• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1250-1259
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• 2012

In this paper, a time-domain comparator is proposed for a successive approximation (SA) analog-to-digital converter (ADC) with a low power and high resolution. The proposed time-domain comparator consists of a voltage-controlled delay converter with a clock feed-through compensation circuit, a time amplifier, and binary phase detector. It has a small input capacitance and compensates the clock feed-through noise. To analyze the performance of the proposed time-domain comparator, two 1V 10-bit 200-kS/s SA ADCs with a different time-domain comparator are implemented by using 0.18-${\mu}m$ 1-poly 6-metal CMOS process. The measured SNDR of the implemented SA ADC is 56.27 dB for the analog input signal of 11.1 kHz, and the clock feed-through compensation circuit and time amplifier of the proposed time-domain comparator enhance the SNDR of about 6 dB. The power consumption and area of the implemented SA ADC are 10.39 ${\mu}W$ and 0.126 mm2, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.53-63
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• 2009

This work proposes a 10b 100MS/s 27.2mW $0.8mm^2$ 0.18um CMOS ADC for WLAN such as an IEEE 802.11n standard. The proposed ADC employs a three-stage pipeline architecture and minimizes power consumption and chip area by sharing as many circuits as possible. Two multiplying DACs share a single amplifier without MOS switches connected in series while the shared amplifier does not show a conventional memory effect. All three flash ADCs use only one resistor ladder while the second and third flash ADCs share all pre-amps to further reduce power consumption and chip area. The interpolation circuit employed in the flash ADCs halves the required number of pre-amps and an input-output isolated dynamic latch reduces the increased kickback noise caused by the pre-amp sharing. The prototype ADC implemented in a 0.18um n-well 1P6M CMOS process shows the DNL and INL within 0.83LSB and 1.52LSB at 10b, respectively. The ADC measures an SNDR of 52.1dB and an SFDR of 67.6dB at a sampling rate of 100MS/s. The ADC with an active die area of $0.8mm^2$ consumes 27.2mW at 1.8V and 100MS/s.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.5
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• pp.613-623
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• 2012

In this paper, we present an ultra miniaturized voltage tuned oscillator, with HMIC-type amplifier and phase shifter, using LTCC artificial dielectric resonator. ADR which consists of periodic conductor patterns and stacked layers has a smaller size than a dielectric resonator. The design specification of ADR is obtained from the design goal of oscillator. The structure of the ADR with a stacked circular disk type is chosen. The resonance characteristic, physical dimension and stack number are analyzed. For miniaturization of ADRO, the ADR is internally implemented at the upper part of the LTCC substrate and the other circuits, which are amplifier and phase shifter are integrated at the bottom side respectively. The fabricated ADRO has ultra small size of $13{\times}13{\times}3mm^3$ and is a SMT type. The designed ADRO satisfies the open-loop oscillation condition at the design frequency. As a results, the oscillation frequency range is 2.025~2.108 GHz at a tuning voltage of 0~5 V. The phase noise is $-109{\pm}4$ dBc/Hz at 100 kHz offset frequency and the power is $6.8{\pm}0.2$ dBm. The power frequency tuning normalized figure of merit is -30.88 dB.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.37-47
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• 2006

This work proposes a 10b 25MS/s $0.8mm^2$ 4.8mW 0.13um CMOS A/D Converter (ADC) for high-performance wireless communication systems such as DVB, DAB and DMB simultaneously requiring low voltage, low power, and small area. A two-stage pipeline architecture minimizes the overall chip area and power dissipation of the proposed ADC at the target resolution and sampling rate while switched-bias power reduction techniques reduce the power consumption of analog amplifiers. A low-power sample-and-hold amplifier maintains 10b resolution for input frequencies up to 60MHz based on a single-stage amplifier and nominal CMOS sampling switches using low threshold-voltage transistors. A signal insensitive 3-D fully symmetric layout reduces the capacitor and device mismatch of a multiplying D/A converter while low-noise reference currents and voltages are implemented on chip with optional off-chip voltage references. The employed down-sampling clock signal selects the sampling rate of 25MS/s or 10MS/s with a reduced power depending on applications. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates the measured DNL and INL within 0.42LSB and 0.91LSB and shows a maximum SNDR and SFDR of 56dB and 65dB at all sampling frequencies up to 2SMS/s, respectively. The ADC with an active die area if $0.8mm^2$ consumes 4.8mW at 25MS/s and 2.4mW at 10MS/s at a 1.2V supply.

• ETRI Journal
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• v.26 no.3
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• pp.229-240
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• 2004

