• Journal of electromagnetic engineering and science
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• v.11 no.1
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• pp.27-33
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• 2011

In this paper, we propose a high gain, current reused ultra wideband (UWB) low noise amplifier (LNA) that uses TSMC 0.18 ${\mu}m$ CMOS technology. To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilized in the first stage. A ${\pi}$-type LC network is adopted in the second stage to achieve sufficient gain over the entire frequency band. The proposed UWB LNA has a voltage gain of 12.9~18.1 dB and a noise figure (NF) of 4.05~6.21 dB over the frequency band of interest (1~10 GHz). The total power consumption of the proposed UWB LNA is 10.1 mW from a 1.4 V supply voltage, and the chip area is $0.95{\times}0.9$ mm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.5
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• pp.682-685
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• 2020

In this paper, we analyze the dominant noise source of conventional inductively degenerated common-source (CS) cascode low noise amplifier (LNA) when width and gate length of stacked transistors vary. Analytical MOSFET and its noise model are used to estimate the contributions of noise sources. All parameters are based on measured data of 60nm, 90nm and 130nm CMOS devices. Based on the noise analysis for different frequencies and device parameters including process nodes, the dominant noise source can be analyzed to optimize noise figure on the configuration. We verified analytically that the intuctively degenerated CS topology can not sustain its benefits in noise above a certain operation frequency of LNA over different process nodes.

• ETRI Journal
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• v.24 no.3
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• pp.190-196
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• 2002

This paper presents millimeter wave monolithic microwave integrated circuit (MMIC) low noise amplifiers using a $0.15{\mu}m$ commercial pHEMT process. After carefully investigating design considerations for millimeter-wave applications, with emphasis on the active device model and electomagnetic (EM) simulation, we designed two single-ended low noise amplifiers, one for Q-band and one for V-band. The Q-band two stage amplifier showed an average noise figure of 2.2 dB with an 18.3 dB average gain at 44 GHz. The V-band two stage amplifier showed an average noise figure of 2.9 dB with a 14.7 dB average gain at 65 GHz. Our design technique and model demonstrates good agreement between measured and predicted results. Compared with the published data, this work also presents state-of-the-art performance in terms of the gain and noise figure.

• Journal of Biomedical Engineering Research
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• v.32 no.1
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• pp.45-54
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• 2011

Cuff electrodes have a benefit for chronic electroneurogram(ENG) recording while minimizing nerve damage. However, the ENG signals are usually contaminated by electromyogram(EMG) activity from the surrounding muscle, the thermal noise generated within the source resistance, and the electric noise generated primarily at the first stage of the amplifier. This paper proposes a new cuff electrode to reduce the interference of EMG signals. An additional middle electrode was placed at the center of cuff electrode. As a result, the proposed cuff electrode achieved a higher signal-to-interference ratio compared to the conventional tripolar cuff. The cuff electrode was then assembled together with closure, headstage, and hermetic case including electronic circuits. This paper also presents a lownoise amplifier system to improve signal-to-noise ratio. The circuit was designed based on the noise analysis to minimize the electronic noise. The result shows that the total noise of the amplifier was below $1{\mu}V_{rms}$ for a cuff impedance of $1\;k{\Omega}$ and the common-mode rejection ratio was 115 dB at 1 kHz. In the current study, the performance of nerve cuff electrode system was evaluated by monitoring afferent nerve signals under mechanical stimuli in a rat animal model.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.3
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• pp.569-577
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• 1999

A wideband RF receiver for satellite mobile communications system was fabricated and evaluated of performance in low noise amplifier and high gain amplifier. The low noise amplifier used to the resistive decoupling and self-bias circuits. The low noise amplifier is fabricated with both the RF circuits and the self-bias circuits. Using a INA-03184, the high gain amplifier consists of matched amplifier type. The active bias circuitry can be used to provide temperature stability without requiring the large voltage drop or relatively high-dissipated power needed with a bias stabilized resistor. The bandpass filter was used to reduce a spurious level. As a result, the characteristics of the receiver implemented here show more than 55 dB in gain, 50.83 dBc in a spurious level and less than 1.8 : 1 in input and output voltage standing wave ratio(VSWR), especially the carrier to noise ratio is a 43.15 dB/Hz at a 1 KHz from 1537.5 MHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.4
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• pp.28-39
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• 2007

