• Title/Summary/Keyword: Interface stability

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Study of Bidirectional DC-DC Converter Interfacing Energy Storage for Vehicle Power Management Using Real Time Digital Simulator (RTDS)

  • Deng, Yuhang;Foo, Simon Y.;Li, Hui
    • Journal of Power Electronics
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    • v.11 no.4
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    • pp.479-489
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    • 2011
  • The bidirectional dc-dc converter, being the interface between Energy Storage Element (ESE) and DC bus, is an essential component of the power management system for vehicle applications including electric vehicle (EV), hybrid electric vehicle (HEV), and fuel cell vehicle (FCV). In this paper, a novel multiphase bidirectional dc-dc converter interfacing with battery to supply and absorb the electric energy in the FCV system was studied with the help of real time digital simulator (RTDS). The mathematical models of fuel cell, battery and dc-dc converter were derived. A power management strategy was developed and first simulated in RTDS. A Power Hardware-In-the-Loop (PHIL) simulation using RTDS is then presented. The main challenge of this PHIL is the requirement for a highly dynamic bidirectional Simulation-Stimulation (Sim-Stim) interface. This paper describes three different interface algorithms. The closed-loop stability of the resulting PHIL system is analyzed in terms of time delay and sampling rate. A prototype bidirectional Sim-Stim interface is designed to implement the PHIL simulation.

Study on the Bonding Interface in Directly Bonded Si-Si and Si-$SiO_2$ Si Wafer Pairs (직접 접합된 Si-Si, Si-$SiO_2$/Si기판쌍의 접합 계면에 관한 연구)

  • Ju, Byeong-Gwon;Bang, Jun-Ho;Lee, Yun-Hui;Cha, Gyun-Hyeon;O, Myeong-Hwan
    • Korean Journal of Materials Research
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    • v.4 no.2
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    • pp.127-135
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    • 1994
  • We investigated the bonding interfaces of directly-bonded Si-Si and $Si-Sio_{2}$/Si wafer pairs. By the angle lapping-delineation, anisotropic etching, and (FIR)-TEM observation methods, we studied on the interface defects and the transient region originated from the interface stress, the various types of voids, the formation and stability of interfacial oxide. We also compared the interface image of the bonded $Si-Sio_{2}$ with that of a typically grown $Si-Sio_{2}$.

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An Input-Powered High-Efficiency Interface Circuit with Zero Standby Power in Energy Harvesting Systems

  • Li, Yani;Zhu, Zhangming;Yang, Yintang;Zhang, Chaolin
    • Journal of Power Electronics
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    • v.15 no.4
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    • pp.1131-1138
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    • 2015
  • This study presents an input-powered high-efficiency interface circuit for energy harvesting systems, and introduces a zero standby power design to reduce power consumption significantly while removing the external power supply. This interface circuit is composed of two stages. The first stage voltage doubler uses a positive feedback control loop to improve considerably the conversion speed and efficiency, and boost the output voltage. The second stage active diode adopts a common-grid operational amplifier (op-amp) to remove the influence of offset voltage in the traditional comparator, which eliminates leakage current and broadens bandwidth with low power consumption. The system supplies itself with the harvested energy, which enables it to enter the zero standby mode near the zero crossing points of the input current. Thereafter, high system efficiency and stability are achieved, which saves power consumption. The validity and feasibility of this design is verified by the simulation results based on the 65 nm CMOS process. The minimum input voltage is down to 0.3 V, the maximum voltage efficiency is 99.6% with a DC output current of 75.6 μA, the maximum power efficiency is 98.2% with a DC output current of 40.4 μA, and the maximum output power is 60.48 μW. The power loss of the entire interface circuit is only 18.65 μW, among which, the op-amp consumes only 2.65 μW.

