• Journal of IKEEE
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• v.23 no.3
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• pp.756-761
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• 2019

In this paper, we propose SC-SJ(Shielding Connected-Super Junction) UMOSFET structure in which p-pillars of conventional 4H-SiC Super Junction UMOSFET structures are placed under the shielding region of UMOSFET. In the case of the proposed SC-SJ UMOSFET, the p-pillar and the shielding region are coexisted so that no breakdown by the electric field occurs in the oxide film, which enables the doping concentration of the pillar to be increased. As a result, the on-resistance is lowered to improve the static characteristics of the device. Through the Sentaurus TCAD simulation, the static characteristics of proposed structure and conventional structure were compared and analyzed. The SC-SJ UMOSFET achieves a 50% reduction in on-resistance compared to the conventional structure without any change in the breakdown voltage.

• 전기의세계
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• v.13 no.3
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• pp.13-20
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• 1964

The measurements of X-ray and Gamma-ray Dose Rate have been successfully made by measuring the short circuit current of the Silicon P-N Junction Diode being irradiated. The short circuit current flows when a silicon P-N Junction Diode is irradiated by X-ray of Gammaray radiations due to photovoltaic effect. A brief analysis is given in order to verify the proportionality of a short circuit current to the Dose Rate. Using this method, measurements of X-ray Dose Rate were carried out in the range of 0.05-1600 r/m successfully. The calibration was made by comparing with Victoreen condenser r-meter. Some advantages in this Dose Rate meter over a condenser r-meter were found. One can measure a continous variation of X-ray Dose Rate with this rate meter at the control console of X-ray device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.276-281
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• 2012

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. Generally most of field effect concentrations shows on the edge of power devices. Can be improve the breakdown characteristic using edge termination technology. In this paper, considering the variables that affect the breakdown voltage and optimization of parameters result for 600 V Super Junction MOSFET Field ring.

• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.964-969
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• 2014

In Super Junction MOSFET, Charge Balance is the most important issue of the trench filling Super Junction fabrication process. In order to achieve the best electrical characteristics, the N type and P type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, called Charge Balance Condition. In this paper, two methods from the fabrication process were used at the Charge Balance condition: Trench angle decreasing process and Bottom implantation process. A lower on-resistance could be achieved using a lower trench angle. And a higher breakdown voltage could be achieved using the bottom implantation process. The electrical characteristics of manufactured discrete device chips are compared with those of the devices which are designed of TCAD simulation.

• Progress in Superconductivity and Cryogenics
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• v.19 no.4
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• pp.18-21
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• 2017

We report a method for improving heat exchange between cryo-cooled large-power-dissipation devices and liquid cryogen. Micro-machined monolithic heat sinks were fabricated on a high integration density superconducting Josephson device, and studied for their effect on cooling the device. The monolithic heat sink showed a significant enhancement of cooling capability, which markedly improved the device operation under large dc- and microwave power dissipation. The detailed mechanism of the enhancement still needs further modeling and experiments in order to optimize the design of the heat sink.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.254-254
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• 2009

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1372-1373
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• 2006

An electrostatic discharge (ESD) protection device, so called, N-type SCR with P-type MOSFET pass structure (NSCR_PPS), was analyzed for high voltage I/O applications. A conventional NSCR_PPS device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latchup problem during normal operation. However, a modified NSCR_PPS device with proper junction/channel engineering demonstrates highly latchup immune current- voltage characteristics.

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.280-287
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• 2011

The heat temperature of a light emitting diode (LED) is investigated with the thermoelectric device (TED). The Peltier effect of the thermoelectric device is used to control the heat radiation and the junction temperature of high-power LEDs. For the typical specific current (350 mA) of high-power (1 W) LEDs, the LED temperature and the p-n junction temperature become $64.5^{\circ}C$ and $79.1^{\circ}C$, respectively. For 0.1~0.2 W driving power of TED, the LED temperature and the junction temperature are reduced to be $54.2^{\circ}C$ and $68.9^{\circ}C$, respectively. As the driving power of the TED increases over 0.2 W, the temperature of LED itself and the junction temperature are increased due to the heat reversed from the heat-sink to LED. As the difference of temperature between LED and the heat-sink is increased, the quantity of reversed heat becomes larger and it results to degrade the cooling capability of TED.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.11
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• pp.104-108
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• 2012

Flexible organic thin film solar cell device with Bulk Hetero-Junction (BHJ) structure was fabricated with blended conjugated polymer of PCDTBT : $PC_{71}BM$ as active layer. Surface of ITO anode for the organic solar cell device was treated with ozone. The organic solar cell device with bare ITO showed short circuit current density ($J_{sc}$) of $8.2mA/cm^2$, open-circuit voltage ($V_{oc}$) of 0.73V, fill factor (FF) of 0.36, and power conversion efficiency (PCE) of 2.16%, respectively. The organic solar cell device with ozone treated ITO anode revealed distinctively improved performance parameters:$J_{sc}$ of $9.8mA/cm^2$, $V_{oc}$ of 0.82V, FF of 0.43, PCE(${\eta}$) of 3.42%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.142-142
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• 2007

Micro thermoelectric generator has been attractive for the alternative power source to operate the wireless sensor node. In this paper, we designed the column-type micro thermoelectric device and their device characteristics were measured. n-type Bi2Te3 and p-type BiSbTe3 thermoelectric thin films were grown on (001) GaAs substrates by metal organic chemical vapour deposition (MOCVD) and they were pattemed. The height of thermoelectric film were controlled by the deposition time, temperature and MO-x gas pressure. Seebeck coefficient was measured at room temperature and hole concentration and electrical resistivity of thermoelectric film were also characterized.