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http://dx.doi.org/10.6109/jkiice.2017.21.9.1627

Effects of thin-film thickness on device instability of amorphous InGaZnO junctionless transistors  

Jeon, Jong Seok (Department of Electronic Engineering, Incheon National University)
Jo, Seong Ho (Department of Electronic Engineering, Incheon National University)
Choi, Hye Ji (Department of Electronic Engineering, Incheon National University)
Park, Jong Tae (Department of Electronic Engineering, Incheon National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.21, no.9, 2017 , pp. 1627-1634 More about this Journal
Abstract
In this work, a junctionless transistor with different film thickness of amorphous InGaZnO has been fabricated and it's instability has been analyzed with different film thickness under positive and negative gate stress as well as light illumination. It was found that the threshold voltage shift and the variation of drain current have been increased with decrease of film thickness under the condition of gate stress and light illumination. The reasons for the observed results have been explained by stretched-exponential model and device simulation. Due to the reduced carrier trapping time with decrease of film thickness, electrons and holes can be activated easily. Due to the increase of vertical channel electric field reaching the back interface with decrease of film thickness, more electrons and holes can be accumulated in back interface. When one decides the film thickness for the fabrication of junctionless transistor, the more significant device instability with decrease of film thickness should be consdered.
Keywords
InGaZnO thin film transistor; Junctionless transistor; Device instability; Thin film thickness;
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Times Cited By KSCI : 2  (Citation Analysis)
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