• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.202-210
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• 2001

Spin dependent tunneling (SDT) junction devices of Ta/NiFe/Ta/NiFe/FeMn/NiFe/AlOx/CoFe/NiFe/Al with in-situ naturally oxidized Al barrier were fabricated using ion beam deposition and dc sputtering in UHV chamber of 10$^{-9}$ Torr. The maximum tunneling magnetoresistance (TMR) and the product resistance by junction (R$_{j}$ A) are 16-17% and 50-60 $\Omega$${\mu}{\textrm}{m}$$^2$, respectively. The values of TMR and (R$_{j}$ A) with field annealing were slightly increased. The TMR and (R$_{j}$ A) dependence versus the junction area size was observed. These results were explained by using sheet resistance effect of bottom electrode and spin channel effects.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.364-367
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• 2010

The dual ion-implantation trench edge termination techniques were investigated and optimized using a two-dimensional device simulator. By trenching the field ring site which would be dual implanted, a better blocking capability can be obtained. The results show that the p-n junction with dual implanted junction field-ring can accomplish nearly 20% increase of breakdown voltage in comparison with the conventional trench field-rings. The fabrication is relatively difficult. But the trench etched field ring with dual ion-implantation is surpassed for breakdown voltage and consume same area and extensive device simulations as well as qualitative analysis confirm these conclusions.

• Journal of IKEEE
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• v.19 no.2
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• pp.232-236
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• 2015

Super-junction trench MOSFET (SJ TMOSFET) devices are well known for lower specific on-resistance and high breakdown voltage (BV). For a conventional power MOSFET (metal-oxide semiconductor field-effect transistor) such as trench double-diffused MOSFET (TDMOSFET), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a SJ TMOSFET structure is suggested, but sensing the temperature distribution of TMOSFET is very important in the application since heat is generated in the junction area affecting TMOSFET. In this paper, analyzing the temperature characteristics for different number bonding for SJ TMOSFET with an embedded temperature sensor is carried out after designing the diode temperature sensor at the surface of SJ TMOSFET for the class of 100 V and 100 A for a BLDC motor.

• The Journal of Korean Society for Radiation Therapy
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• v.17 no.2
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• pp.161-166
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• 2005

Purpose : Electron is used for the treatment of skin cancer, breast cancer, and head and neck cancer in clinic. Our study is performed to check the isodose distribution in source surface distance(SSD)and source bolus distance(SBD)setup, nipple influence to isodose distribution of electron, junctional area isodose variation of photon and electron field. Materials and Methods : The electron dose distribution measures the diameter for 20 cm hemisphere paraffin phantom 2 made. It inserted the film between 2 paraffin phantom and it investigated it got radiation and dose distribution curve. Results : The 8% of isodose difference is with the surface distance(SSD)and source bolus distance(SBD)setup. The electon when the nipple exists inside the field, as nipple size it cuts the bolus and when it puts out and there is a possibility of getting the dose distribution which is homogeneous. When in the junction of electron and photon it uses the bolus it uses in the electron field whole, there is a possibility of getting the dose distribution which is homogeneous. Conclusion : The dose distribution decrease from the SBD setup. To reduce the influence of nipple, corresponding volume of bolus should be removed. And bolus covering all the electron field reduced hot and cold spot of junctional area of photon. In the future becomes the research which sees an effective electron therapy.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.414-423
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• 2007

Field Emission Display(FED) has significant advantages over existing display technologies, particularly in the area of small and high quality display. In order to test the feasibility of fabricating the System-on-Chip(SOC) with FED, we conducted the experiment to use the p-n junction as an electron beam source for the flat panel display. A novel structure was constructed to form p-n junctions by generating inversion layer with the electric field from the cantilever style gate. When we applied more than 220V at the cantilever style gate which has a height of $1{\mu}m$, avalanche breakdown onset was successfully achieved. The characteristics was compared with the electron emission from the ultra shallow junction in the avalanche region. The experiment result and the future direction were discussed.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.270-273
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• 2000

We have fabricated and analyzed photodiodes for optical link with Si pin structures. As the results of experiment, the web patterned photodiode(type C) with $p^{+}$-guard ring showed low junction capacitance of 6~7 pF at $V_{R}$=-5V and high separation ability for optical signal(dark current : $\leq$ 5 nA, optical signal current : $\geq$ 340 nA) due to the small effective $p^{+}$-n junction area and the expanded electric field region. The fabricated Si pin photodiode can be applicable for detecting an optical signal with the wavelength of about 660~670 nm. It can also be integrated with the twin well CMOS structure to develope an one chip based optical receiver IC. IC.C.

