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http://dx.doi.org/10.4313/JKEM.2003.16.5.390

Effects of Cobalt Ohmic Layer on Contact Resistance  

정성희 (서울시립대학교 신소재공학과)
송오성 (서울시립대학교 신소재공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.5, 2003 , pp. 390-396 More about this Journal
Abstract
As the design rule of device continued to shrink, the contact resistance in small contact size became important. Although the conventional TiN/Ti structure as a ohmic layer has been widely used, we propose a new TiN/Co film structure. We characterized a contact resistance by using a chain pattern and a KELVIN pattern, and a leakage current determined by current-voltage measurements. Moreover, the microstructure of TiN/ Ti/ silicide/n$\^$+/ contact was investigated by a cross-sectional transmission electron microscope (TEM). The contact resistance by the Co ohmic layer showed the decrease of 26 % compared to that of a Ti ohmic layer in the chain resistance, and 50 ％ in KELYIN resistance, respectively. A Co ohmic layer shows enough ohmic behaviors comparable to the Ti ohmic layer, while higher leakage currents in wide area pattern than Ti ohmic layer. We confirmed that an uniform silicide thickness and a good interface roughness were able to be achieved in a CoSi$_2$ Process formed on a n$\^$+/ silicon junction from TEM images.
Keywords
Cobalt disilicide; Ti interlayer; silicide; Co/Ti bilayer; Co ohmic layer; Ti ohmic layer;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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