• 제목/요약/키워드: Layer-by-layer

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비노출 방수층에 작용하는 정하중과 동하중 작용 후의 방수층 물성변화에 관한 연구 (A Study on the Change of Physical Capability of Waterproofing Layer after the Application of Static Load and Moving Load to a Non-Exposed Type Waterproofing Layer)

  • 선윤숙;김진성;오상근
    • 한국건축시공학회:학술대회논문집
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    • 한국건축시공학회 2007년도 춘계학술논문 발표대회
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    • pp.141-145
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    • 2007
  • The part in the structure that is most affected by changes of external temperature is the protective concrete layer that protects a waterproofing layer. Also, the waterproofing layer that is situated under or on the back of such a protective concrete layer is affected by temperature and the behavior of the protective concrete layer under the condition of consolidation or close adhesion. In particular, in many cases, the damage is serious mainly around the projection (such as a parapet), crack, and joint (expansion joint). However, there is no proper way of examining again the non-exposed waterproofing layer once it has been constructed. Therefore, there is an assessment only on the physical property of materials and the capability of the layer in construction, and there is no actual assessment in consideration of its environmental condition or the condition of the use of buildings after construction. Therefore, in order to create more pleasant buildings and to enhance the durability of structures, this study conducts research into the change of capability of non-exposed waterproofing material after the application of a static load and moving load on the waterproofing layer situated under or on the back of protective concrete.

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다층 배선에서 차폐효과 모델 및 스위칭에 미치는 영향 (Shielding effect model and Signal Switching in the multi-layer interconnects)

  • 진우진;어영선
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 추계종합학술대회 논문집
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    • pp.1145-1148
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    • 1998
  • New capacitance modeling and transient analysis for multi-layer interconnects with shielding effect are presented. The upper layer capacitances with under-layer shielding lines are represented by introducing a filling factor η which can be defined as the ratio of upper-layer line length to the total under-layer line width. The upper-layer effective self capacitances considering two extreme cases which the underlayer metals are assumed as a ground or as a Vdd are modeled. The signal transient analysis with shielding effect model is performed.

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다층 리지스트 다층 기판 구조에서의 전자빔 리소그래피 공정을 위한 몬테카를로 시뮬레이터의 개발 (Development of a Monte Carlo Simulator for Electron Beam Lithography in Multi-Layer Resists and Multi-Layer Substrates)

  • 손명식;이진구;황호정
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.53-56
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    • 2002
  • We have developed a Monte Carlo (MC) simulator for electron beam lithography in multi-layer resists and multi-layer substrates in order to fabricate and develop high-speed PHEMT devices for millimeter- wave applications. For the deposited energy calculation to multi-layer resists by electron beam in MC simulation, we modeled newly for multi-layer resists and heterogeneous multi-layer substrates. Using this model, we simulated T-gate or r-gate fabrication process in PHEMT device and showed our results with SEM observations.

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HTL:EML(DPVBi:NPB)층의 조성비 변화에 따른 청색 유기 발광 소자 개발 (Development of Blue Organic Light-emitting Diodes(OLEDs) Due to Change in Mixed Ratio of HTL:EML(DPVBi:NPB) Layers)

  • 이태성;이병욱;홍진수;김창교
    • 한국전기전자재료학회논문지
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    • 제21권9호
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    • pp.853-858
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    • 2008
  • The structure of organic light-emitting diodes(OLEDs) with typical heterostructure consists of anode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode. 4,4bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl(NPB) used as a hole transport layer and 4'4-bis(2,2'-diphenyl vinyl)-1,1'-biphenyl(DPVBi) used as a blue light emitting layer were graded-mixed at selected ratio. Interface at heterojunction between the hole transport layer and the elecrtron transport layer restricts carrier's transfer. Mixing of the hole transport layer and the emitting layer reduces abrupt interface between the hole transport layer and the electron transport layer. The operating voltage of OLED devices with graded mixed-layer structure is 2.8 V at 1 $cd/m^2$ which is significantly lower than that of OLED device with typical heterostructure. The luminance of OLED devices with graded mixed-layer structure is 21,000 $cd/m^2$ , which is much higher than that of OLED device with typical heterostructure. This indicates that the graded mixed-layer enhances the movement of carriers by reducing the discontinuity of highest occupied molecular orbital(HOMO) of the interface between hole transport layer and emitting layer.

레이저 처리에 의한 구상흑연주철의 TiC 복합화에 관한 연구 (Formation of TiC Composite Layer on Ductile Iron by Laser Surface Modification)

  • 김우열;박흥일
    • 한국주조공학회지
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    • 제18권6호
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    • pp.593-603
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    • 1998
  • Commercial ductile iron was coated with titanium and aluminum powders by low pressure plasma spraying and then irradiated with a $CO_2$ laser to produce anti-corrosive TiC composite layer. TiC carbides were precipitated homogeneously in a laser alloyed layer by in-situ reaction between carbon existed in the base metal and titanium with thermal sprayed coating. The formation of gas pores and brittle limited mixing zone with ledeburite microstructure in TiC composite layer were surpressed by the complementary alloying of aluminum. The hardness of TiC composite layer obtained by addition of titanium and aluminum was between 600 and 660 Hv, which was three times as high as the hardness of ferritic ductile iron. From the results of isothermal oxidation at 1123k for 24 hours in air, high temperature oxidation resistance of the TiC composite layer with aluminum was improved and doubled when compared with the TiC composite layer without aluminum.

