• Proceedings of the Korean Institute of Building Construction Conference
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• 2007.04a
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• pp.141-145
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• 2007

The part in the structure that is most affected by changes of external temperature is the protective concrete layer that protects a waterproofing layer. Also, the waterproofing layer that is situated under or on the back of such a protective concrete layer is affected by temperature and the behavior of the protective concrete layer under the condition of consolidation or close adhesion. In particular, in many cases, the damage is serious mainly around the projection (such as a parapet), crack, and joint (expansion joint). However, there is no proper way of examining again the non-exposed waterproofing layer once it has been constructed. Therefore, there is an assessment only on the physical property of materials and the capability of the layer in construction, and there is no actual assessment in consideration of its environmental condition or the condition of the use of buildings after construction. Therefore, in order to create more pleasant buildings and to enhance the durability of structures, this study conducts research into the change of capability of non-exposed waterproofing material after the application of a static load and moving load on the waterproofing layer situated under or on the back of protective concrete.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.1145-1148
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• 1998

New capacitance modeling and transient analysis for multi-layer interconnects with shielding effect are presented. The upper layer capacitances with under-layer shielding lines are represented by introducing a filling factor η which can be defined as the ratio of upper-layer line length to the total under-layer line width. The upper-layer effective self capacitances considering two extreme cases which the underlayer metals are assumed as a ground or as a Vdd are modeled. The signal transient analysis with shielding effect model is performed.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.53-56
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• 2002

We have developed a Monte Carlo (MC) simulator for electron beam lithography in multi-layer resists and multi-layer substrates in order to fabricate and develop high-speed PHEMT devices for millimeter- wave applications. For the deposited energy calculation to multi-layer resists by electron beam in MC simulation, we modeled newly for multi-layer resists and heterogeneous multi-layer substrates. Using this model, we simulated T-gate or r-gate fabrication process in PHEMT device and showed our results with SEM observations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.853-858
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• 2008

The structure of organic light-emitting diodes(OLEDs) with typical heterostructure consists of anode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode. 4,4bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl(NPB) used as a hole transport layer and 4'4-bis(2,2'-diphenyl vinyl)-1,1'-biphenyl(DPVBi) used as a blue light emitting layer were graded-mixed at selected ratio. Interface at heterojunction between the hole transport layer and the elecrtron transport layer restricts carrier's transfer. Mixing of the hole transport layer and the emitting layer reduces abrupt interface between the hole transport layer and the electron transport layer. The operating voltage of OLED devices with graded mixed-layer structure is 2.8 V at 1 $cd/m^2$ which is significantly lower than that of OLED device with typical heterostructure. The luminance of OLED devices with graded mixed-layer structure is 21,000 $cd/m^2$ , which is much higher than that of OLED device with typical heterostructure. This indicates that the graded mixed-layer enhances the movement of carriers by reducing the discontinuity of highest occupied molecular orbital(HOMO) of the interface between hole transport layer and emitting layer.

• Journal of Korea Foundry Society
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• v.18 no.6
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• pp.593-603
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• 1998

Commercial ductile iron was coated with titanium and aluminum powders by low pressure plasma spraying and then irradiated with a $CO_2$ laser to produce anti-corrosive TiC composite layer. TiC carbides were precipitated homogeneously in a laser alloyed layer by in-situ reaction between carbon existed in the base metal and titanium with thermal sprayed coating. The formation of gas pores and brittle limited mixing zone with ledeburite microstructure in TiC composite layer were surpressed by the complementary alloying of aluminum. The hardness of TiC composite layer obtained by addition of titanium and aluminum was between 600 and 660 Hv, which was three times as high as the hardness of ferritic ductile iron. From the results of isothermal oxidation at 1123k for 24 hours in air, high temperature oxidation resistance of the TiC composite layer with aluminum was improved and doubled when compared with the TiC composite layer without aluminum.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.855-860
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• 2001

Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin film were fabricated by atomic layer-by -layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.t.

• Journal of Astronomy and Space Sciences
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• v.41 no.1
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• pp.17-23
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• 2024

The safety of electronic components used in aerospace systems against cosmic rays is one of the most important requirements in their design and construction (especially satellites). In this work, by calculating the dose caused by proton beams in geostationary Earth orbit (GEO) orbit using the MCNPX Monte Carlo code and the MULLASSIS code, the effect of different structures in the protection of cosmic rays has been evaluated. A multi-layer radiation shield composed of aluminum, water and polyethylene was designed and its performance was compared with shielding made of aluminum alone. The results show that the absorbed dose by the simulated protective layers has increased by 35.3% and 44.1% for two-layer (aluminum, polyethylene) and three-layer (aluminum, water, polyethylene) protection respectively, and it is effective in the protection of electronic components. In addition to that, by replacing the multi-layer shield instead of the conventional aluminum shield, the mass reduction percentage will be 38.88 and 39.69, respectively, for the two-layer and three-layer shield compared to the aluminum shield.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.390-396
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• 2003

As the design rule of device continued to shrink, the contact resistance in small contact size became important. Although the conventional TiN/Ti structure as a ohmic layer has been widely used, we propose a new TiN/Co film structure. We characterized a contact resistance by using a chain pattern and a KELVIN pattern, and a leakage current determined by current-voltage measurements. Moreover, the microstructure of TiN/ Ti/ silicide/n$\^$+/ contact was investigated by a cross-sectional transmission electron microscope (TEM). The contact resistance by the Co ohmic layer showed the decrease of 26 % compared to that of a Ti ohmic layer in the chain resistance, and 50 ％ in KELYIN resistance, respectively. A Co ohmic layer shows enough ohmic behaviors comparable to the Ti ohmic layer, while higher leakage currents in wide area pattern than Ti ohmic layer. We confirmed that an uniform silicide thickness and a good interface roughness were able to be achieved in a CoSi$_2$ Process formed on a n$\^$+/ silicon junction from TEM images.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.405-407
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• 2004

We have optimized the low temperature growth of microcrystalline silicon at 80$^{\circ}C$. This material has been used to fabricate bottom gate ${\mu}c$-Si:H TFTs by using a layer-by-layer nitrogenation process. By using this process the amorphous incubation layer can be converted into silicon nitride and leads to an increase in field effect mobility of the TFT

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.160-163
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• 2002

Micro via hole Fabrication is studied by means of minimizing method to circuit size as many electric products developed to portable and minimize. Most of currently micro via hole fabrication using laser is that fabricate insulator layer using CO2 Laser after Cu layer by etching, or fabricate insulator layer using IR after trepanning Cu by UV. In this paper, it was performed that a metal layer and insulator layer were worked upon only one UV laser, and increase to processing speed by experiment.