• Journal of the Korean institute of surface engineering
• /
• v.52 no.4
• /
• pp.203-210
• /
• 2019

In this work, anodizing behavior of 6xxx series aluminum alloys was studied under constant current density and constant voltage conditions in 20% sulfuric acid solution by V-t curves, I-t curves, thickness measurement, observations of surface appearance and cross-sectional observation of anodizing films. The film growth rate of the anodizing films on Al6063, Al6061 and Al6082 obtained at 20 V were $0.63{\mu}m/min$. $0.46{\mu}m/min$ and $0.38{\mu}m/min$, respectively. Time to the initiation of imperfections at the oxide/substrate interface under constant current condition was shortened and colors of anodizing films became darker with the amount of alloying elements in 6xxx series aluminum alloys. Based upon the experimental results obtained in this work, it is concluded that maximum anodizing film thickness without interfacial defects is reduced with increasing amount of alloying elements and brighter anodizing films can be obtained by decreasing amount of alloying elements in the aluminum alloys.

• Journal of Ceramic Processing Research
• /
• v.13 no.spc2
• /
• pp.428-432
• /
• 2012

Polyamidimide (PAI)-colloidal silica (CS) nanohybrid films were synthesized by an advanced sol-gel process. The synthesized PAI-CS hybrid films have a uniform and stable chemical bonding and there is no interfacial defects observed by TEM. The thermal degradation ratio of PAI-CS (10 wt%) hybrid films is delayed by 100 ℃ compared with pure PAI sample determined by on set temperature range in TGA. The dielectric constant of PAI-CS (10 wt%) hybrid films decreases with increasing CS content up to about 5 wt% but increases at higher CS content, which is not explained simply by effective medium therories (EMT). The duration time of PAI-CS (10 wt%) hybrid coil is 38 sec, which is very longer than that of pure PAI coil sample. The PAI-CS (10 wt%) hybrid film has a higher breakdown voltage resistance than the pure PAI film at surge environment and exhibits superior heat resistance. The PAI-CS (10 wt%) sample shows the advanced and stable thermal emission properties in transformer module compared with the pure PAI sample. This result illustrates that the advanced thermal conductivity and expansion properties of PAI-CS sample in the case of appropriate sol-gel processes brings the stable thermal emission in transformer system. Therefore, new PAI-CS hybrid samples with such stable thermal emission properties are expected to be used as a high functional coating application in ET, IT and electric power products.

• Elastomers and Composites
• /
• v.48 no.3
• /
• pp.216-220
• /
• 2013

The phase separation in Wood Flour-Polymer Composite (WPC) was investigated and the reasons for change in mechanical properties with the content of wood flour were explored. The wood flour-polypropylene composite samples with different wood flour contents were prepared. From differential scanning calorimetry (DSC) thermograms of WPC samples, the trend of crystallinity and melting temperature ($T_m$) were analyzed. The crystallinity and melting temperature increased and then decreased as the content of wood flour increased. From these results, it was confirmed that at the low wood flour content the wood flours were dispersed into the polypropylene matrix but at the high wood flour content, the phase separation between polymer and wood flour phases appeared. The tensile strength of WPC samples was continuously decreased with the increase of wood flour content. At a low wood flour content, the low interfacial bonding and the decrease in crystallinity were the main reasons for the decrease in tensile strength with the increase of wood flour content. At a high wood flour content, the decrease in tensile strength resulted from the interfacial defects between the polymer and wood flour phases. The impact strength of the WPC sample showed the maximum behavior with the content of wood flour. At a low wood flour content, the impact strength was enhanced owing to the decrease in brittleness, which results from the decrease in crystallinity. At a high wood flour content, however, the impact strength decreased due to phase separation.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
• /
• 2004.05a
• /
• pp.347-351
• /
• 2004

