• Journal of Industrial and Engineering Chemistry
• /
• v.67
• /
• pp.486-496
• /
• 2018

Bimetallic Pd@Ni nanostructure exhibited enhanced co-catalytic activity for the selective hydrogenation of benzaldehyde compare to their monometallic counterparts. Impregnation of these mono/bimetallic nanostructures on mesoporous $TiO_2$ leads to several surface modifications. The bimetallic PNT-3 ($Pd_3@Ni_1/mTiO_2$) exhibited large surface area ($212m^2g^{-1}$), and low recombination rate of the charge carriers ($e^--h^+$). The hydrogenation reaction was analyzed under controlled experiments. It was observed that under UV-light irradiations and saturated hydrogen atmosphere the bimetallic PNT-3 photocatalyst display higher rate constant $k=5.31{\times}10^{-1}h^{-1}$ owing to reduction in the barrier height which leads to efficiently transfer of electron at bimetallic/$mTiO_2$ interface.

• Korean Journal of Materials Research
• /
• v.29 no.8
• /
• pp.463-468
• /
• 2019

The electrical and interfacial properties of $HfO_2/Al_2O_3$ and $Al_2O_3/HfO_2$ dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance-voltage(C-V) and current-voltage(I-V) measurements. In the C-V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the $HfO_2/Al_2O_3$ sample. Higher frequency dispersion in the inversion region is observed for the $Al_2O_3/HfO_2$ sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the $Al_2O_3/HfO_2$ sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the $Al_2O_3/HfO_2$ sample, which are not observed for the $Al_2O_3/HfO_2$ sample. I-V measurements show a reduction of leakage current of about three orders of magnitude for the $HfO_2/Al_2O_3$ sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the $HfO_2/Al_2O_3$ sample. Based on these results, it is suggested that $HfO_2/Al_2O_3$ is a better dielectric stack than $Al_2O_3/HfO_2$ on AlN/p-Ge interface.

• Journal of the Korean Ceramic Society
• /
• v.37 no.2
• /
• pp.186-193
• /
• 2000

Effects of 1.0 mol% CoO addition on sintering and the electrical properties of ZnO-Bi2O3-Sb2O3(ZBS) varistor system with 3.0 mol% co-addition of Sb2O3 and Bi2O3 at various Sb/Bi ratio (0.5, 1.0, and 2.0) were investigated. Cobalt had little influence on the liquid-phase formation and the pyrochlore decomposition temepratures of ZBS, while densification was mainly dependent on Sb/Bi ratio: when Sb/Bi=0.5, excess Bi2O3 irrelevant to the formation of pyrochore(Zn2Sb3Bi3O14) forms eutectic liquid at ~75$0^{\circ}C$ which promotes densification and grain growth; with Sb/Bi=2.0, the second phase Zn7Sb2O12 formed by excess Sb2O3 irrelevant to the formation of the pyrochlore retards densification up to ~100$0^{\circ}C$. These phases caused the coarsening and uneven distribution of the second phase particles on the grain boundaries of ZnO above the pyrochlore decomposition temperature(~105$0^{\circ}C$), which led to broad size dist-ribution of ZnO; the specimen with Sb/Bi=1.0 showed homogeneous microstructure compared with the others, which enabled improved varistor characteristics. Doping of Co increased the nonlinearity and the potential barrier height of ZBS, which is thought to stem from improved sintering behavior such as homogenized microstructure due to size reduction and even distribution of the second phase and suppressed volatility of Bi2O3, as well as the improvement in the potential barrier structure via increased donor and interface electron trap densities.

• Korean Journal of Materials Research
• /
• v.27 no.1
• /
• pp.48-52
• /
• 2017

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

• The Journal of Korean Academy of Prosthodontics
• /
• v.35 no.1
• /
• pp.43-66
• /
• 1997

Dental implant may be immediately placed in postextraction socket which has alveolar bone defect. The purpose of this study was to compare the bone regeneration and bone quality around defects adjacent to implants that were placed into extraction sockets according to EFEB, GTAM barrier and GTAM barrier with DFDB. Mandibular P2, P3 and P4 were extracted bilaterally in dogs, and buccal defects were created about 4mm in depth and 3.3mm in width. Screwed pure titanium implants, 3.8mm in diameter and 10mm in length, were placed into the extraction sockets. The experimental groups were divided into four groups : the G group was covered with a GTAM barrier on the defective area, the D+G group was filled with DFEB and covered with a GTAM barrier, the D group was filled with DFDB only and the control group was sutured without any special treatment on the defective area. The experimental animals were killed after 12 weeks and specimens were prepared for light microscopic evaluation and fluorescent dyes were administered daily for 2 weeks after implantation, and injected on the 4th and 11th week for fluorescent microscopic examination to observe new bone formation and bone remodeling. The new Bone height of the buccal defect was measured and compared with the another for bone gain and the removal torque for the implant was measured for the comparison of bone density and bone-implant osseointegration. Results obtained were as follows : 1. Experimental groups showed bone regeneration in oder from D+G, G, D group and control. D+G and G group was significantly from D group and control(P<0.01). 2. In the defective area of control the regenerated alveolar bone showed poorly developed lamellated structure and fibrous tissue intervention into the bone-implant interface but the others showed well developed lamellated structure and osseointegration. 3. All implant groups showed no significaant difference in the removal torque for implant(P>0.05) These results suggest that immediate implants placed in defective sockets were successfully osseointegrated and utilizing placed in defective sockets were successfully osseointegrated and utilizing not only the combination of GTAM and DFDB but also only the GTAM was favorable for the predictable regeneration of the defective area.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.8
• /
• pp.481-485
• /
• 2015