This paper presents a programmable RF DFT (Radio Frequency Design-for-Testability) circuit for low noise amplifiers. We have developed a new on-chip RF DFT circuit that measures RF parameters of low noise amplifier (LNA) using only DC measurements [1, 2]. This circuit is extremely useful for today's RFIC devices in a complete RF transceiver environment. The DFT circuit contains test amplifier with programmable capacitor banks and RF peak detectors. The test circuit utilizes output DC voltage measurements and these measured values are translated into the LNA specifications such as input impedance and gain using the mathematical equations. Our on-chip DFT circuit can be self programmed for 1.8GHz, 2.4GHz and 5.25GHz low noise amplifiers for GSM, Bluetooth and IEEE802.11g standards. The circuit is simple and inexpensive.

• Journal of the Korean Institute of Navigation
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• v.25 no.1
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• pp.53-60
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• 2001

This paper presents the fabrication of the LNA which is operating at 2.13 ~ 2.16 GHz for IMT-2000 front-end receiver using series feedback and resistive decoupling circuit. Series feedback added to the source lead of a GaAs FET keeps the low noise characteristics and drops the input reflection coefficient of a low noise amplifier simultaneously. Also, it increases the stability of the LNA. Resistive decoupling circuit is suitable for input stage matching because a signal at low frequency is dissipated by a resistor in the matching network. The amplifier consists of GaAs FET ATF-10136 for low noise stage and VNA-25 which is internally matched MMIC for high gain stage. The amplifier is fabricated with both the RF circuits and self bias circuit on the Teflon substrate with 3.5 permittivity. The measured results of the LNA which is fabricated using the above design technique are presented more than 30 dB in gain, PldB 17 dB and less than 0.7 dB in noise figure, 1.5 in inputㆍoutput SWR(Standing Wave Ratio).

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.219-225
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• 2012

A low-power, low-noise pre-amplifier for digital hearing-aid application is designed. This pre-amplifier amplifies single-ended signal from an electret microphone, and produces differential output to be delivered to an ADC. It has a variable gain of 3.6, 7.2, 14.4 and 28.8 with a bandwidth between 100Hz~10kHzon. The measurement results show 85 dB of SNR, 0.05 % of harmonic distortion and $200{\mu}W$ of power consumption with 1.2V supply.

• Journal of Sensor Science and Technology
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• v.26 no.5
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• pp.342-347
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• 2017

We present a precision instrument amplifier (IA) designed for bio-potential acquisition. The proposed IA employs a capacitively coupled instrument amplifier (CCIA) structure to achieve a rail-to-rail input common-mode range and low gain error. A positive feedback loop is applied to boost the input impedance. Also, DC servo loop (DSL) with pseudo resistors is adopted to suppress electrode offset for bio-potential sensing. The proposed amplifier was designed in a $0.18{\mu}m$ CMOS technology with 1.8V supply voltage. Simulation results show the integrated noise of $1.276{\mu}Vrms$ in a frequency range from 0.01 Hz to 1 KHz, 65dB SNR, 118dB CMRR, and $58M{\Omega}$ input impedance respectively. The total current of IA is $38{\mu}A$. It occupies $740{\mu}m$ by $1300{\mu}m$ including the passive on-chip low pass filter.

• 한국정보통신설비학회:학술대회논문집
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• 2006.08a
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• pp.215-218
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• 2006

In this paper, a small size, $7{\times}6mm^2$, Low Noise Amplifier(LNA) using LTCC process was fabricated with multi-layer structure for 2.4GHz wireless LAN. The measured results demonstrate that the bandwidth is 130 MHz, and the operating frequency is from 2.39GHz to 2.52GHz. The power gain is above 7.3 dB in the operating frequency range and the gain flatness is 0.5 dB. The maximum S11 is -4 dB and the maximum S22 is -7.5 dB. The noise figure is less than 1.83 dB. The measured power gain, S11 and S22 were had poorer performance than the simulation results. The reason for this discrepancy is that the input and output matching was not performed exactly. However, the noise figure of the LTCC low noise amplifier is better than simulation result. It is found that it is possible to fabricate a LTCC low noise amplifier in a small size.