• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.11
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• pp.63-70
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• 2001

We demonstrate the MMIC (monolithic microwave integrated circuit) frequency doublers generating stable and low-cost 29 GHz local oscillator signals from 14.5 GHz input signals. These devices were designed and fabricated by using the M MIC integration process of $0.1\;{\mu}m$ gate-length PHEMTs (pseudomorphic high electron mobility transistors) and passive components. The measurements showed S11 or -9.2 dB at 145 GHz, S22 of -18.6 dG at 29 GHz and a minimum conversion loss of 18.2 dB at 14.5 GHz with an input power or 6 dBm. Fundamental signal of 14.5 GHz were suppressed below 15.2 dBe compared to the second harmonic signal at the output port, and the isolation characteristics of fundamental signal between the input and the output port were maintained above :i0 dB in the frequency range 10.5 GHz to 18.5 GHz. The chip size of the fabricated MMIC frequency doubler is $1.5{\times}2.2\;mm^2$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.12
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• pp.8643-8648
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• 2015

In this paper presents the design and demonstrate 8 W 3-stage HPA(High Power Amplifier) MMIC(Monolithic Microwave Integrated Circuits) for Ka-band down link satellite communications payload system at 19.5 GHz ~ 22 GHz frequency band. The HPA MMIC consist of 3-stage GaN HEMT(Hight Electron Mobility Transistors). The gate periphery of $1^{st}$ stage, $2^{nd}$ stage and output stage is determined $8{\times}50{\times}2$ um, $8{\times}50{\times}4$ um and $8{\times}50{\times}8$ um, respectively. The fabricated HPA MMIC shows size $3,400{\times}3,200um^2$, small signal gain over 29.6 dB, input matching -8.2 dB, output matching -9.7 dB, output power 39.1 dBm and PAE 25.3 % by using 0.15 um GaN technology at 20 V supply voltage in 19.5~22 GHz frequency band. Therefore, this HPA MMIC is believed to be adaptable Ka-band satellite communication payloads down link system.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.34 no.4
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• pp.1227-1240
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• 2014

Abandoned mines often cause environmental problems, such as alteration of landscape, metal contamination, and landslides due to a heavy rainfall. Geotechnical and rheological tests were performed on waste materials corrected from Imgi waste rock dump, located in Busan Metropolitan City. Debris flow mobility was examined with the help of 1-D BING model which was often simulated in both subaerial and subaqueous environments. To determine flow curve, we used a vane-penetrated rheometer. The shear stress (${\tau}$)-shear rate (${\dot{\gamma}}$) and viscosity(${\eta}$)-shear rate (${\dot{\gamma}}$) relationships were plotted using a shear stress control mode. Well-known rheological models, such as Bingham, bilinear, Herschel-Bulkley, Power-law, and Papanastasiou concepts, were compared to the rheological data. From the test results, we found that the tested waste materials exhibited a typical shear shinning behavior in ${\tau}$-${\dot{\gamma}}$ and and ${\eta}$-${\dot{\gamma}}$ plots, but the Bingham behavior is often observed when the water contents increased. The test results show that experimental data are in good agreement with rheological models in the post-failure stage during shearing. Based on the rheological properties (i.e., Bingham yield stress and viscosity as a function of the volumetric concentration of sediment) of waste materials, initial flowing shape (5 m, 10 m, and 15 m) and yield stress (100 Pa, 200 Pa, 300 Pa, and 500 Pa) were input to simulate the debris flow motion. As a result, the runout distance and front velocity of debris flow are in inverse propositional to yield stress. In particular, when the yield stress is less than 500 Pa, most of failed masses can flow into the stream, resulting in a water contamination.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.3
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• pp.421-432
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• 2020

This paper proposes a 2-kW solid-state power amplifier (SSPA) developed by employing power amplifier pallets designed using gallium-nitride high electron mobility transistors, which is used in S-band military radars and to replace existing traveling-wave tube amplifier (TWTA). The SSPA consists of a high-power amplifier module, which combines eight power amplifier pallets, a drive amplifier module, a digital control module, and a power supply unit. First, the amplifier module and component were integrated into a small package to account for space limitations; next, an on-board harmonic filter was fabricated to reject spurious components; and finally, an auto gain control system was designed for various duty ratios because recent military radar systems are all active phase radars using the pulse operation mode. The developed SSPA exhibited a max gain of 48 dB and an output power ranging between 63-63.6 dBm at a frequency band of 3.1 to 3.5 GHz. The auto gain control function showed that the output power is regulated around 63 dBm despite the fluctuation of the input power from 15-20 dBm. Finally, reliability of the developed system was verified through a temperature environment test for nine hours at high (55 ℃) / low (-40℃) temperature profile in accordance with military standard 810. The developed SSPA show better performance such as light weight, high output, high gain, various safety function, low repair cost and short repair time than existing TWTA.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.7-12
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• 2004

In this paper, CPW wideband distributed amplifier was designed and fabricated using 0.1 $\mum$ InGaAs/InAlAs/GaAs Metamorphic HEMT(High Electron Mobility Transistor). The DC characteristics of MHEMT are 442 mA/mm of drain current density, 409 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 140 GHz and the maximum oscillation frequency(fmax) is 447 GHz. The distributed amplifier was designed using 0.1 $\mum$ MHEMT and CPW technology. We designed the structure of CPW curve, tee and cross to analyze the discontinuity characteristics of the CPW line. The MIMIC circuit patterns were optimized electromagnetic field through momentum. The designed distributed amplifier was fabricated using our MIMIC standard process. The measured results show S21 gain of above 6 dB from DC to 45 GHz. Input reflection coefficient S11 of -10 dB, and output reflection coefficient S22 of -7 dB at 45 GHz, respectively. The chip size of the fabricated CPW distributed amplifier is 2.0 mm$\times$l.2 mm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.4
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• pp.394-402
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• 2013

