The Korean Journal of Ceramics

The Korean Ceramic Society (한국세라믹학회)
권호 표지

The Formation and Phase Stability of Cobalt-aluminide(CoAl) Thin Films on GaAs

  • Ko, Dae-Hong (Department of Ceramic Engineering, Yonsei University) ;
  • Robert Sinclair (Department of Materials Science and Engineering, Stanford University)
  • Published : 1998.03.01
Download PDF
⟨ Previous Next ⟩

Abstract

We have investigated the formation and thermal stability of cobalt aluminide(CoAl) thin films on GaAs. In order to obtain cobalt-aluminide thin films, we deposited a multilayer of Co/Al on GaAs, and subsequently annealed the samples at 80$0^{\circ}C$ for 30 min. After annealing, single-phase cobalt aluminide was produced showing a flat and uniform interface with GaAs. which indicates that cobalt aluminide (CoAl) is thermally stable with GaAs. In addition, the adherence and mechanical properties of the as-deposited, and annealed Co/Al multilayer structure on GaAs are compatible with those required for device fabrication processes. The electrical property of the CoAl/GaAs contact shows rectifying characteristics, indicating that the diodes were usable as rectifying gate electrodes.

Keywords

References

  1. Modern GaAs Processing Methods R. Williams
  2. Thin Solid Films v.136 "Initial Stages of the Pd-GaAs Reaction: Formation and Decomposition of Ternary Phases" T. Sands;V.G. Keramidas;R. Gronsky;J. Washburn
  3. J. Appl. Phys v.58 "Reactions of Pd on (100) and (110) GaAs Surfaces" T. S. Kuan;J. L. Freeout;P. E. Batson;E. L. Wilkie
  4. J. Vac. Sci. Techn v.A6 "Interfacial Reactions in the Ti/GaAs system" K. B. Kim;M. Kniffin;R. Sinclair;C. R. Helms
  5. J. Appl. Phys v.72 "Amorphous Phase Formation in an As-Deposited Platinum -GaAs Interface" D. -H. Ko;R. Sinclair
  6. J. Vac. Sci. Technol. v.16 "Reactions of Vacuum-deposited thin Schottky Barrier metallizations on Gallium Arsenide" S. D. Mckherjee;D. V. Morgan;M. J. Howes;J. G. Smith;P.Brook
  7. Appl. Phys. Lett. v.23 "Effect of Alloying Behavior on the Electrical Characteristics of n-GaAs Schottky Diodes Metallized with W, Au, and Pt" A. K. Sinha;J. M. Poate
  8. Thermochemical Properties of Inorganic Substances,
  9. Binary Alloy Phase Diagrams T. B. Massalski;J.L. Marray(ed.);L.H. Bennett9ed.);H. Baker(ed.)
  10. J. Appl. Phys. v.62 "Co/GaAs Interfacial Reactions" C.J. Palmstrom;C. C. Chang;A. Yu;G. J. Calvin;J. W. Mayer
  11. J. Appl. Phys. v.61 "Phase Equilibria in Metal-gallium-arsenic Systems: Thermodynamic Considerations for metallization Materials" R. Beyers;K. B. Kim;R. Sinclair
  12. Phys. Rev. v.B37 "Electronic States of Semiconductor -metal -semiconductor Quantum-well Structures" M. L. Huberman;J. Maserjian
  13. Materials Science Reports v.5 "Stability and Epitaxial Metal/Ⅲ-V Semiconductor Heterostructures" T. Sands;C. J. Palmstrom;J. P. Harbison;V. G. Keramidas;N. Tabatabaie;T. L. Cheeks;R. Ramech;Y. Silberberg
  14. Appl. Phys. Lett. v.52 "Stability and Epitaxy of NiAl and Related Intermetallic Films on Ⅲ-V Compound Semiconductors" T. Sands
  15. Appl. Phys. Lett. v.52 "Epitaxial Growth of GaAs/NiAl/GaAs heterostructures" T. Sands;J. P. Harbison;W. K. Chan;S. A. Schwarz;C. C. Chang;C. J. Palmstrom;V. G. Keramidas
  16. J. Electron Microsc. Technique v.1 J.C. Bravman;R. Sinclair
  17. Physics of Semiconductor Devices S.M. Sze
  18. mat. Res. Soc. Proc. v.181 "Thermodynamic Stability of PtAl thin Films on GaAs" D. -H. Ko;R. Sinclair
  19. Appl. Phys. Lett. v.52 "NiAl/n-GaAs Schottky Diodes: Barrier Height Enhancement by High-temperature Annealing" T. Sands;W. K. Chan;C. C. Chang;E. W. Chase;V. G. Keramidas