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http://dx.doi.org/10.6109/jkiice.2016.20.10.1927

Design of a radiation-tolerant I-gate n-MOSFET structure and analysis of its characteristic  

Lee, Min-woong (Department of Nuclear convergence technology, Korea Atomic Energy Research Institute)
Cho, Seong-ik (Department of Electronic engineering, Chonbuk National University)
Lee, Nam-ho (Department of Nuclear convergence technology, Korea Atomic Energy Research Institute)
Jeong, Sang-hun (Department of Nuclear convergence technology, Korea Atomic Energy Research Institute)
Kim, Sung-mi (Department of Electronic engineering, Chonbuk National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.20, no.10, 2016 , pp. 1927-1934 More about this Journal
Abstract
In this paper, we proposed a I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistor) structure in order to mitigate a radiation-induced leakage current path in an isolation oxide interface of a silicon-based standard n-MOSFET. The proposed I-gate n-MOSFET structure was designed by using a layout modification technology in the standard 0.18um CMOS (Complementary Metal Oxide Semiconductor) process, this structure supplements the structural drawbacks of conventional radiation-tolerant electronic device using layout modification technology such as an ELT (Enclosed Layout Transistor) and a DGA (Dummy Gate-Assisted) n-MOSFET. Thus, in comparison with the conventional structures, it can ensure expandability of a circuit design in a semiconductor-chip fabrication. Also for verification of a radiation-tolerant characteristic, we carried out M&S (Modeling and Simulation) using TCAD 3D (Technology Computer Aided Design 3-dimension) tool. As a results, we had confirmed the radiation-tolerant characteristic of the I-gate n-MOSFET structure.
Keywords
Radiation-tolerant; Layout modification technology; I-gate n-MOSFET; Radiation-induced; Leakage current path;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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