• 제목/요약/키워드: Interface instability

검색결과 122건 처리시간 0.022초

ANALYTICAL AND NUMERICAL STUDY OF MODE INTERACTIONS IN SHOCK-INDUCED INTERFACIAL INSTABILITY

  • Sohn, Sung-Ik
    • 대한수학회논문집
    • /
    • 제15권1호
    • /
    • pp.155-172
    • /
    • 2000
  • Mode interactions at Unstable fluid interfaces induced by a shock wave (Richtmyer-Meshkov Instability) are studied both analytically and numerically. The analytical approach is based on a potential flow model with source singularities in incompressible fluids of infinite density ratio. The potential flow model shows that a single bubble has a decaying growth rates at late time and an asymptotic constant radius. Bubble interactions, bubbles of different radii propagates with different velocities and the leading bubbles grow in size at the expense of their neighboring bubbles, are predicted by the potential flow model. This phenomenon is validated by full numerical simulations of the Richtmyer-Meshkov instability in compressible fluids for initial multi-frequency perturbations on the unstable interface.

  • PDF

점성포텐셜유동을 이용한 이상유동장의 표면안정성 해석 (Stability analysis of gas-liquid interface using viscous potential flow)

  • 김형준;권세진
    • 대한기계학회:학술대회논문집
    • /
    • 대한기계학회 2007년도 춘계학술대회B
    • /
    • pp.3033-3038
    • /
    • 2007
  • In this research, Rayleigh instability of gas-liquid flow in annular pipe is studied in film boiling using viscous potential flow. Viscous potential flow is a kind of approximation of gas-liquid interface considering velocity field as potential including viscosity. A dispersion relation is obtained including the effect of heat and mass transfer and viscosity. New expression for dispersion relation in film boiling and critical wave number is obtained. Viscosity and heat and mass transfer have a stabilizing effect on instability and its effect appears in maximum growth rate and critical wave number. And the existence of marginal stability region is shown.

  • PDF

수직평판 사이를 흐르는 두 점성유체의 밀도차에 의한 계면의 새로운 불안정성 연구 (A study of a new interfacial instability between two vertical fluid layers of different densities)

  • 이철우;주상우;이상천
    • 대한기계학회논문집B
    • /
    • 제20권12호
    • /
    • pp.3949-3959
    • /
    • 1996
  • A new interfacial instability between two vertical fluid layers of different densities is studied. The two layers are flowing between two parallel vertical plates vertically upward or downward, forming counter- or concurrent flows. In order to extend the study to highly-nonlinear regime in future studies, a nonlinear interface evolution equation is derived, and the stability analysis is performed based on the evolution equation. Among the parameters studies are the ratios of the fluid densities and layer thicknesses and the net flow rate.

HIGH-ORDER POTENTIAL FLOW MODELS FOR HYDRODYNAMIC UNSTABLE INTERFACE

  • Sohn, Sung-Ik
    • Journal of the Korean Society for Industrial and Applied Mathematics
    • /
    • 제16권4호
    • /
    • pp.225-234
    • /
    • 2012
  • We present two high-order potential flow models for the evolution of the interface in the Rayleigh-Taylor instability in two dimensions. One is the source-flow model and the other is the Layzer-type model which is based on an analytic potential. The late-time asymptotic solution of the source-flow model for arbitrary density jump is obtained. The asymptotic bubble curvature is found to be independent to the density jump of the fluids. We also give the time-evolution solutions of the two models by integrating equations numerically. We show that the two high-order models give more accurate solutions for the bubble evolution than their low-order models, but the solution of the source-flow model agrees much better with the numerical solution than the Layzer model.

게이트 산화막 어닐링을 이용한 서브 마이크론 PMOS 트랜지스터의 NBTI 향상 (Impact of Post Gate Oxidation Anneal on Negative Bias Temperature Instability of Deep Submicron PMOSFETs)

  • 김영민
    • 한국전기전자재료학회논문지
    • /
    • 제16권3호
    • /
    • pp.181-185
    • /
    • 2003
  • Influence of post gate oxidation anneal on Negative Bias Temperature Instability (NBTI) of PMOSFE has been investigated. At oxidation anneal temperature raised above 950$^{\circ}$C, a significant improvement of NBTI was observed which enables to reduce PMO V$\_$th/ shift occurred during a Bias Temperature (BT) stress. The high temperature anneal appears to suppress charge generations inside the gate oxide and near the silicon oxide interface during the BT stress. By measuring band-to-band tunneling currents and subthreshold slopes, reduction of oxide trapped charges and interface states at the high temperature oxidation anneal was confirmed.

