Thermal Stability Improvement of Ni-Silicide using Ni-Co alloy for Nano-scale CMOSFET |
Park, Kee-Young
(충남대학교 전자공학과)
Jung, Soon-Yen (충남대학교 전자공학과) Han, In-Shik (충남대학교 전자공학과) Zhang, Ying-Ying (충남대학교 전자공학과) Zhong, Zhun (충남대학교 전자공학과) Li, Shi-Guang (충남대학교 전자공학과) Lee, Ga-Won (충남대학교 전자공학과) Wang, Jin-Suk (충남대학교 전자공학과) Lee, Hi-Deok (충남대학교 전자공학과) |
1 | K. Goto, T. Yamazaki, A. Fushida, S. Inagaki, and H. Yagi, 'Optimization of salicide process for sub 0.1um CMOS device', Symp. on VLSI Tech, p. 119, 1994 |
2 | Y. Taur, J. Sun, D. Moy, L. K. Wang, B. Davari, S. P. Klepner, and C. Y. Ting, 'Source drain contact resistance in CMOS self-aligned ', IEEE Trans. Electron Device, Vol. 34, No. 3, p. 575, 1987 DOI ScienceOn |
3 | J. B. Lasky, J. S. Nakos, O. J. Cain, and P. J. Geiss, 'Comparison of transformation to low resistivity phase and agglomeration of and ', IEEE Trans. Electron Device, 38, p. 262, 1991 DOI ScienceOn |
4 | T. Shibata, K. Hieda, M. Sato, M. Konaka, R. L. M. Dang, and H. Iizuka, 'An optimally designed process for submicron MOSFETs', Tech Dig of IEDM, p. 647, 1981 |
5 | M. A. Nicolet and S. S. Lau, 'Formation and characterization of transition-metal silicides', VLSI Electronics Microstructure science, Vol. 6, Chapter 6, Academic press, p. 457, 346, 358, 1983 |
6 | T. Morimoto, H. S. Momose, T. Iinuma, I. Kunishima, K. Suguro, H. Okana, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata, and H. Iwai, 'A NiSi salicide technology for advanced logic device', Tech. Dig. of IEDM, p. 653, 1991 |
7 | J. G. Yun, S. Y. Oh, B. F. Huang, H. H. Ji, Y. G. Kim, S. H. Park, H. S. Lee, D. B. Kim, U. S. Kim, H. S. Cha, S. B. Hu, J. G. Lee, S. K. Baek, H. S. Hwang, and H. D. Lee, 'Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer', IEEE Electron Device Lett., Vol. 26, No. 2, p. 90, 2005 DOI ScienceOn |
8 | T. H. Hou, T. F. Lei, and T. S. chao, 'Improvement of junction leakage of nickel silicided junction by a Ti-capping layer', IEEE Electron Device Lett., 20, p. 572, 1999 DOI ScienceOn |