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http://dx.doi.org/10.3740/MRSK.2017.27.1.32

Electrical Conduction Mechanism in the Insulating TaNx Film  

Ryu, Sungyeon (Department of Materials Science and Engineering, Seoul National University of Science and Technology)
Choi, Byung Joon (Department of Materials Science and Engineering, Seoul National University of Science and Technology)
Publication Information
Korean Journal of Materials Research / v.27, no.1, 2017 , pp. 32-38 More about this Journal
Abstract
Insulating $TaN_x$ films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and $N_2+H_2$ mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a $Pt/TaN_x/Pt$ stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the PooleFrenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick $TaN_x$ films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution ($O_N$) and interstitial nitrogen ($N_i$) in the $TaN_x$ films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of $TaN_x$ film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.
Keywords
TaN film; electrical transport; Poole-Frenkel emission; plasma enhanced atomic layer deposition;
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