• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.2187-2193
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• 2014

In this paper, we propose a method for suppressing shaft voltage by modifying the rotor shape and the permanent magnets in interior permanent magnet type high voltage motors. The shaft voltage, which adversely affects the bearing by occurring bearing current, is induced by parasitic components and the leakage flux in motor-driven systems as well as inherent linkage flux between main magnetic flux and shaft according to rotor configuration. Thus, shaft voltage should be analyzed and considered under inverter-driven and non-inverter-driven conditions because inherent linkage flux can analyze under non-inverter-driven condition. In this study, we designed re-arrangement magnet and re-structuring rotor to minimize the shaft voltage. In addition, we optimized the proposed models. The shaft voltage suppression effect of the designed model was validated experimentally and by comparative finite element analysis.

• Journal of Power Electronics
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• v.19 no.1
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• pp.296-306
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• 2019

The flyback topology is being widely used in power adapters. The coupling capacitance between primary and secondary windings of a flyback transformer is the main path for common-mode (CM) noise conduction. A Y-cap is usually used to effectively suppress EMI noise. However, this results in problems in space, cost, and the danger of safety leakage current. In this paper, the CM noise behaviors due to the electric field coupling of the transformer windings in a flyback adapter with synchronous rectification are analyzed. Then a scheme with balance winding is proposed to reduce the CM noise with a transformer winding design that eliminates the Y-cap. The planar transformer has advantages in terms of its low profile, good heat dissipation and good stray parameter consistency. Based on the proposed scheme, with the help of a full-wave simulation tool, the key parameter influences of the transformer PCB winding design on CM noise are further analyzed. Finally, a PCB transformer for an 18W adapter is designed and tested to verify the effectiveness of the balance winding scheme.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.1
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• pp.65-72
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• 2004

This paper proposes the novel boost input type resonant AC/DC converter. Since the proposed converter is single stage topology, it controls both of the input power factor and the output voltage at the same time, and resultingly obtains the high power factor of 99% with average current mode pulse width modulation. Especially, to accomplish the zero voltage switching, the resonance between the leakage inductance and external capacitor is used. For the theoretical consideration of the proposed converter, the six operation modes divided by means of current path are discussed, and the resonance characteristics in steady state are analyzed. To verify the validity of the proposed converter, a 200[W]($120[V_AC],\; 출력\; 48[V_DC],\; 4[A]$prototype converter was built and its experimental results were presented in this paper.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.10
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• pp.1927-1934
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• 2016

In this paper, we proposed a I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistor) structure in order to mitigate a radiation-induced leakage current path in an isolation oxide interface of a silicon-based standard n-MOSFET. The proposed I-gate n-MOSFET structure was designed by using a layout modification technology in the standard 0.18um CMOS (Complementary Metal Oxide Semiconductor) process, this structure supplements the structural drawbacks of conventional radiation-tolerant electronic device using layout modification technology such as an ELT (Enclosed Layout Transistor) and a DGA (Dummy Gate-Assisted) n-MOSFET. Thus, in comparison with the conventional structures, it can ensure expandability of a circuit design in a semiconductor-chip fabrication. Also for verification of a radiation-tolerant characteristic, we carried out M&S (Modeling and Simulation) using TCAD 3D (Technology Computer Aided Design 3-dimension) tool. As a results, we had confirmed the radiation-tolerant characteristic of the I-gate n-MOSFET structure.

• Journal of Power Electronics
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• v.16 no.3
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• pp.1226-1235
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• 2016

For wearable health monitoring systems, a fundamental problem is the limited space for storing energy, which can be translated into a short operational life. In this paper, a highly efficient active voltage doubling rectifier with a wide input range for micro-piezoelectric energy harvesting systems is proposed. To obtain a higher output voltage, the Dickson charge pump topology is chosen in this design. By replacing the passive diodes with unbalanced-biased comparator-controlled active counterparts, the proposed rectifier minimizes the voltage losses along the conduction path and solves the reverse leakage problem caused by conventional comparator-controlled active diodes. To improve the rectifier input voltage sensitivity and decrease the minimum operational input voltage, two low power common-gate comparators are introduced in the proposed design. To keep the comparator from oscillating, a positive feedback loop formed by the capacitor C is added to it. Based on the SMIC 0.18-μm standard CMOS process, the proposed rectifier is simulated and implemented. The area of the whole chip is 0.91×0.97 mm², while the rectifier core occupies only 13% of this area. The measured results show that the proposed rectifier can operate properly with input amplitudes ranging from 0.2 to 1.0V and with frequencies ranging from 20 to 3000 Hz. The proposed rectifier can achieve a 92.5% power conversion efficiency (PCE) with input amplitudes equal to 0.6 V at 200 Hz. The voltage conversion efficiency (VCE) is around 93% for input amplitudes greater than 0.3 V and load resistances larger than 20kΩ.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.1
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• pp.76-79
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• 2017

