• 한국전기전자재료학회논문지
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• 제28권1호
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• pp.28-33
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• 2015

The needle electrode is inserted into the cross-linked polyethylene(XLPE) which is the ultra high voltage cable for electric power. By changing the tilt of the needle electrode, we investigated how the void and the thickness of the insulating layer influence the partial discharge(PD) characteristics and the insulating breakdown. In order to investigate the PD characteristics, The XLPE cable was used to the specimens and the tungsten electrode was used with the needle electrode. And the inner semi-conductive layer material of XLPE cable was used with the negative electrode by bonding with the use of conduction tape. The size of the specimens was manufactured to be $16{\times}40{\times}30[mm^3]$. We confirmed the effect on changing the PD characteristics according to the changing voltage and the tilt of the electrode after applying the voltage on the electrode from 1[kV] to 40[kV] at room temperature. In the PD characteristics, it was confirmed that the PD current of air void specimens with tilt was unstable more than that of no void specimens with tilt. It was also confirmed that the breakdown voltage was decreased because the effect of air void is more active than the change of the needle electrode tilt in the specimen with air void inside the insulation.

• 한국재료학회지
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• 제27권1호
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• pp.32-38
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• 2017

Insulating $TaN_x$ films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and $N_2+H_2$ mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a $Pt/TaN_x/Pt$ stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the PooleFrenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick $TaN_x$ films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution ($O_N$) and interstitial nitrogen ($N_i$) in the $TaN_x$ films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of $TaN_x$ film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.

• Transactions on Electrical and Electronic Materials
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• 제11권1호
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• pp.42-47
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• 2010

Polymer insulating materials such as cross linked polyethylene (XLPE) are employed in electric cables used for extra high voltage. These materials can degrade due to chemical, mechanical and electric stress, possibly caused by voids, the presence of extrinsic materials and protrusions. Therefore, this study measured discharge patterns, discharge phase angle, quantity and occurrence frequency as well as changes in XLPE under different temperatures and applied voltages. To quantitatively analyze the irregular partial discharge patterns measured, the discharge patterns were examined using a statistical program. A three layer sample was fabricated, wherein the upper and lower layers were composed of non-void XLPE, while the middle layer was composed of an air void and copper particles. After heating to room temperature and $50^{\circ}C$ and $80^{\circ}C$ in silicone oil, partial discharge characteristics were studied by increasing the voltage from the inception voltage to the breakdown voltage. Partial discharge statistical analysis showed that when the K-means clustering was carried out at 9 kV to determine the void discharge characteristics, the amount discharged at low temperatures was small but when the temperature was increased to $80^{\circ}C$, the discharge amount increased to be 5.7 times more than that at room temperature because electric charge injection became easier. An analysis of the kurtosis and the skewness confirmed that positive and negative polarity had counterclockwise and clockwise clustering distribution, respectively. When 5 kV was applied to copper particles, the K-means was conducted as the temperature changed from $50^{\circ}C$ to $80^{\circ}C$. The amount of charge at a positive polarity increased 20.3% and the amount of charge at a negative polarity increased 54.9%. The clustering distribution of a positive polarity and negative polarity showed a straight line in the kurtosis and skewness analyses.

• 한국건축시공학회지
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• 제13권6호
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• pp.513-521
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• 2013

This study aimed to examine whether heat curing methods of concrete subjected to $-10^{\circ}C$ could be effective by varying the combination of heating cable and surface heat insulations. Three different concrete specimens incorporating 30% fly ash with 50% W/B were fabricated to simulate wall, column and slab members with dimensions of $1600{\times}800{\times}200$ mm for slab, $800{\times}600{\times}200$ mm for wall and $800{\times}800{\times}800$ mm for column. For heat curing combinations, Type-1 specimens applied PE film for slab, plywood for wall and column curing. Type-2 specimens applied double layer bubble sheet (2LB) and heating coil for slab, and 50 mm styrofoam for wall and column curing. Type-3 specimen applied 2LB for slab, electrical heating mat for wall and column inside heating enclosure. The test results revealed that the temperature of Type 1 specimen dropped below $0^{\circ}C$ beginning at 48 hours after placement due to its poor heat insulating capability. Type 2 and 3 specimens maintained a temperature of around $5{\sim}10^{\circ}C$ after placement due to favorable heat insulating and thermal resistance.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.113-119
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• 2005

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.478-483
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• 2014

We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of AlGaN/GaN HEFTs.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2019년도 추계 학술논문 발표대회
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• pp.87-88
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• 2019

Research has been conducted in many fields for the zero energy of domestic buildings. Among them, the development of insulation has become an essential element. Accordingly, researches are being made to improve the performance of organic insulating materials, and PF boards having the lowest thermal conductivity among organic insulating materials have been in the spotlight. However, problems have arisen due to the problems of durability of insulation materials such as PF boards and past acidification, and the durability of insulation materials is deteriorated when moisture or water enters due to crack gaps during the insulation of the basement layer or the external insulation method. In regard to the durability of the insulation, when the organic insulators of different kinds were placed in water, the pH was weakly basic in all organic insulation materials except PF, and the PF was about 4 pH. As a result, the PF should be continuously reviewed, and further analysis should be carried out to determine what causes acidification.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.229-229
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• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

• 교육녹색환경연구
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• 제4권4호
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• pp.19-24
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• 2004

The thermal effect of a transparent insulated opake wall with solar energy was investigated theoretically. The heat gain through transparent insulated opake wall was studied for relative simple conditions. The stationary heat transport effect was studied for layer which is built on the opake wall. This study shows that a relative low solar radiation intensity causes a great heat reduction through the transparent insulated opake wall. Because the transparent insulation layer is mostly transparent to solar radiation, it is opaque to heat radiation.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1145-1148
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• 2008

The present status and trend of oxide phosphor thin-film development for thin-film electroluminescent (TFEL) device application are presented in this paper. Recently, several newly developed types of bendable or bendable see-through oxide TFEL lamps have been fabricated using the TFEL technology with a newly developed bendable ceramic sheet, glass sheet or sapphire sheet substrate, which has become available on the market. Stable operation at high temperatures was obtained in double-insulating-layer-type TFEL lamps fabricated with a $Zn_2Si_{0.6}Ge_{0.}4O_4$:Mn thin-film emitting layer forming on translucent or transparent bendable sheet substrates.