• Journal of Sensor Science and Technology
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• v.31 no.1
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• pp.1-5
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• 2022

In this paper, the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector with high sensitivity in the 408 nm - 941 nm range are presented. High sensitivity is important for photodetectors, which are used in several scientific and industrial applications. Owing to its inherent amplifying characteristics, the GBT MOSFET-type photodetector exhibits high sensitivity. The presented GBT MOSFET-type photodetector was designed and fabricated via a standard 0.18 ㎛ complementary metal-oxide-semiconductor (CMOS) process, and its characteristics were analyzed. The photodetector was analyzed with respect to its width to length (W/L) ratio, bias voltage, and incident-light wavelength. It was confirmed experimentally that the presented GBT MOSFET-type photodetector has over 100 times higher sensitivity than a PN-junction photodiode with the same area in the 408 nm - 941 nm range.

• The Journal of Korean Society for Radiation Therapy
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• v.10 no.1
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• pp.60-68
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• 1998

Treatment of a large diseased area with electron often requires the use of two or more adjoining fields. In such cases, not only electron beam divergence and lateral scattering but also fields overlapping and separation may lead to significant dose inhomogeneities(${\pm}20\%$) at the field junction area. In this study, we made Acrylic Electron Wedges to improve dose homogeneities(${\pm}5\%$) in these junction areas and considered application it to clinical practices. All measurements were made using 6, 9, 12, 16, 20MeV Electron beams from a linear accelerator for a $10{\times}10cm$ field at 100cm SSD. Adding a 1 mm sheet of acryl gradually from 1 mm to 15 mm, We acquired central axis depth dose beam profile and isodose curves in water phantom. As a result, for all energies, the practical range was reduced by approximately the same distance as the thickness of the acryl insert, e.g. a 1 mm thick acryl insert reduce the practical range by approximately 1 mm. For every mm thickness of acryl inserted, the beam energy was reduced by approximately 0.2MeV. These effects were almost independent of beam energy and field size. The use of Acrylic Electron Wedges produced a small increase $(less\;than\;3\%)\;in\;the\;surface\;dose\;and\;a\;small\;Increase(less\;than\;1\%)$ in X-ray contamination. For acryl inserts, thickness of 3 mm or greater, the penumbra width increased nearly linear for all energies and isodose curves near the beam edge were nearly parallel with the incident beam direction, and penumbra width was $35\;mm{\sim}40\;mm$. We decide heel thickness and angle of the wedge at this point. These data provide the information necessary to design Acrylic Electron Wedge which can be use to improve dose uniformity at electron field junctions and it will be effectively applicated in clinical practices.

• Journal of Magnetics
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• v.7 no.3
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• pp.72-79
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• 2002

Local M-H loops have been measured on the free layer of a tunneling magnetoresistance (TMR) junction using the magneto-optical Kerr effect (MOKE) system, with an optical beam size of about 2 $\mu$m diameter. Tunnel junctions were deposited using the DC magnetron sputtering method in a chamber with a base pressure of 3$\times$10$^{-9}$ Torr. The relatively irregular variations of coercive force H$_c$(∼17.5 Oe) and unidirectional anisotropy field H$_{ua}$(∼7.5 Oe) in the as-deposited sample are revealed. After $200{^{\circ}C}$ annealing, He decreases to 15 Oe but H$_{ua}$ increases to 20 Oe with smooth local variations. Two-dimensional plots of H$_c$ and H$_{ua}$ show the symmetric saddle shapes with their axes aligned with the pinned layer, irrespective of the annealing field angle. This is thought to be caused by geometric effects during deposition, together with a minor annealing effect. In addition, the variation of root mean square (RMS) surface roughness reveals it to be symmetric with respect to the center of the pinned-layer axis, with the roughness of 2.5 $\AA$ near the edge and 5.8 $\AA$ at the junction center. Comparison of surface roughness with the variation of H$_{ua}$ suggests that the H$_{ua}$ variation of the free layer is well described by dipole interactions related to surface roughness. As a whole, the reversal magnetization is not uniform over the entire junction area and the macroscopic properties are governed by the average sum of local distributions.

• Journal of Navigation and Port Research
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• v.26 no.1
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• pp.95-100
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• 2002

The first version of KHCM was Published in 1992 and is currently used in engineering Practice extensively. The study of new manual was initiated by Korea Institute of Construction Technology 1998 and is intended to be ready for publication by the year 2002. According to the field survey, the action of the individual merging vehicle creates turbulence in the vicinity of the ramp-freeway junction area. The purpose of this paper is to develop the model for Predicting the for entering the lanes 1 and 2($V_{12}$) and the density function at the influence zone by comがring the research works on the ramp junction in the USHCM 2000. The methodology has two major steps : the determination of the flow entering Lanes 1 and 2 immediately upstream of the merge influence area: and the density of the flow within the ramp influence area As a result of this paper the specific functions for such models are suggested through the regression analysis of data collected at four freeway fields in Korea.