This paper presents the electromagnetic shielding structure for low frequency wireless power transfer system with magnetic induction method using soft magnetic materials. Soft magnetic materials have advantages such as high permeability and low magnetic loss, but have undesirable effect of power loss by eddy current. To overcome this, we proposed the patterned soft magnetic material to suppress the eddy current path. For validity of this paper, we simulated the coil transfer efficiency and the radiated electromagnetic field, and fabricated the proposed structure using 79-permalloy. The measured results shows good agreements with the simulated results and reduction of the radiated electromagnetic field compared to commercial ferrite plate.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1131-1137
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• 2015

Gallium nitride (GaN) is a promising material for next-generation high-power applications due to its wide bandgap, high breakdown field, high electron mobility, and good thermal conductivity. From a structure point of view, the vertical device is more suitable to high-power applications than planar devices because of its area effectiveness. However, it is challenging to obtain a completely upright vertical structure due to inevitable sidewall slope in anisotropic etching of GaN. In this letter, we design and analyze the enhancement-mode n-channel vertical GaN MOSFET with variation of sidewall gate angle by two-dimensional (2D) technology computer-aided design (TCAD) simulations. As the sidewall slope gets closer to right angle, the device performances are improved since a gradual slope provides a leakage current path through the bulk region.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.390-393
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• 2009

We report on a new patterning technique for organic functional materials applicable to organic photovoltacis (OPVs). The unconventioal patterning technique, $O_2$ plsama-etching selectively perfluoro-alkyl fluorosilanes, is used for producing a bulk-heterojunction active layer with poly(3-hexylthiophene) as the electron donor and [6,6]-phenyl-$C_{61}$ butyric acid methyl ester as the electron acceptor. The patterning with reduced leakage path and parasitic capacitance suggests a way for fabrication of OPVs with higher energy conversion efficiency.

• Journal of the Korean Society of Safety
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• v.20 no.3 s.71
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• pp.58-63
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• 2005

In this research, silicone rubber with additions of inorganic filler, alumina trihydrate$(Al(OH)_3\;:\;ATH)$, was aged acceleratedly and cyclically by the salt-fog and heating. The optimum amount of ATH addition to silicone rubber have been investigated by measurements of leakage current in the change of electrical properties and tensile strength, %elongation in mechanical properties and FT-IR, TG, SEM in the change of the chemical properties. With regard to un-aged silicone rubber, as the ATH addition amount increases, conductive path formation time was shortened in the electrical properties and tensile strength was increased, %elongation was decreased. In case of identical ATH addition amount, as cyclic aging increases, surface resistivity, tensile strength and %elongation were decreased. Considering the cyclic aging, the most effective amount of ATH addition was about 90phr.

• Korean Journal of Materials Research
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• v.22 no.8
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• pp.409-415
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• 2012

$TiO_2$ thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature. Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. The effects of deposition pressure on the crystallization and electrical properties of $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphous structure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing deposition pressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of $TiO_2$ films was significantly changed with deposition pressure. $TiO_2$ films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant and dissipation factor of films deposited at 70 mTorr were found to be 100~120 and 0.83 at 1 kHz, respectively. The temperature dependence of the capacitance of $TiO_2$ films showed the properties of class I ceramic capacitors. $TiO_2$ films deposited at 10~30 mTorr showed dielectric breakdown at applied voltage of 7 V. However, the films of 500~300 nm thickness deposited at 50 and 70 mTorr showed a leakage current of ${\sim}10^{-8}{\sim}10^{-9}$ A at 100 V.