References
- Modern GaAs Processing Methods R. Williams
- Thin Solid Films v.136 "Initial Stages of the Pd-GaAs Reaction: Formation and Decomposition of Ternary Phases" T. Sands;V.G. Keramidas;R. Gronsky;J. Washburn
- J. Appl. Phys v.58 "Reactions of Pd on (100) and (110) GaAs Surfaces" T. S. Kuan;J. L. Freeout;P. E. Batson;E. L. Wilkie
- J. Vac. Sci. Techn v.A6 "Interfacial Reactions in the Ti/GaAs system" K. B. Kim;M. Kniffin;R. Sinclair;C. R. Helms
- J. Appl. Phys v.72 "Amorphous Phase Formation in an As-Deposited Platinum -GaAs Interface" D. -H. Ko;R. Sinclair
- J. Vac. Sci. Technol. v.16 "Reactions of Vacuum-deposited thin Schottky Barrier metallizations on Gallium Arsenide" S. D. Mckherjee;D. V. Morgan;M. J. Howes;J. G. Smith;P.Brook
- Appl. Phys. Lett. v.23 "Effect of Alloying Behavior on the Electrical Characteristics of n-GaAs Schottky Diodes Metallized with W, Au, and Pt" A. K. Sinha;J. M. Poate
- Thermochemical Properties of Inorganic Substances,
- Binary Alloy Phase Diagrams T. B. Massalski;J.L. Marray(ed.);L.H. Bennett9ed.);H. Baker(ed.)
- J. Appl. Phys. v.62 "Co/GaAs Interfacial Reactions" C.J. Palmstrom;C. C. Chang;A. Yu;G. J. Calvin;J. W. Mayer
- J. Appl. Phys. v.61 "Phase Equilibria in Metal-gallium-arsenic Systems: Thermodynamic Considerations for metallization Materials" R. Beyers;K. B. Kim;R. Sinclair
- Phys. Rev. v.B37 "Electronic States of Semiconductor -metal -semiconductor Quantum-well Structures" M. L. Huberman;J. Maserjian
- Materials Science Reports v.5 "Stability and Epitaxial Metal/Ⅲ-V Semiconductor Heterostructures" T. Sands;C. J. Palmstrom;J. P. Harbison;V. G. Keramidas;N. Tabatabaie;T. L. Cheeks;R. Ramech;Y. Silberberg
- Appl. Phys. Lett. v.52 "Stability and Epitaxy of NiAl and Related Intermetallic Films on Ⅲ-V Compound Semiconductors" T. Sands
- Appl. Phys. Lett. v.52 "Epitaxial Growth of GaAs/NiAl/GaAs heterostructures" T. Sands;J. P. Harbison;W. K. Chan;S. A. Schwarz;C. C. Chang;C. J. Palmstrom;V. G. Keramidas
- J. Electron Microsc. Technique v.1 J.C. Bravman;R. Sinclair
- Physics of Semiconductor Devices S.M. Sze
- mat. Res. Soc. Proc. v.181 "Thermodynamic Stability of PtAl thin Films on GaAs" D. -H. Ko;R. Sinclair
- Appl. Phys. Lett. v.52 "NiAl/n-GaAs Schottky Diodes: Barrier Height Enhancement by High-temperature Annealing" T. Sands;W. K. Chan;C. C. Chang;E. W. Chase;V. G. Keramidas