 투과도가 요구되는 LCD용 대전방지필름에 사용할 수 있는 무색상을 지닌 대전방지제를 개발하였다. 리튬 불소계 화합물과 4차 암모늄염 중에서 전기전도도를 바탕으로 대전방지 물질을 선정하고 대전방지제를 제조하여 표면저항값을 측정하였다. 그 결과 대체적으로 전도도가 높은 물질이 비교적 낮은 표면저항값 즉 상대적으로 양호한 대전방지 성능을 보여주고 있음을 알 수 있었다. 선정된 대전방지 물질을 중심으로 최적의 대전방지제를 제조하는 배합비를 실험계획법을 통하여 수립하고 각 인자들이 미치는 영향을 분석하였다. 대전방지 물질로 사용한 리튬 불소계 화합물의 사용량이 많을수록, 상대적으로 다관능기를 갖는 올리고머의 사용비율이 높을수록 표면저항값이 작게 나타났다. 4차 암모늄염은 리튬 불소계 화합물의 대전방지 성능을 증가시켰으나 사용량에 따른 영향은 상대적으로 크지 않았다. 대전방지용 PET 필름을 제조한 후 특성을 평가한 결과 낮은 표면저항값(<109 Ω/sq.) 및 높은 투과도(>92%), 낮은 헤이즈(<0.5%) 및 높은 백색도(L>95)를 나타내었다. 또한 고온 고습의 조건하에서도 10% 이내의 안정적인 표면저항 변화율을 보임으로서 대전방지필름의 신뢰도가 아주 우수함을 확인하였다.

상사축척법에 기반한 저마찰 선박 방오도료의 실선 마찰저항 저감성능 추정 (Full Scale Frictional Resistance Reduction Effect of a Low Frictional Marine Anti-fouling Paint based on a Similarity Scaling Method)

  • 양정우;박현;이인원
    • 대한조선학회논문집
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    • 제54권1호
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    • pp.71-81
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    • 2017
  • In this study, a series of full-scale extrapolation procedures based on the Granville's similarity scaling method, which was employed by Schultz (2007), is modified and then applied to compare the resistance performance between two different anti-fouling coatings. As an analysis example, the low frictional AF coating based on a novel skin-friction reducing polymer named FDR-SPC (Frictional Drag Reduction Self-Polishing Copolymer), which had been invented by the present author, is employed. The low frictional coating, which gives 25.4% skin frictional reduction in lab test, is estimated to give 18.2% total resistance reduction for a 176k DWT bulk carrier.