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순차 증착에 의한 BSCCO 박막의 에피택셜 성장 (Epitaxial Growth of BSCCO Films by Leyer-by-Layer Deposition)

  • 안준호;박용필;김정호
    • 한국전기전자재료학회논문지
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    • 제14권10호
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    • pp.855-860
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    • 2001
  • Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin film were fabricated by atomic layer-by -layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.t.

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Simulation and Design of Optimized Three-Layer Radiation Shielding to Protect Electronic Boards of Satellite Revolving in Geostationary Earth Orbit (GEO) Orbit against Proton Beams

  • Ali Alizadeh;Gohar Rastegarzadeh
    • Journal of Astronomy and Space Sciences
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    • 제41권1호
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    • pp.17-23
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    • 2024
  • The safety of electronic components used in aerospace systems against cosmic rays is one of the most important requirements in their design and construction (especially satellites). In this work, by calculating the dose caused by proton beams in geostationary Earth orbit (GEO) orbit using the MCNPX Monte Carlo code and the MULLASSIS code, the effect of different structures in the protection of cosmic rays has been evaluated. A multi-layer radiation shield composed of aluminum, water and polyethylene was designed and its performance was compared with shielding made of aluminum alone. The results show that the absorbed dose by the simulated protective layers has increased by 35.3% and 44.1% for two-layer (aluminum, polyethylene) and three-layer (aluminum, water, polyethylene) protection respectively, and it is effective in the protection of electronic components. In addition to that, by replacing the multi-layer shield instead of the conventional aluminum shield, the mass reduction percentage will be 38.88 and 39.69, respectively, for the two-layer and three-layer shield compared to the aluminum shield.

코발트 오믹층의 적용에 의한 콘택저항 변화 (Effects of Cobalt Ohmic Layer on Contact Resistance)

  • 정성희;송오성
    • 한국전기전자재료학회논문지
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    • 제16권5호
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    • pp.390-396
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    • 2003
  • As the design rule of device continued to shrink, the contact resistance in small contact size became important. Although the conventional TiN/Ti structure as a ohmic layer has been widely used, we propose a new TiN/Co film structure. We characterized a contact resistance by using a chain pattern and a KELVIN pattern, and a leakage current determined by current-voltage measurements. Moreover, the microstructure of TiN/ Ti/ silicide/n$\^$+/ contact was investigated by a cross-sectional transmission electron microscope (TEM). The contact resistance by the Co ohmic layer showed the decrease of 26 % compared to that of a Ti ohmic layer in the chain resistance, and 50 % in KELYIN resistance, respectively. A Co ohmic layer shows enough ohmic behaviors comparable to the Ti ohmic layer, while higher leakage currents in wide area pattern than Ti ohmic layer. We confirmed that an uniform silicide thickness and a good interface roughness were able to be achieved in a CoSi$_2$ Process formed on a n$\^$+/ silicon junction from TEM images.

침엽수 미표백 크라프트펄프와 재생고지를 이용한 단층지와 이층지의 물성 연구 (Properties of Single-and Two-layered Handsheets Formed with Sw-UKP and OCC)

  • 박용;이학래
    • 펄프종이기술
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    • 제30권2호
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    • pp.5-12
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    • 1998
  • Exploitation of the papermaking technology to reduce the strength loss that accompanies when using recycled papers as raw materials for papermaking is one of the most important issues imposed upon today's paper industry. Multi-layer sheet forming technology has been suggested as a way that provides some answers to this issue. In this study strength properties of single- and two-layer handsheets formed with recycled fiber and unbleached softwood kraft pulp have been examined to quantify the benefits when using two-layer sheet forming technology rather than a conventional single layer sheet forming precess. Single- and two-layer handsheets were made from 50% of OCC and 50% of Sw-UKP and their strength properties were evaluated. Also the strength properties made from Sw-UKP and OCC sheets were determined. A multihead, which can be attached on the top of hand- sheet former, was used to form two-layer sheets. Maximum strength properties could be obtained in the freeness range of 500∼300mL CSF for Sw-UKP Most of the strength properties was reduced by 30∼35% when 50% OCC was blended with UKP. Decrease of strength properties, however, could be reduced by employing a two-layer sheet forming method. Creator strengths could be obtained when UKP was positioned at the top layer of two layered sheets indicating greater UKP fines retention due to the filtration effect of the OCC layer formed prior to UKP layer contributed the strength improvement. Two-layer sheet showed lower Scott internal bond strength than single layer sheet. By incorporating some of UKP fibers into OCC layer this reduction could be reduced.

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Layer-by-layer nitrogenation of microcrystalline silicon for TFT applications

  • Bu, I.;Milne, W.I.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.405-407
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    • 2004
  • We have optimized the low temperature growth of microcrystalline silicon at 80$^{\circ}C$. This material has been used to fabricate bottom gate ${\mu}c$-Si:H TFTs by using a layer-by-layer nitrogenation process. By using this process the amorphous incubation layer can be converted into silicon nitride and leads to an increase in field effect mobility of the TFT

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