Design and Fabrication of Si pin photodiode for APF optical link

APF optical link용 Si pin photodiode의 설계 및 제작

We have fabricated and analyzed photodiodes for optical link with Si pin structures. As the results of experiment, the web patterned photodiode(type C) with $p^{+}$-guard ring showed low junction capacitance of 6~7 pF at $V_{R}$=-5V and high separation ability for optical signal(dark current : $\leq$ 5 nA, optical signal current : $\geq$ 340 nA) due to the small effective $p^{+}$-n junction area and the expanded electric field region. The fabricated Si pin photodiode can be applicable for detecting an optical signal with the wavelength of about 660~670 nm. It can also be integrated with the twin well CMOS structure to develope an one chip based optical receiver IC. IC.C.