Effects of Cobalt Ohmic Layer on Contact Resistance |
정성희
(서울시립대학교 신소재공학과)
송오성 (서울시립대학교 신소재공학과) |
1 |
Ti/Co bilayers in salicide technology: electrical evaluation
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DOI ScienceOn |
2 |
<TEX>$n^{+}$</TEX>-GaN/AIGaN/GaN HFET 제작을 위한 오믹접촉에 관한 연구
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과학기술학회마을 |
3 |
Effects of Ni silicidation by BF₂implantation into thin polycrystalline-Si films on Si substrates
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DOI |
4 |
Self-aligned CoSi₂for 0.18㎛ and below
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DOI ScienceOn |
5 |
Self-aligned Ti and Co silicides for high performance sub-0.18㎛ CMOS technologies
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DOI ScienceOn |
6 |
SADS(Silicide As Diffusion Source) 법으로 형성한 코발트 폴리사이드 게이트의 C-V 특성
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과학기술학회마을 |
7 |
Solid solubility of As in CoSi₂and redistribution at the CoSi₂/Si interface
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DOI |
8 |
Effects of arsenic doping on chemical vapor deposition of titanium silicide
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DOI |
9 |
Integrated barrier/plug fill schemes for high aspect ratio GB DRAM contact metallization
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DOI ScienceOn |
10 |
2단계 RTP 방법에 의한 n+P 접합 티타늄 실리사이드 특성연구
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과학기술학회마을 |
11 |
Ultrathin silicide formation for ULSI devices
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DOI ScienceOn |
12 |
A model for specific contact resistance applicable for titanium silicide-silicon contacts
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DOI ScienceOn |
13 |
Low parasitic resistance contacts for scaled ULSI devices
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DOI ScienceOn |