• Communications of the Korean Mathematical Society
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• v.15 no.1
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• pp.155-172
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• 2000

Mode interactions at Unstable fluid interfaces induced by a shock wave (Richtmyer-Meshkov Instability) are studied both analytically and numerically. The analytical approach is based on a potential flow model with source singularities in incompressible fluids of infinite density ratio. The potential flow model shows that a single bubble has a decaying growth rates at late time and an asymptotic constant radius. Bubble interactions, bubbles of different radii propagates with different velocities and the leading bubbles grow in size at the expense of their neighboring bubbles, are predicted by the potential flow model. This phenomenon is validated by full numerical simulations of the Richtmyer-Meshkov instability in compressible fluids for initial multi-frequency perturbations on the unstable interface.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.3033-3038
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• 2007

In this research, Rayleigh instability of gas-liquid flow in annular pipe is studied in film boiling using viscous potential flow. Viscous potential flow is a kind of approximation of gas-liquid interface considering velocity field as potential including viscosity. A dispersion relation is obtained including the effect of heat and mass transfer and viscosity. New expression for dispersion relation in film boiling and critical wave number is obtained. Viscosity and heat and mass transfer have a stabilizing effect on instability and its effect appears in maximum growth rate and critical wave number. And the existence of marginal stability region is shown.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.12
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• pp.3949-3959
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• 1996

A new interfacial instability between two vertical fluid layers of different densities is studied. The two layers are flowing between two parallel vertical plates vertically upward or downward, forming counter- or concurrent flows. In order to extend the study to highly-nonlinear regime in future studies, a nonlinear interface evolution equation is derived, and the stability analysis is performed based on the evolution equation. Among the parameters studies are the ratios of the fluid densities and layer thicknesses and the net flow rate.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.16 no.4
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• pp.225-234
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• 2012

We present two high-order potential flow models for the evolution of the interface in the Rayleigh-Taylor instability in two dimensions. One is the source-flow model and the other is the Layzer-type model which is based on an analytic potential. The late-time asymptotic solution of the source-flow model for arbitrary density jump is obtained. The asymptotic bubble curvature is found to be independent to the density jump of the fluids. We also give the time-evolution solutions of the two models by integrating equations numerically. We show that the two high-order models give more accurate solutions for the bubble evolution than their low-order models, but the solution of the source-flow model agrees much better with the numerical solution than the Layzer model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.181-185
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• 2003

Influence of post gate oxidation anneal on Negative Bias Temperature Instability (NBTI) of PMOSFE has been investigated. At oxidation anneal temperature raised above 950$^{\circ}$C, a significant improvement of NBTI was observed which enables to reduce PMO V$\_$th/ shift occurred during a Bias Temperature (BT) stress. The high temperature anneal appears to suppress charge generations inside the gate oxide and near the silicon oxide interface during the BT stress. By measuring band-to-band tunneling currents and subthreshold slopes, reduction of oxide trapped charges and interface states at the high temperature oxidation anneal was confirmed.

• Journal of Powder Materials
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• v.28 no.4
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• pp.287-292
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• 2021

In this study, the layered structures of immiscible Fe and Cu metals were employed to investigate the interface evolution through solid-state mixing. The pure Fe and Cu powders were cold-consolidated by high-pressure torsion (HPT) to fabricate a layered Cu-Fe-Cu structure. The microstructural evolutions and flow of immiscible Fe and Cu metals were investigated following different iterations of HPT processing. The results indicate that the HPT-processed sample following four iterations showed a sharp chemical boundary between the Fe and Cu layers. In addition, the Cu powders exhibited perfect consolidation through HPT processing. However, the Fe layer contained many microcracks. After 20 iterations of HPT, the shear strain generated by HPT produced interface instability, which caused the initial layered structure to disappear.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.9
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• pp.1627-1634
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• 2017

In this work, a junctionless transistor with different film thickness of amorphous InGaZnO has been fabricated and it's instability has been analyzed with different film thickness under positive and negative gate stress as well as light illumination. It was found that the threshold voltage shift and the variation of drain current have been increased with decrease of film thickness under the condition of gate stress and light illumination. The reasons for the observed results have been explained by stretched-exponential model and device simulation. Due to the reduced carrier trapping time with decrease of film thickness, electrons and holes can be activated easily. Due to the increase of vertical channel electric field reaching the back interface with decrease of film thickness, more electrons and holes can be accumulated in back interface. When one decides the film thickness for the fabrication of junctionless transistor, the more significant device instability with decrease of film thickness should be consdered.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.515-518
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• 2002

In this paper, we demonstrate the impact of oxide interface-state on low temperature poly-Si TFTs. The TFTs with interface-state exhibit poor performance and serious degradation under hot carrier and gate bias stress. Our results indicate that the worse oxide integrity cause initial characteristic shift and device instability.

• 유체기계공업학회:학술대회논문집
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• 2006.08a
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• pp.557-560
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• 2006

The contact angle of a meniscus and a droplet can be controlled by using electrowetting phenomena. We investigated the dynamic aspect of electrowetting for an oil-electrolyte interface formed inside a closed glass tube. A step input voltage is applied and the subsequent motion of the interface is recorded by a high-speed camera. A kind of capillary instability is observed near the three-phase contact line, which could degrade the reliability of device utilizing electrowetting such as electrowetting liquid lens. The dynamics of interface motion for different input voltages and the fluid viscosities are analyzed and discussed based on the experimental results.

• Transactions of the Korean Society of Mechanical Engineers
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• v.9 no.5
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• pp.613-620
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• 1985

An analysis on the thermal instability of horizontal Blasius flow in the form of longitudinal vortices has been carried out by introducing the 3-dimensional spatial dependence of the disturbance quantities. The stability problem has been simplified significantly by considering the limiting case of infinite Prandtl number and by skilfully replacing the boundary conditions at infinity with the interface conditions at the edge of the thermal boundary layer (or by simply confining the thermal disturbances in the thermal boundary layer). The advantage of this approach is that the critical values marking the onset of thermal instability can be readily obtained as solutions of the eigenvalues problems formulated by a 6*6(or a 5*5) determinant. Present analysis provides reasonable explanations on the existing experimental and theoretical data. Especially, the heat transfer correlation based on the present analysis agrees well with the existing experimental data.