• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.2
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• pp.154-159
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• 2004

A new microflow rate controller for medical injection was developed and evaluated. The flow rate was controlled by changing the friction depth as well as the friction length of the micro-channel. A precise micro-fabrication of the micro-channel was requested for an accurate flow control. The friction depth was inversely proportional to the friction length, which gives a linear flow control to the channel length. The channel groove was fabricated with a plastic material. A rubber containing silicone oil was covered over the groove, which satisfies both lubrication and leakage prevention. The flow controller was validated by performing the numerical simulation and experiment. A good agreement was shown between computation and experiment.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.480-484
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• 2000

The channel length influence of n-channel Si-based FETs is investigated by computer simulation. Using a two-dimensional hydrodynamic model, devices having various gate length are examined. We have observed the characteristics of LDD model of MOSFET by investigating of their current, voltage, electric field and impact ionization. These devices are scaled using various factors. We have analyzed I-V characteristics and the effect of impact ionization according to channel length.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.16-21
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• 2006

A simple doping method to fabricate a very thin channel body of the p-type FinFETs with a 20 nm gate length by solid-phase-diffusion (SPD) process was developed. Using the poly-boron-films (PBF) as a novel diffusion source of boron and the rapid thermal annealing (RTA), the p-type sourcedrain extensions of the FinFET devices with a threedimensional structure were doped. The junction properties of boron doped regions were investigated by using the $p^+-n$ junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20-100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.

• ETRI Journal
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• v.20 no.1
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• pp.16-27
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• 1998

In this paper, we consider the acquisition performance of an IS-95 reverse link access channel slot as a function of system design parameters such as postdetection integration length and the number of access channel message block repetitons. The uncertainty region of the reverse link spreading codes compared to that of forward link is very small, since the uncertainty region of the reverse link is determined by a cell radius. Thus, the parallel acquisiton technique in the reverse link is more efficient than a serial acquisition technique in terms of implementation and of acquisition time. The parallel acquisition is achieved by a bank of N parallel I/Q noncoherent correlator are analyzed for band-limited noise and the Rayleigh fast fading channel. The detection probability is derived for multiple correct code-phase offsets and multipath fading. The probability of no message error is derived when rake combining, access channel message block combining, and Viterbi decoding are applied. Numerical results provide the acquisition performance for system design parameters such as postdetection integration length and number of access channel message block repetitions in case of a random access on a mobile station.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.24-31
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• 2003

Short channel effects (SCE) of bulk MOSFET with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate MOSFET have been analyzed using a evanescent-mode analysis. Analytical equations of the characteristics scaling-length (λ) for three structures have been derived and the accuracy of the calculated λ was verified by comparing to the device simulation result. It is found that the minimum channel length should be larger than 5λ and the depletion thickness of the SSR should be around 30 nm in order to be applicable to 70 nm CMOS technology. High-$textsc{k}$ dielectric shows a limitation in scaling due to the drain-field penetration through the dielectric unless the equivalent SiO2 thickness is very thin.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1991.10a
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• pp.205-209
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• 1991

The conventional modeling equations for planar MOSFET can not be directly used for zero or minus junction depth concave MOSFET. In this paper, we suggest a new model which can simulate the electrical characteristics of concave MOSFET. The threshold voltage modeling was achieved using the charge sharing method considering the relative difference of source and drain depletion widths. To analyze the ID-VDS characteristics, the conventional expressions for planar MOSFET were employed with the electrical channel length as an effective channel length and the channel length modulation factor as ${\alpha}$ΔL. By comparing the proposed model with experimental results, we could get reasonably similar curves and we proposed a concave MOSFET conditiion which shows no short channel effect of threshold voltage(V${\gamma}$).

• Korean Journal of Materials Research
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• v.18 no.5
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• pp.272-276
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• 2008

In submicron MOSFET devices, maintaining the ratio between the channel length (L) and the channel depth (D) at 3 : 1 or larger is known to be critical in preventing deleterious short-channel effects. In this study, n-type SOI-MOSFETs with a channel length of $0.1\;{\mu}m$ and a Si film thickness (channel depth) of $0.033\;{\mu}m$ (L : D = 3 : 1) were virtually fabricated using a TSUPREM-4 process simulator. To form functioning transistors on the very thin Si film, a protective layer of $0.08\;{\mu}m$-thick surface oxide was deposited prior to the source/drain ion implantation so as to dampen the speed of the incoming As ions. The p-type boron doping concentration of the Si film, in which the device channel is formed, was used as the key variable in the process simulation. The finished devices were electrically tested with a Medici device simulator. The result showed that, for a given channel doping concentration of $1.9{\sim}2.5\;{\times}\;10^{18}\;cm^{-3}$, the threshold voltage was $0.5{\sim}0.7\;V$, and the subthreshold swing was $70{\sim}80\;mV/dec$. These value ranges are all fairly reasonable and should form a 'magic region' in which SOI-MOSFETs run optimally.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.1C
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• pp.113-119
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• 2009

The training sequence with the appropriate length for equalization and initial synchronization is necessary before sending the pure data in the burst transmission type DS-UWB system. The length of the training sequence is one of the factors which make throughput decreased. The noble structure with the variable length of the training sequence whose length can be adaptively tailored according to the channel conditions (CM1,CM2,CM3,CM4) in the DS-USB systems is proposed. This structure can increase the throughput without sacrificing the performance than the method with fixed length of training sequence considering the worst case channel conditions. Simulation results under IEEE 802.15.3a channel model show that the proposed scheme can achieve higher throughput than a conventional one with the slight loss of BER performance. And this structure can reduce the computation complexity and power consumption with selecting the short length of the training sequence.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.867-869
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• 2008

We have investigated the effects of hydrogen plasma treatment by PECVD (Plasma Enhanced Chemical Vapor Deposition) in the back channel region, the method for reducing the off state leakage current which increases with the short channel length of a-Si:H TFTs. To improve the off current characteristics, we analyzed the hydrogen plasma treatment with various RF power and plasma treatment times of PECVD. As the result of hydrogen plasma treatment in the back channel region it was remarkably reduced the off current level of 2um channel length TFT.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.79-82
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• 1999

In this paper, it was studied that the performance of OFDM transmission scheme was improved in fading channel by applying TCM, which has advantages of error correction and bandwidth efficiency. Simulation was carried out for two TCM models with different code efficient length. By mapping two models to square 16QAM, the model with the code efficient length of 2 achieved 3㏈ better than the other for the BER of 10$^{-3}$ . In conclusion, if we want to achieve a better performance with TCM in OFDM applications, we should select a TCM with langer code efficient length.