• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.279-282
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• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• Applied Microscopy
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• 제48권2호
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• pp.49-53
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• 2018

A successful transmission electron microscope (TEM) analysis is closely related to the preparation of the TEM specimen and should be followed by the suitable TEM specimen preparation depending on the purpose of analysis and the subject materials. In the case of the Si-based anode material, lithium atoms of formed Li silicide were removed due to ion beam and electron beam during TEM specimen preparation and TEM observation. To overcome the problem, we proposed a new technique to make a TEM specimen without the ion beam damage. In this study, two types of test specimens from the Si-based anode material of Li-ion battery were prepared by respectively adopting the only focused ion beam (FIB) method and the new FIB-ultramicrotome method. TEM analyses of two samples were conducted to compare the Ga ion damage of the test specimen.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2004년도 추계학술발표회 발표논문집
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• pp.719-720
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• 2004

A multi-megawatt long pulse ion source (LPIS) of neutral beam injector was developed for the KSTAR. Beam extraction experiments of the LPIS were carried out at the neutral beam test stand (NBTS). Design requirements for the ion source were 120 kV/65 A deuterium beam and a 300 s pulse length. A maximum ion density of $9.1310^{11}$ $cm^{-3}$ was measured by using electric probes, and an optimum arc efficiency of 0.46 A/kW was estimated with ion saturation current of the probes, arc power, and total beam area. An arcing problem, caused by the structural defect of decelerating grid supporter, in the third gap was solved by the blocking of backstream ion particles, originated from the plasma in the neutralizer duct, through the unnecessary spaces on the side of grid supporter. A maximum drain power of 1.5 MW (i.e. 70 kV/21 A) with hydrogen was measured for a pulse duration of 0.5 s. Optimum beam perveance was ranged from 0.75 to 0.85. An improved design of accelerator for the effective control of beam particle trajectory should provide higher beam perveance.

• 대한기계학회논문집A
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• 제30권9호
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• pp.1166-1172
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• 2006

This paper describes an alignment method of the ion column which is used for a focused-ion-beam machining system. The alignment parameters for mechanical and electrical components are introduced, and also sample images are used for evaluating the experiments. The experimental results show that geometrical positions of mechanical components have an influence on the quality of emitted ion beam. In addition, we can successfully align the traveling axis of ions by using mechanical and electrical methods.

• 한국표면공학회지
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• 제29권5호
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• pp.474-477
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• 1996

The solid state cesium ion beam sputter deposition system has been developed for negative carbon ion beam deposition. The negative carbon ion beams are effectively produced by cesium ion bombardment. The C-ion beam current and deposition energy can be independently controlled for the deposition of a-D films. This system is very compact, reliable and high flux without any gas discharge or plasma and has been successfully used in the studies of the ion beam deposited amorphous diamond(a-D)

• 한국의학물리학회지:의학물리
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• 제31권3호
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• pp.71-80
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• 2020

This paper provides a brief review of the advanced technologies for carbon ion radiotherapy (CIRT), with a focus on current developments. Compared to photon beam therapy, treatment using heavy ions, especially a carbon beam, has potential advantages due to its physical and biological properties. Carbon ion beams with high linear energy transfer demonstrate high relative biological effectiveness in cell killing, particularly at the Bragg peak. With these unique properties, CIRT allows for accurate targeting and dose escalation for tumors with better sparing of adjacent normal tissues. Recently, the available CIRT technologies included fast pencil beam scanning, superconducting rotating gantry, respiratory motion management, and accurate beam modeling for the treatment planning system. These techniques provide precise treatment, operational efficiency, and patient comfort. Currently, there are 12 CIRT facilities worldwide; with technological improvements, they continue to grow in number. Ongoing technological developments include the use of multiple ion beams, effective beam delivery, accurate biological modeling, and downsizing the facility.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.595-596
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• 2013

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 춘계학술대회 논문집
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• pp.329-330
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• 2009

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.57-60
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• 2003

Electro-Optical (EO) performances for the ion beam (IB) aligned twisted-nematic (TN)-liquid crystal display (LCD) with ion beam exposure on the new of diamond like carbon (DLC) thin film surface were investigated. Voltage-transmittance (V-T) curve and response time without backflow bounce in the ion beam aligned TN-LCD with ion beam exposure for 0.5 and 1min on the DLC thin film was observed. Also. the fast response time of ion beam aligned TN-LCD with ion beam exposure for 1min on the DLC thin film surface can be achieved. The residual DC voltage of the ion beam aligned TN-LCD on the DLC thin film surface was almost the same as that of the rubbing aligned TN-LCD on the polyimide(PI) surface.