We investigated the effects of annealing on the electrical and thermal properties of ZTO/4H-SiC heterojunction diodes. A ZTO thin film layer was grown on p-type 4H-SiC substrate by using solution process. The ZTO/SiC heterojunction structures annealed at $500^{\circ}C$ show that $I_{on}/I_{off}$ increases from ${\sim}5.13{\times}10^7$ to ${\sim}1.11{\times}10^9$ owing to the increased electron concentration of ZTO layer as confirmed by capacitance-voltage characteristics. In addition, the electrical characterization of ZTO/SiC heterojunction has been carried out in the temperature range of 300~500 K. When the measurement temperature increased from 300 K to 500 K, the reverse current variation of annealed device is higher than as-grown device, which is related to barrier height in the ZTO/SiC interface. It is shown that annealing process is possible to control the electrical characteristics of ZTO/SiC heterojunction diode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.11
• /
• pp.1044-1049
• /
• 2006

We reported on characteristics of the fluorescent OLED fabricated on commercial ITO/glass and BCS grown IZO/glass substrate, respectively. The amorphous IZO anode film grown by box cathode sputtering(BCS) exhibited similar electrical and optical characteristics to commercial ITO anode even though it was deposited at room temperature. In addition, the amorphous IZO anode showed higher workfunction (5.2 eV) than that of the commercial ITO anode (5.0 eV) after ozone treatment for 10 min. Furthermore, fluorescent OLED fabricated on amorphous IZO anode film showed improved current-voltage-luminance characteristics, external quantum efficiency and power efficiency en contrast with fluorescent OLED fabricated on commercial ITO anode film. It was thought that smooth surface and high workfunction of amorphous IZO anode lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers.

• Proceedings of the KIEE Conference
• /
• 1997.07d
• /
• pp.1361-1363
• /
• 1997

Zinc oxide-based MOV was fabricated with $SiO_2$ additive ranging from 0.5 to 4.0 mol%, and the microstructure and electrical characteristics were investigated. $Zn_2SiO_4$ phase formed by $SiO_2$ additive was distributed at ZnO grains, grain boundaries, and multiple grain junctions. As the content of $SiO_2$ additive increases, average grain size decreased from 40.6 to $26.9{\mu}m$ due to the Pinning effect by $Zn_2SiO_4$ at grain boundaries Breakdown voltage and nonlinear exponent increased, and leakage current decreased in the range of $11.2{\sim}6.14{\mu}A$ with an increasing $SiO_2$. Donor concentration and interface state density decreased, and barrier height increased in the range of $0.71{\sim}1.04eV$ with an increasing $SiO_2$. While, as the content of $SiO_2$ additive, apparent dielectric constant decreased, peak frequency of dissipation factor decreased in the range of $6.45{\times}10^5{\sim}3.00{\times}10^5Hz$, and dissipation peak was $0.31{\sim}0.22$ at Peak frequency.

• Electrical & Electronic Materials
• /
• v.10 no.7
• /
• pp.659-667
• /
• 1997

The influence of SiO$_2$on the microstructure and electrical properties of zinc oxide varistor was investigated. Zn$_2$SiO$_4$third phase in the sintered body was found at grain boundaries, multiple grain junctions, and occasionally within ZnO grains. This phase acted as a grain growth inhibitor, which retard the grain growth of the ZnO matrix by impeding migration on the grain boundaries. As SiO$_2$ addition increases, average grain size decreased from 40.6${\mu}{\textrm}{m}$ to 26.9${\mu}{\textrm}{m}$ due to the pinning effect by Zn$_2$SiO$_4$ and drag effect by Si segregation at grain boundaries, the breakdown voltage consequently increased. When SiO$_2$ addition is increased, interface state density decreased, however, the barrier height increased by decrease of donor concentration, as a result, the nonlinear exponent increased and leakage current decreased. While, as SiO$_2$ addition increase, it was found that the apparent dielectric loss factor shows a tendency of decrease. Wholly, electrical properties of zinc oxide varistor can be said to be improved by SiO$_2$addition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.388-389
• /
• 2007

In this work, Organic Light Emitting Diodes using Aluminum-Oxynitride as a hole-injecting interfacial have been fabricated. This interfacial layer is inserted at the ITO/N,NV-diphenyl-N, NV-bis(3-methylphenyl)-1,1V-diphenyl-4,4V-diamine (TPD) interface. The brightness and efficiency of the device with the AION film is higher than that of the device without it. The enhancements are attributed to an improved balance of hole and electron injections due to the energy level realignment and the change in carrier tunneling probability by the interfacial layer.