• 인포메이션 디스플레이
• /
• 제6권5호
• /
• pp.17-23
• /
• 2005

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제36회 동계학술대회 초록집
• /
• pp.284.1-284.1
• /
• 2009

• 인포메이션 디스플레이
• /
• 제10권2호
• /
• pp.30-39
• /
• 2009

• 인포메이션 디스플레이
• /
• 제20권3호
• /
• pp.39-47
• /
• 2019

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.40-40
• /
• 2009

The electrical characteristic of the conventional self-aligned polycrystalline silicon (poly-Si) TFTs are known to present several undesired effects such as large leakage current, kink effect and hot-carrier effects. In this paper, LTPS TFTs with different GOLDD length were fabricated and investigated the effect of the GOLDD. GOLDD length of 1, 1.5 and $2{\mu}m$ were used, while the thickness of the gate dielectrics($SiN_x/SiO_2$) was fixed at 65nm(40nm/25nm). The electrical characteristics show that the kink effect is reduced at the LTPS TFTs, and degradation from the hot-carrier effect was also decreased by increasing GOLDD length.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.665-668
• /
• 2006

Sodium is a serious contamination in LTPS TFT process. It causes the abnormal characteristics of TFT in operation. Contaminated areas can be seen in SEM images, but EDX measurements do not have adequate sensitivity to confirm the presence of superficial sodium residues. We employed SIMS as a fast analysis method to map the non-uniform distribution of sodium on the surface. SIMS can also indicate the thickness of the contamination.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2005년도 추계종합학술대회
• /
• pp.747-750
• /
• 2005

In this paper, we propose a new level shifter circuit for reducing power consumption. The concept of the proposed level shifter is to use capacitive coupling effect to reduce short circuit current. The power consumption of the proposed level shifter is reduced up to 50%, compared to the conventional level shifter. Especially the proposed level shifter circuit works well with low temperature poly-Si (LTPS) TFTs. It can operate on low input voltage even with low-mobility, high and widely-varying threshold voltage of LTPS TFT.

• 대한전자공학회논문지SD
• /
• 제43권2호
• /
• pp.76-83
• /
• 2006

본 논문에서는 새로운 레벨쉬프터 회로의 구조를 제안한다. 제안된 구조는 높은 입력전압을 필요로 하는 회로에 낮은 입력 전압을 주어도 충분히 동작할 수 있는 능력을 가진다. 기존의 레벨쉬프터 회로에 비해 동작 속도는 비슷하고 전력소모와 회로 면적에 대해서 장점을 갖는다. 마지막으로 HSPICE 시뮬레이션 과정을 통해 제안된 회로의 장점을 실험적으로 증명하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.409-412
• /
• 2006

A high data accuracy and low power consumption driving method and output stage of the source driver are proposed for the LTPS TFT-LCD in mobile applications. The proposed driving method is insensitive to the variations of the electrical characteristics of TFTs, which enables the output errors of the source driver are under 1/2 LSB in all gray levels. In addition, the power consumption of the driver with the method is decreased to 9.9mW which is 55.9% of that of the conventional source driver by reducing unnecessary charge waste.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.200-200
• /
• 2010

이 논문에서는 field-effect mobility를 향상시키기 위해 triple-layer (SiNx/SiO2/SiOxNy stack 구조)를 gate dielectric material 로 LTPS TFTs에 적용하였다. 이는 플라즈마 처리 기법과 적층구조의 효과적인 in-situ 공정을 이용하여 interface trap과 mobile charge를 낮추어 높은 이동도의 결과를 생각하고 실험하였다. 실험은 SiO2 gatedielectric과 triple-gate dielectric의 C-V curve를 1 MHz의 주파수에서 측정하였다. 또한 Transfer characteristics를 single SiO2 gatedielectric과 triple-gate dielectric of SiNx/SiO2/SiOxNy를 STA 장비를 이용해 측정하였다. 위의 측정을 통해 threshold voltage, mobility, subtheshold swing, driving current, ON/OFF current ratio를 비교 분석하였다.