This paper reports on our development of a dual-mode transceiver for a CMOS high-rate Bluetooth system-onchip solution. The transceiver includes most of the radio building blocks such as an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, a variable gain amplifier (VGA), a dc offset cancellation circuit, a quadrature local oscillator (LO) generator, and an RF front-end. It is designed for both the normal-rate Bluetooth with an instantaneous bit rate of 1 Mb/s and the high-rate Bluetooth of up to 12 Mb/s. The receiver employs a dualconversion combined with a baseband dual-path architecture for resolving many problems such as flicker noise, dc offset, and power consumption of the dual-mode system. The transceiver requires none of the external image-rejection and intermediate frequency (IF) channel filters by using an LO of 1.6 GHz and the fifth order onchip filters. The chip is fabricated on a $6.5-mm^{2}$ die using a standard $0.25-{\mu}m$ CMOS technology. Experimental results show an in-band image-rejection ratio of 40 dB, an IIP3 of -5 dBm, and a sensitivity of -77 dBm for the Bluetooth mode when the losses from the external components are compensated. It consumes 42 mA in receive ${\pi}/4-diffrential$ quadrature phase-shift keying $({\pi}/4-DQPSK)$ mode of 8 Mb/s, 35 mA in receive GFSK mode of 1 Mb/s, and 32 mA in transmit mode from a 2.5-V supply. These results indicate that the architecture and circuits are adaptable to the implementation of a low-cost, multi-mode, high-speed wireless personal area network.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.9
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• pp.1858-1864
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• 2009

In this paper, we design a non-volatile memory IP, 1-kb one-time programmable (OTP) memory, used for power management ICs. Since a conventional OTP cell uses an isolated NMOS transistor as an antifuse, there is an advantage of it big cell size with the BCD process. We use, therefore, a PMOS transistor as an antifuse in lieu of the isolated NMOS transistor and minimize the cell size by optimizing the size of a OTP cell transistor. And we add an ESD protection circuit to the OTP core circuit to prevent an arbitrary cell from being programmed by a high voltage between the terminals of the PMOS antifuse when the ESD test is done. Furthermore, we propose a method of turning on a PMOS pull-up transistor of high impedance to eliminate a gate coupling noise in reading a non-programmed cell. The layout size of the designed 1-kb PMOS-type antifuse OTP IP with Dongbu's $0.18{\mu}m$ BCD is $129.93{\times}452.26{\mu}m^2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.379-388
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• 2007

This paper presents a real-time respiration and heartbeat detector comprised of a 1.6 GHz single-channel Doppler sensor and analog/digital signal processing block for remote vital sign detection. The RF front end of the Doppler sensor consists of an oscillator, mixer, low noise amplifier, branch-line hybrid and patch antenna. We apply artificial transmission lines(ATLs) to the branch-line hybrid, which leads to a size reduction of 40 % in the hybrid, while its performance is very comparable to that of a conventional hybrid. The analog signal conditioning block is implemented using second order Sallen-Key active filters and the digital signal processing block is realized with a LabVIEW program on a computer. The respiration and heartbeat detection is demonstrated at a distance of 50 cm using the developed system.

• Journal of Biomedical Engineering Research
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• v.28 no.3
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• pp.429-440
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• 2007

A coded excitation has been studied to improve the performance for ultrasound imaging in term of SNR, imaging frame rate, contrast to tissue ratio, and so forth. However, it requires a complicated arbitrary waveform transmitter for each active channel that is typically composed of a multi-bit Digital-to-Analog Converter (DAC) and a linear power amplifier (LPA). Not only does the LPA increase the cost and size of a transmitter block, but it consumes much power, increasing the system complexity further and causing a heating-up problem. This paper proposes an optimized 1.5bit fourth order sigma-delta modulation technique applicable to design an efficient arbitrary waveform generator with greatly reduced power dissipation and hardware. The proposed SDM can provide a required SQNR with a low over-sampling ratio of 4. To this end, the loop coefficients are optimized to minimize the quantization noise power in signal band while maintaining system stability. In addition, the decision level for the 1.5 bit quantizer is optimized for a given input waveform, which results in the SQNR improvement of more than 5dB. Computer simulation results show that the SQNR of a FM(frequency modulated) signal generated by using the proposed method is about 26dB, and the peak side-lobe level (PSL) of its compressed waveform on receive is -48dB.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.11
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• pp.77-83
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• 2009

In this paper, a selective feedback low-noise amplifier (LNA) has been realized in a $0.18{\mu}m$ CMOS technology to cover a number of wireless multi-standards. By exploiting notch filter, the SF-LNA demonstrates the measured results of the power gain (S21) of 11.5~13dB and the broadband input/output impedance matching of less than -10dB within the frequency bands of 820~960MHz and 1.5~2.5GHz, respectively. The chip dissipates 15mW from a single 1.8V supply, and occupies the area of $1.17\times1.0mm^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.70-79
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• 2016

This paper proposes a low-power range-scaled 14b 30 MS/s pipeline-SAR composite ADC for high-performance CIS applications. The SAR ADC is employed in the first stage to alleviate a sampling-time mismatch as observed in the conventional SHA-free architecture. A range-scaling technique processes a wide input range of 3.0VP-P without thick-gate-oxide transistors under a 1.8 V supply voltage. The first- and second-stage MDACs share a single amplifier to reduce power consumption and chip area. Moreover, two separate reference voltage drivers for the first-stage SAR ADC and the remaining pipeline stages reduce a reference voltage disturbance caused by the high-speed switching noise from the SAR ADC. The measured DNL and INL of the prototype ADC in a $0.18{\mu}m$ CMOS are within 0.88 LSB and 3.28 LSB, respectively. The ADC shows a maximum SNDR of 65.4 dB and SFDR of 78.9 dB at 30 MS/s, respectively. The ADC with an active die area of $1.43mm^2$ consumes 20.5 mW at a 1.8 V supply voltage and 30 MS/s, which corresponds to a figure-of-merit (FOM) of 0.45 pJ/conversion-step.