Fabrication of Layered Cu-Fe-Cu Structure by Cold Consolidation of Powders using High-pressure Torsion

  • Asghari-Rad, Peyman;Choi, Yeon Taek;Nguyen, Nhung Thi-Cam;Sathiyamoorthi, Praveen;Kim, Hyoung Seop
    • 한국분말재료학회지
    • /
    • 제28권4호
    • /
    • pp.287-292
    • /
    • 2021
  • In this study, the layered structures of immiscible Fe and Cu metals were employed to investigate the interface evolution through solid-state mixing. The pure Fe and Cu powders were cold-consolidated by high-pressure torsion (HPT) to fabricate a layered Cu-Fe-Cu structure. The microstructural evolutions and flow of immiscible Fe and Cu metals were investigated following different iterations of HPT processing. The results indicate that the HPT-processed sample following four iterations showed a sharp chemical boundary between the Fe and Cu layers. In addition, the Cu powders exhibited perfect consolidation through HPT processing. However, the Fe layer contained many microcracks. After 20 iterations of HPT, the shear strain generated by HPT produced interface instability, which caused the initial layered structure to disappear.

박막의 두께가 비정질 InGaZnO 무접합 트랜지스터의 소자 불안정성에 미치는 영향 (Effects of thin-film thickness on device instability of amorphous InGaZnO junctionless transistors)

  • 전종석;조성호;최혜지;박종태
    • 한국정보통신학회논문지
    • /
    • 제21권9호
    • /
    • pp.1627-1634
    • /
    • 2017
  • 비정질 InGaZnO 박막 두께가 다른 무접합 트랜지스터를 제작하고 두께에 따른 양과 음의 게이트 스트레스 전압 및 빛을 비춘 상태에서 소자 불안정성을 분석하였다. 채널 박막 두께가 얇을수록 게이트 스트레스 및 빛이 인가된 상태에서 문턱전압 및 드레인 전류 변화가 큰 것을 알 수 있었다. 그 원인을 stretched-exponential 모델과 소자 시뮬레이션을 수행하여 설명하였다. 박막이 얇을수록 캐리어 트랩핑 시간이 짧기 때문에 전자나 홀이 빨리 활성화되는 것과 채널 박막의 뒷부분에서 채널의 수직 전계가 증가하여 전자나 홀을 많이 축적할 수 있는 것으로 설명하였다. IGZO 무접합 트랜지스터 제작에서 채널 박막의 두께를 결정할 때 채널 박막 두께가 얇을수록 소자 불안정성이 큰 것을 고려해야 됨을 알 수 있다.

Reliability Aging of Oxide Integrity on Low Temperature Polycrystalline Silicon TFTs

  • Chen, Chih-Chiang;Hung, Wen-Yu;Chen, Pi-Fu;Yeh, Yung-Hui
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
    • /
    • pp.515-518
    • /
    • 2002
  • In this paper, we demonstrate the impact of oxide interface-state on low temperature poly-Si TFTs. The TFTs with interface-state exhibit poor performance and serious degradation under hot carrier and gate bias stress. Our results indicate that the worse oxide integrity cause initial characteristic shift and device instability.

  • PDF

원형관내의 액체-액체 계면에 대한 전기습윤 현상의 동적 거동 (Dynamics of Electrowetting of a Liquid-Liquid Interface in a Cylindrical Tube)

  • 강관형;정원영
    • 유체기계공업학회:학술대회논문집
    • /
    • 유체기계공업학회 2006년 제4회 한국유체공학학술대회 논문집
    • /
    • pp.557-560
    • /
    • 2006
  • The contact angle of a meniscus and a droplet can be controlled by using electrowetting phenomena. We investigated the dynamic aspect of electrowetting for an oil-electrolyte interface formed inside a closed glass tube. A step input voltage is applied and the subsequent motion of the interface is recorded by a high-speed camera. A kind of capillary instability is observed near the three-phase contact line, which could degrade the reliability of device utilizing electrowetting such as electrowetting liquid lens. The dynamics of interface motion for different input voltages and the fluid viscosities are analyzed and discussed based on the experimental results.

  • PDF

등온 수평 평판 위를 지나는 층류유동 의 열적 불안전성 및 열전달 상관관계 (Thermal Instability and Heat Transfer Correlations of Laminar Flow over Isothermal Horizontal Flat Plate)

  • 박병완;유정열;최창균;노승탁
    • 대한기계학회논문집
    • /
    • 제9권5호
    • /
    • pp.613-620
    • /
    • 1985
  • 본 연구의 목적은 수평 Blasius유동의 열적 불안정성 문제에서 유동방향 좌표 에도 의존하는 교란양을 최초로 도입함으로써 보다 합리적인 안정성 해석을 수행하고 그 결과를 기존의 실험적 및 이론적인 자료들과 비교하며 이를 토대로 한 보다 실제적 인 열전달 상관관계를 얻고자 하는데 있다.