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Evanescent-Mode Analysis of Short-Channel Effects in MOSFETs  

이지영 (이화여자대학교 정보통신학과)
신형순 (이화여자대학교 정보통신학과)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.40, no.10, 2003 , pp. 24-31 More about this Journal
Abstract
Short channel effects (SCE) of bulk MOSFET with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate MOSFET have been analyzed using a evanescent-mode analysis. Analytical equations of the characteristics scaling-length (λ) for three structures have been derived and the accuracy of the calculated λ was verified by comparing to the device simulation result. It is found that the minimum channel length should be larger than 5λ and the depletion thickness of the SSR should be around 30 nm in order to be applicable to 70 nm CMOS technology. High-$textsc{k}$ dielectric shows a limitation in scaling due to the drain-field penetration through the dielectric unless the equivalent SiO2 thickness is very thin.
Keywords
Short-channel effect; CMOS structure; evanescent-mode; characteristics scaling-length;
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