Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Thermal Stability Improvement of Ni-Silicide using Ni-Co alloy for Nano-scale CMOSFET

나노급 CMOSFET을 위한 니켈-코발트 합금을 이용한 니켈-실리사이드의 열안정성 개선

  • 박기영 (충남대학교 전자공학과) ;
  • 정순연 (충남대학교 전자공학과) ;
  • 한인식 (충남대학교 전자공학과) ;
  • 장잉잉 (충남대학교 전자공학과) ;
  • 종준 (충남대학교 전자공학과) ;
  • 이세광 (충남대학교 전자공학과) ;
  • 이가원 (충남대학교 전자공학과) ;
  • 왕진석 (충남대학교 전자공학과) ;
  • 이희덕 (충남대학교 전자공학과)
  • Published : 2008.01.01
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Abstract

In this paper, the Ni-Co alloy was used for thermal stability estimation comparison with Ni structure. The proposed Ni/Ni-Co structure exhibited wider range of rapid thermal process windows, lower sheet resistance in spite of high temperature annealing up to $700^{\circ}C$ for 30 min, more uniform interface via FE-SEM analysis, NiSi phase peak. Therefore, The proposed Ni/Ni-Co structure is highly promising for highly thermal immune Ni-silicide for nano-scale MOSFET technology.

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References

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