This paper presents design, fabrication and ruggedness test of switching-mode power amplifier using GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) for S-band radar applications. The power amplifier is designed to Class-F for high efficiency. The input signal for the measurement of the power amplifier is pulse signal at $100{\mu}s$ pulse width and duty cycle of 10 %. The measurement results of the fabricated Class-F power amplifier are a power gain of 10.8 dB, an output power of 40.8 dBm, a power added efficiency(PAE) of 54.2 %, and a drain efficiency of 62.6 %, at the center frequency. We proposed reliability test set-up of a power amplifier for ruggedness test. And we measured output power and efficiency according to VSWR(Voltage Standing Wave Ratio) variation. The designed power amplifier achieved output power of 32.6~41.1 dBm and drain efficiency of 23.4~63 % by changing VSWR, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.2C
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• pp.95-112
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• 2007

Spatial Multiplexing techniques, which is a kind of Multiple antenna techniques, provide high data transmission rate by transmitting independent data at different transmit antenna with the same spectral resource. OFDM (Orthogonal Frequency Division Multiplexing) is applied to MIMO (Multiple-Input Multiple-Output) system to combat ISI (Inter-Symbol Interference) and frequency selective fading channel, which degrade MIMO system performance. But, orthogonality between subcarriers of OFDM can't be guaranteed under high-mobility condition. As a result, severe performance degradation due to ICI is induced. In this paper, both ICI and CAI (Co-Antenna Interference) which occurs due to correlation between multiple antennas, and performance degradation due to both ICI and CAI are analyzed. In addition to the proposed CIR (Channel Impulse Response) estimation method for avoiding loss in data transmission rate, HIC (Hybrid Interference Cancellation) approach for guaranteeing QoS of MIMO-OFDM receiver is proposed. We observe the results on analytical performance degradation due to both ICI & CAI are coincide with the simulation results and performance improvement due to HIC are also verified by simulation under SCM-E Sub-urban Macro MIMO channel.

• Journal of the Korea Society of Computer and Information
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• v.16 no.12
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• pp.59-69
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• 2011

Recently, as people's interest in health care has been rising, the health care service awareness and utilization has been increasing. However, the existing healthcare services have problems such as inconvenience of mobility, the low reliability of input for information and low accuracy of information provided as well. in this study, we developed the m-Health application by utilizing smart phone with improvement of these problems. This application provided the total of 5 services such as notification for risk of cardiovascular disease, personalized dietary recommendations targeted to 20s and 30s who do not properly manage their health care by bad habits. In addition, the benefits and problems of these services were found out through the analysis for the general importance and satisfaction of these services by Importance-Performance Analysis (IPA) technique. In result of IPA analysis, The six items such as 'input accuracy and reliability of information', 'content reliability', 'proper health service recommendations', etc. among 12 of the items needed to receive the effective services on m-Health were belonged to importance and satisfaction area with high level. And, in the 'information security', the importance is high but the satisfaction was low. In conclusion, the further study for strengthening security of information, service update provided with PHR to consistently keep the advantage of these services will be conducted.

• Korean Journal of Soil Science and Fertilizer
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• v.31 no.4
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• pp.407-413
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• 1998

The influence of the anion composition of simulated acid rain on cation leaching of two soils with different surface charge properties was examined. Four mixtures of mole ratio of $SO_4:NO_3$(1:0, 2:1, 1:1, 0:1) with pH 2.0 simulated acid rain were applied to an Inceptisols(Gyuam series) and Andisols(Pyeongdae series). The Andisols had higher $SO_4{^{2-}}$ adsorption capacity than the Inceptisols because of its higher point of zero charge(PZC, pH 6.5) than Inceptisols(PZC pH 3.1). Cation leaching in Andisols varied directly with the $NO_3$ content of the leaching input due to higher mobility of $NO_3$ compared with $SO_4$ that was absorbed. The pH of the Andisols was higher with the addition of $Na_2SO_4$ than the addition of $NaNO_3$ indicating that this soil behaves as a base and has a high $SO_4$ adsorption capacity. The relative $NO_3{^-}/SO_4{^{2-}}$ content input had no effect on cation leaching of the Inceptisols. Amounts of leaching on the Andisols by simulated acid rain were higher than Inceptisols. This experiment explained that anion composition of acid rain plays a significant role in the cation leaching of soils which are able to adsorb $SO_4$.

• ETRI Journal
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• v.42 no.4
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• pp.549-561
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• 2020

We developed a 0.1-㎛ metamorphic high electron mobility transistor and fabricated a W-band monolithic microwave integrated circuit chipset with our in-house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz-108 GHz band and achieved excellent spurious suppression. A low-noise amplifier (LNA) with a four-stage single-ended architecture using a common-source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W-band image-rejection mixer (IRM) with an external off-chip coupler was also designed. The IRM provided a conversion gain of 13 dB-17 dB for RF frequencies of 80 GHz-110 GHz and image-rejection ratios of 17 dB-19 dB for RF frequencies of 93 GHz-100 GHz.