[ $Si_3N_4$ ] composites have been extensively studied for engineering ceramics, because it has excellent room and high temperature strength, wear resistance properties, good resistance to oxidation, and good thermal and chemical stability. In the present work, carbon short fiber reinforced $Si_3N_4$ ceramics were fabricated by hot press method in $N_2$ atmosphere at $1800^{\circ}C$ using $Al_2O_3\;and\;Y_2O_3$ as sintering additives. Content of carbon short fiber was $0\%,\;0.1\%\;and\;0.3\%$. The composites were evaluated in terms of density, flexural strength and elastic modulus through the 3-point bending test at room temperature. Also, The wear behavior was determined by the pin on disk wear tester using silicon nitride ball. Experimental density and flexural strength decreased with increasing content of carbon fiber. But specific modulus increased with increasing content of carbon fiber. In addition, friction coefficient and specific wear loss decreased with increasing content of carbon short fiber by reason of interfacial defects between matrix and fiber.

• Korean Journal of Materials Research
• /
• v.4 no.1
• /
• pp.31-36
• /
• 1994

The bonding behavior of $SiO_{2}$ thin film and glass during VCR head fabrication was investigated, varying the surface roughness of substrate and the sputtering parameter. Insufficient fillings of grooves In the $SiO_{2}$ film with glass was postulated to give rise to the generation of bubble in the glass. The surface roughness of $SiO_{2}$ film was found to depend on that of substrate. The lower the deposition rate, the smoother the surface of film. The bubble free glass after bonding could be obtained using substrate polished with 0.05$\mu\textrm{m}$ $Al_2O_3$ powder under the sputtering condition of 10% oxygen pressure.

• Polymer(Korea)
• /
• v.34 no.2
• /
• pp.108-115
• /
• 2010

The effects of acid-treated MWCNT and coupling agent on properties of MWCNT/SBR are investigated in this work. The MWCNTs oxidized using sulfuric and nitric acids were analyzed by the Raman scattering and Fourier transformed infrared spectroscopy(FT-IR). The FT-IR results indicate the presence of -COOH groups in the treated samples, and Raman spectroscopy of the acidtreated MWCNTs further corroborates the formation of surface defect due to the introduction of carboxyl groups. And the nanocomposites reinforced with MWCNTs were characterized extensively using the scanning electron microscopy(SEM), electrical conductivity, thermal conductivity, and tensile properties measurements. The results showed that nanocomposites onto acid-treated MWCNTs enhanced mechanical properties compared to those containing MWCNTs without acid treatment. These findings confirmed the improved interfacial interactions between MWCNTs and SBR arising from the coupling agents. But the electrical and thermal conductivity of nanocomposites decreased due to the chopping and formation of surface defects of MWCNTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.11
• /
• pp.949-955
• /
• 2009

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

• Journal of Information Display
• /
• v.12 no.4
• /
• pp.209-212
• /
• 2011

The threshold voltage shift (${\Delta}V_{th}$) under positive-voltage bias stress (PBS) of InGaZnO (IGZO) thin-film transistors (TFTs) annealed at different temperatures in air was investigated. The dramatic degradation of the electrical performance was observed at the sample that was annealed at $700^{\circ}C$. The degradation of the saturation mobility (${\mu}_{sat}$) resulted from the diffusion of indium atoms into the interface of the IGZO/gate insulator after crystallization, and the degradation of the subthreshold slope (S-factor) was due to the increase in the interfacial and bulk trap density. In spite of the degradation of the electrical performance of the sample that was annealed at $700^{\circ}C$, it showed a smaller ${\Delta}V_{th}$ under PBS conditions for $10^4$ s than the samples that were annealed at $500^{\circ}C$, which is attributed to the nanocrystal-embedded structure. The sample that was annealed at $600^{\circ}C$ showed the best performance and the smallest ${\Delta}V_{th}$ among the fabricated samples with a ${\mu}_{sat}$ of $9.38cm^2/V$ s, an S-factor of 0.46V/decade, and a ${\Delta}V_{th}$ of 0.009V, which is due to the passivation of the defects by high thermal annealing without structural change.

• Progress in Superconductivity and Cryogenics
• /
• v.15 no.4
• /
• pp.15-20
• /
• 2013

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

• Transactions on Electrical and Electronic Materials
• /
• v.18 no.1
• /
• pp.55-57
• /
• 2017

Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.