• Korean Journal of Materials Research
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• v.17 no.9
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.

• Journal of the Optical Society of Korea
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• v.20 no.6
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• pp.794-798
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• 2016

A polymer-stabilized vertical alignment (PS-VA) mode with fishbone-shaped pixel electrode structure is mainly used in large-sized liquid crystal displays (LCDs) owing to its advantages such as wide viewing angle, good transmittance and fast response time. One drawback of this mode is a main bone electrode, which crosses in the center of a pixel. It causes the transmittance to decrease badly because LCs cannot be reoriented in this region, and thus, it is particularly unfavorable in an ultra-high-definition LCD. Here, we propose an innovative structure with the main bone electrode relocated to the edge area in a pixel, and investigate how this reverse directed fishbone-shaped pixel electrode structure affects electro-optic characteristics. The proposed structure shows enhanced electro-optic performance, such as the higher transmittance and the faster response time than the conventional VA mode with fishbone-shaped pixel electrode structure.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.1
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• pp.181-187
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• 2016

Silica is an essential material in the electronics industries of LCDs and OLEDs, which particularly require high purity. This study attempted to find the optimal design of a magnetic separator for silica sand containing iron compounds using CFD simulation. Three designs of magnetic separation were prepared and their efficiency was examined. As a result of the evaluation, the sufficient contact of particulate silica with the surface of magnetic emitters improved the magnetic separation effects. In addition, the loss of $SiO_2$ and the removal rate of $Fe_2O_3$ depended strongly on the particle size, flow rate and magnetic flux density. In addition, magnetic separation is quite effective for a particle size of $10{\mu}m$ with a 0.2 m/s flow rate.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.4
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• pp.1803-1811
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• 2011

We have analyzed the electrical defect detection mechanism using low energy microcolumn on the TFT substrate for TFT-LCD. In this study, we have acquired the SEM images of the various pixel defects for 7-inch TFT substrate by scanning of low energy electron beam in the high vacuum chamber. Futhermore, we have interpreted the defect detection mechanism through the correlations between the SEM images and electrical behaviors of the defective pixels. As a result, we obtained consistent results as the follows. We can confirm that the SEM images using low energy electron beam are significantly affected by the space charge effect.

• Resources Recycling
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• v.24 no.1
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• pp.58-65
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• 2015

Although Korea is a top market sharing and world leading producer and developer of flat panel display devices, relevant recycling technology is not up to her prestigious status. Besides, most of the waste glass arising from flat panel displays is currently land-filled. The present paper mainly reviews on development of recycling systems for waste TFT-LCD glass from end-of-life LCD TVs and monitors and TFT-LCD process waste of crushed glass particles with target end uses of raw material for high strength concrete pile and glass fibers, respectively. Waste LCD glass was recycled to fabricate ingredients for high strength concrete piles with enhanced physical properties and spherical foam products. The waste LCD glass recycling technology is already developed to fabricate long and short fibers at commercial level. In view of these, future R & D on waste LCD glass materials is to be directed toward implementation of commercial materials recycling system therefrom.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.4
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• pp.650-656
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• 2018

The TFT-LCD industry is a kind of large-scale industrial Giant Microelectronics device industry and has a similar semiconductor process technology. Wet etching forms a relatively large proportion of the entire TFT process, but the number of published research papers on this topic is limited. The main reason for this is that the components of the etchant, in which the reaction takes place, are confidential and rarely publicized. Aluminum (Al) and copper (Cu), which have been used in recent years for the manufacture of large area LCDs, are very difficult materials to process using wet etching. Cu, a low-resistance material, can only be used in the wet etching process, and is used as a substitute for Al due to its high speed etching, low failure rate, and low power consumption. Further, the abnormal reaction of hydrogen peroxide ($H_2O_2$), which is used as an etching solution, requires additional piping and electrical safety devices. This paper proposes a method of minimizing the damage to the plant in the case of adverse reactions, though it cannot limit the adverse reaction of hydrogen peroxide. In recent years, there have been many cases in which aluminum etching equipment has been changed to copper. This paper presents a countermeasure against abnormal reactions by implementing safety PLC with a high safety grade.

