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http://dx.doi.org/10.4313/JKEM.2008.21.1.018

Thermal Stability Improvement of Ni-Silicide using Ni-Co alloy for Nano-scale CMOSFET  

Park, Kee-Young (충남대학교 전자공학과)
Jung, Soon-Yen (충남대학교 전자공학과)
Han, In-Shik (충남대학교 전자공학과)
Zhang, Ying-Ying (충남대학교 전자공학과)
Zhong, Zhun (충남대학교 전자공학과)
Li, Shi-Guang (충남대학교 전자공학과)
Lee, Ga-Won (충남대학교 전자공학과)
Wang, Jin-Suk (충남대학교 전자공학과)
Lee, Hi-Deok (충남대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.1, 2008 , pp. 18-22 More about this Journal
Abstract
In this paper, the Ni-Co alloy was used for thermal stability estimation comparison with Ni structure. The proposed Ni/Ni-Co structure exhibited wider range of rapid thermal process windows, lower sheet resistance in spite of high temperature annealing up to $700^{\circ}C$ for 30 min, more uniform interface via FE-SEM analysis, NiSi phase peak. Therefore, The proposed Ni/Ni-Co structure is highly promising for highly thermal immune Ni-silicide for nano-scale MOSFET technology.
Keywords
Ni-Co alloy; Ni-silicide; Thermal stability; Nano-scale CMOSFETs;
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