A study on the heat dissipation characteristic of thermal interface materials with Graphene, Cu and Ag nano powders (Graphene, Cu와 Ag 나노 파우더를 이용한 열전도재의 방열 특성에 관한 연구)

  • Park, Sang-Hyeok;Im, Sung-Hoon;Kim, Hyun-Ji;Noh, Jung-Pil;Huh, Sun-Chul
    • Journal of the Korean Society of Industry Convergence
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    • v.22 no.6
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    • pp.767-773
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    • 2019
  • The thermal diffusion performance of the electronic device is a factor for evaluating the stability of the electronic device. Therefore, many of research have been conducted to improve the thermal characteristics of thermal interface materials, which are materials for thermal diffusion of electronic products. In this study, nano thermal grease was prepared by blending graphene, silver and copper nano powders into a thermal grease, a type of thermal interface materials, and the heat transfer rate was measured and compared for the purpose of investigating the improved thermal properties. As a result, the thermal properties were good in the order of graphene, silver and copper, which is thought to be due to the different thermal properties of the nano powder itself.

Electrochemical Characteristics of Dental Implant in the Various Simulated Body Fluid and Artificial Saliva (다양한 유사체액과 인공타액에서 치과용 임플란트의 전기화학적 특성)

  • Kim, T.H.;Park, G.H.;Son, M.K.;Kim, W.G.;Jang, S.H.;Choe, H.C.
    • Journal of the Korean institute of surface engineering
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    • v.41 no.5
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    • pp.226-231
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    • 2008
  • Titanium and its alloy have been widely used in dental implant and orthopedic prostheses. Electrochemical characteristics of dental implant in the various simulated body fluids have been researched by using electrochemical methods. Ti-6Al-4V alloy implant was used for corrosion test in 0.9% NaCl, artificial saliva and simulated body fluids. The surface morphology was observed using scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The electrochemical stability was investigated using potentiosat (EG&G Co, 263A). The corrosion surface was observed using scanning electron microscopy (SEM). From the results of potentiodynamic test in various solution, the current density of implant tested in SBF and AS solution was lower than that of implant tested in 0.9% NaCl solution. From the results of passive film stability test, the variation of current density at constant 250 mV showed the consistent with time in the case of implant tested in SBF and AS solution, whereas, the current density at constant 250mV in the case of implant tested in 0.9% NaCl solution showed higher compared to SBF and AS solution as time increased. From the results of cyclic potentiodynamic test, the pitting potential and |$E_{pit}\;-\;E_{corr}$| of implant tested in SBF and AS solution were higher than those of implant tested in 0.9% NaCl solution.

INFLUENCE OF IMPLANT-ABUTMENT INTERFACE DESIGN, IMPLANT DIAMETER AND PROSTHETIC TABLE WIDTH ON STRENGTH OF IMPLANT-ABUTMENT INTERFACE : THREE-DIMENSIONAL FINITE ELEMENT ANALYSIS (임플랜트의 지대주 연결방식, 임플랜트의 직경 및 지대주 연결부위의 직경 차이에 따른 응력분포에 관한 삼차원 유한요소분석)

  • Oh Se-Woong;Yang Jae-Ho;Lee Sun-Hyung;Han Jung-Suk
    • The Journal of Korean Academy of Prosthodontics
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    • v.41 no.4
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    • pp.393-404
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    • 2003
  • Statement of problem. Higher incidence of prosthetic complications such as screw loosening, screw fracture has been reported for posterior single tooth implant. So, there is ongoing research regarding stability of implant-abutment interface. One of those research is increasing the implant diameter and prosthetic table width to improve joint stability. In another part of this research, internal conical type implant-abutment interface was developed and reported joint strength is higher than traditional external hex interface. Purpose. The purpose of this study is to compare stress distribution in single molar implant between external hex butt joint implant and internal conical joint implant when increasing the implant diameter and prosthetic table width : 4mm diameter, 5mm diameter, 5mm diameter/6mm prosthetic table width. Material and method. Non-linear finite element models were created and the 3-dimensional finite element analysis was performed to see the distribution of stress when 300N static loading was applied to model at $0^{\circ},\;15^{\circ},\;30^{\circ}$ off-axis angle. Results. The following results were obtained : 1. Internal conical joint showed lower tensile stress value than that of external hex butt joint. 2. When off-axis loading was applied, internal conical joint showed more effective stress distribution than external hex butt joint. 3. External hex butt joint showed lower tensile stress value when the implant diameter was increased. 4. Internal conical joint showed lower tensile stress value than external hex butt joint when the implant diameter was increased. 5. Both of these joint mechanism showed lower tensile stress value when the prosthetic table width was increased. Conclusion. Internal conical joint showed more effective stress distribution than external hex joint. Increasing implant diameter showed more effective stress distribution than increasing prosthetic table width.

