• Information Display
• /
• v.6 no.5
• /
• pp.17-23
• /
• 2005

• Proceedings of the Korean Vacuum Society Conference
• /
• 2009.02a
• /
• pp.284.1-284.1
• /
• 2009

• Information Display
• /
• v.10 no.2
• /
• pp.30-39
• /
• 2009

• Information Display
• /
• v.20 no.3
• /
• pp.39-47
• /
• 2019

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.40-40
• /
• 2009

The electrical characteristic of the conventional self-aligned polycrystalline silicon (poly-Si) TFTs are known to present several undesired effects such as large leakage current, kink effect and hot-carrier effects. In this paper, LTPS TFTs with different GOLDD length were fabricated and investigated the effect of the GOLDD. GOLDD length of 1, 1.5 and $2{\mu}m$ were used, while the thickness of the gate dielectrics($SiN_x/SiO_2$) was fixed at 65nm(40nm/25nm). The electrical characteristics show that the kink effect is reduced at the LTPS TFTs, and degradation from the hot-carrier effect was also decreased by increasing GOLDD length.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.665-668
• /
• 2006

Sodium is a serious contamination in LTPS TFT process. It causes the abnormal characteristics of TFT in operation. Contaminated areas can be seen in SEM images, but EDX measurements do not have adequate sensitivity to confirm the presence of superficial sodium residues. We employed SIMS as a fast analysis method to map the non-uniform distribution of sodium on the surface. SIMS can also indicate the thickness of the contamination.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.747-750
• /
• 2005

In this paper, we propose a new level shifter circuit for reducing power consumption. The concept of the proposed level shifter is to use capacitive coupling effect to reduce short circuit current. The power consumption of the proposed level shifter is reduced up to 50%, compared to the conventional level shifter. Especially the proposed level shifter circuit works well with low temperature poly-Si (LTPS) TFTs. It can operate on low input voltage even with low-mobility, high and widely-varying threshold voltage of LTPS TFT.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.2 s.344
• /
• pp.76-83
• /
• 2006

We proposed a new level shifter circuit architecture. The prposed circuit can provide high output voltage upto 15V by taking 3.3V logic signal compared to the conventional level shifter. The unposed circuit has compatible speed, low power consumption and chip size. We have confirmed the operation by conducting HSPICE simulation.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.409-412
• /
• 2006

A high data accuracy and low power consumption driving method and output stage of the source driver are proposed for the LTPS TFT-LCD in mobile applications. The proposed driving method is insensitive to the variations of the electrical characteristics of TFTs, which enables the output errors of the source driver are under 1/2 LSB in all gray levels. In addition, the power consumption of the driver with the method is decreased to 9.9mW which is 55.9% of that of the conventional source driver by reducing unnecessary charge waste.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.200-200
• /
• 2010

이 논문에서는 field-effect mobility를 향상시키기 위해 triple-layer (SiNx/SiO2/SiOxNy stack 구조)를 gate dielectric material 로 LTPS TFTs에 적용하였다. 이는 플라즈마 처리 기법과 적층구조의 효과적인 in-situ 공정을 이용하여 interface trap과 mobile charge를 낮추어 높은 이동도의 결과를 생각하고 실험하였다. 실험은 SiO2 gatedielectric과 triple-gate dielectric의 C-V curve를 1 MHz의 주파수에서 측정하였다. 또한 Transfer characteristics를 single SiO2 gatedielectric과 triple-gate dielectric of SiNx/SiO2/SiOxNy를 STA 장비를 이용해 측정하였다. 위의 측정을 통해 threshold voltage, mobility, subtheshold swing, driving current, ON/OFF current ratio를 비교 분석하였다.