• Korean Chemical Engineering Research
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• v.47 no.2
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• pp.150-156
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• 2009

Plasma Display Panels(PDPs) require to have improved luminous efficiency, low manufacturing cost, and high image quality to compete with other flat display devices such as Liquid Crystal Displays(LCDs) and organic light-emitting diodes(OLEDs). In addition, the diversity of product line-up may be needed for high market share. In this paper, the optical characteristics of typical green phosphor for PDP application are reviewed and the problem-based solution will be proposed. We also shortly describe the principle of 3D-PDPs which are promising. Then, the requirement of green phosphor for 3D-PDP application is summarized and research achievement, as of now, is described. The typical problems of $Zn_2SiO_4:Mn$ phosphor, which is the most well-known, are the negatively charged surface property and the long decay time, which leads to unstable discharge in green cell and afterimage. These problems were solved by coating the phosphor surface with metallic oxide. It was found that $Al_2O_3$ would be the best material for $Zn_2SiO_4:Mn$ phosphor. It gives longevity as well as low operating voltage due to the charging effect in green cells. Also, new phosphors, $(Y,\;Gd)Al_3(BO_3)_4:Tb$ and $(Mg,\;Zn)Al_2O_4:Mn$ phosphor are proposed for increasing the luminance and reducing the decay time, which are capable to apply for 3D-PDP application.

• Korean Journal of Optics and Photonics
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• v.28 no.6
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• pp.356-360
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• 2017

Indium tin oxide (ITO) provides high electrical conductivity and transparency at visible and near-IR wavelengths. ITO is widely used as a transparent electrode for the fabrication of LCDs, OLEDs, and many kinds of optical applications. It is widely employed for electrodes in various electric and display sectors because of its transparency in the visible range and high conductivity. Therefore, one issue is removing a specific area of a layer of material such as ITO or metallic film on a substrate, without affecting the properties of the substrate. ITO-on-glass removal using a laser is friendlier to the environment than traditional methods. In this study, ablation of ITO film on glass using a femtosecond-laser micromachining system (wavelength 1026 nm, pulse duration 150 fs) and a nanosecond-laser micromachining system (wavelength 1027 nm, pulse duration 5 ns) are described, compared, and analyzed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.4
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• pp.575-581
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• 2020

A colorless antistatic agent was prepared for use in antistatic films for liquid crystal displays (LCDs) requiring low surface resistance and high transmittance. Among various lithium-fluoro compounds and quaternary ammonium salts, antistatic materials were selected based on their electrical conductivity, and antistatic agents were prepared to measure the surface resistance. As a result, the material with high conductivity showed a relatively low surface resistance, i.e., relatively good antistatic performance. Based on the antistatic materials selected, the formulation ratio for producing the best antistatic agent was established through the experimental design method and the effects of each factor were analyzed. The higher the use of lithium- fluoro compounds as antistatic materials, the higher the ratio of oligomer use with multi-functional groups, and the smaller the surface resistance. The quaternary ammonium salts increased the antistatic performance of the lithium-fluoro compounds, but the effects of the amount used were not relatively large. After manufacturing the antistatic PET film, the properties of the antistatic film showed low surface resistance values (<10⁹ Ω/sq.), high permeability (>92%), low haze (<0.5%), and high whiteness (L^⁎>95). In addition, the antistatic film reliability was found to be excellent by showing a stable surface-resistance change rate of less than 10%, even under high temperature and high humidity conditions.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.160-165
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• 2000

We have investigated the electrical and diffusion barrier properties of MgO produced on the surface of Cu (Mg) alloy. Also the diffusion barrier property of the interfacial MgO between Cu alloy and $SiO_2$ has been examined. The results show that the $150\;{\AA}$-MgO layer on the surface remains stable up to $700^{\circ}C$, preventing the interdiffusion of C Cu and Si in Si/MgO/Cu(Mg) structure. It also has the breakdown voltage of 4.5V and leakage current density of $10^{-7}A/\textrm{cm}^2/$. In addition, the combined structure of $Si_3N4(100{\AA})/MgO(100{\AA})$ increases the breakdown voltage up to lOV and reduces the leakage current density to $8{\tiems}10^{-7}A/\textrm{cm}^2$. Furthermore, the interfacial MgO formed by the chemical reac­t tion of Mg and $SiO_2$ reduces the diffusion of copper into $SiO_2$ substrate. Consequently, Cu(Mg) alloy can be applied as a g gate electrode in TFT /LCDs, reducing the process steps.