The Site Selection of 100MVA STATCOM for Voltage Stability Enhancement in Korean Metropolitan Area (수도권 전압안정도 향상을 위한 100MVA STATCOM 위치선정 연구)

  • Chang, Byung-Hoon;Kim, Soo-Yul;Han, Jeong-Yeol;Choi, Don-Keun;Song, Hwa-Chang;Lee, Byong-Joon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.9
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    • pp.1543-1548
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    • 2007
  • This paper reports a study on determination of the adequate location of 100 MVA STATCOM regarding the transfer capability enhancement on the metropolitan interface as well as the economy in system operation. The base case in the study was established considering a scenario of the energy support to North Korea from the KEPCO (Korea Electric Power Corporation) system through a HVDC interconnection. In the base case, the energy support was approximately modeled with a load of 1500 MW, and by the load addition, the system was weakened in terms of voltage stability and transfer capability. After a thorough investigation on the case, the location of the STATCOM was decided to compensate the reactive deficit of the modified system and to maximize the operational benefit which can be estimated by FV analysis.

Thermal Stability Improvement of Ni-Silicide using Ni-Co alloy for Nano-scale CMOSFET (나노급 CMOSFET을 위한 니켈-코발트 합금을 이용한 니켈-실리사이드의 열안정성 개선)

  • Park, Kee-Young;Jung, Soon-Yen;Han, In-Shik;Zhang, Ying-Ying;Zhong, Zhun;Li, Shi-Guang;Lee, Ga-Won;Wang, Jin-Suk;Lee, Hi-Deok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.1
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    • pp.18-22
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    • 2008
  • In this paper, the Ni-Co alloy was used for thermal stability estimation comparison with Ni structure. The proposed Ni/Ni-Co structure exhibited wider range of rapid thermal process windows, lower sheet resistance in spite of high temperature annealing up to $700^{\circ}C$ for 30 min, more uniform interface via FE-SEM analysis, NiSi phase peak. Therefore, The proposed Ni/Ni-Co structure is highly promising for highly thermal immune Ni-silicide for nano-scale MOSFET technology.

The Formation and Phase Stability of Cobalt-aluminide(CoAl) Thin Films on GaAs

  • Ko, Dae-Hong;Robert Sinclair
    • The Korean Journal of Ceramics
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    • v.4 no.1
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    • pp.43-46
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    • 1998
  • We have investigated the formation and thermal stability of cobalt aluminide(CoAl) thin films on GaAs. In order to obtain cobalt-aluminide thin films, we deposited a multilayer of Co/Al on GaAs, and subsequently annealed the samples at 80$0^{\circ}C$ for 30 min. After annealing, single-phase cobalt aluminide was produced showing a flat and uniform interface with GaAs. which indicates that cobalt aluminide (CoAl) is thermally stable with GaAs. In addition, the adherence and mechanical properties of the as-deposited, and annealed Co/Al multilayer structure on GaAs are compatible with those required for device fabrication processes. The electrical property of the CoAl/GaAs contact shows rectifying characteristics, indicating that the diodes were usable as rectifying gate electrodes.

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Hole Transfer Layer p-doped with a Metal Oxide for Low Voltage Operation of OLEDs

  • Shin, Won-Ju;Lee, Je-Yun;Kim, Jae-Chang;Yoon, Tae-Hoon;Kim, Tae-Shick;Song, Ok-Keun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.435-438
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    • 2007
  • $V_{2}O_{5}$ was tested as a p-dopant for lower operating voltage and higher stability of OLEDs. Low voltage and high stability were achieved using this doping layer. It can be separated to bulk and interface contributions and the latter is a more dominant factor both of operation voltage and stability.

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