Design and fabrication of the MMIC frequency doubler for 29 GHz local oscillator application

29GHz 국부 발진 신호용 MMIC 주파수 체배기의 설계 및 제작

  • Kim, Jin-Sung (Millimeter-wave INnovation Technology research center, MINT) ;
  • Lee, Seong-Dae (Millimeter-wave INnovation Technology research center, MINT) ;
  • Lee, Bok-Hyoung (Millimeter-wave INnovation Technology research center, MINT) ;
  • Kim, Sung-Chan (Millimeter-wave INnovation Technology research center, MINT) ;
  • Sul, Woo-Suk (Millimeter-wave INnovation Technology research center, MINT) ;
  • Lim, Byeong-Ok (Millimeter-wave INnovation Technology research center, MINT) ;
  • Kim, Sam-Dong (Millimeter-wave INnovation Technology research center, MINT) ;
  • Park, Hyun-Chang (Millimeter-wave INnovation Technology research center, MINT) ;
  • Park, Hyung-Moo (Millimeter-wave INnovation Technology research center, MINT) ;
  • Rhee, Jin-Koo (Millimeter-wave INnovation Technology research center, MINT)
  • 김진성 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이성대 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이복형 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 김성찬 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 설우석 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 임병옥 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 김삼동 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 박현창 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 박형무 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이진구 (동국대학교 밀리미터파 신기술 연구센터)
  • Published : 2001.11.25

Abstract

We demonstrate the MMIC (monolithic microwave integrated circuit) frequency doublers generating stable and low-cost 29 GHz local oscillator signals from 14.5 GHz input signals. These devices were designed and fabricated by using the M MIC integration process of $0.1\;{\mu}m$ gate-length PHEMTs (pseudomorphic high electron mobility transistors) and passive components. The measurements showed S11 or -9.2 dB at 145 GHz, S22 of -18.6 dG at 29 GHz and a minimum conversion loss of 18.2 dB at 14.5 GHz with an input power or 6 dBm. Fundamental signal of 14.5 GHz were suppressed below 15.2 dBe compared to the second harmonic signal at the output port, and the isolation characteristics of fundamental signal between the input and the output port were maintained above :i0 dB in the frequency range 10.5 GHz to 18.5 GHz. The chip size of the fabricated MMIC frequency doubler is $1.5{\times}2.2\;mm^2$.

밀리미터파 대역에서 안정적이고 경제적인 local oscillator (LO) 신호를 생성하기 위한 주파수 체배기를 설계 및 제작하였다. 주파수 체배기는 14.5 GHz를 입력받아 29 GHz를 생성하도록 설계되었으며, 측정 결과 14.5 GHz에서 S11이 -9.2 dB, 29 GHz에서 S22가 -18.6 dB 로 입력 측은 14.5 GHz에, 출력 측은 29GHz에 매칭이 되었다. 변환손실의 경우 14.5 GHz에서 입력전력 6 dBm일 때 최소 값인 18.2 dB를 보였으며, 출력 단에서의 주파수 스펙트럼 특성은 14.5 GHz에서 15.2dB의 값을 나타내었다. 또한 입력신호의 isolation특성은 10.5 GHz에서 18.5GHz까지 주파수 범위에서 30 dB이상의 값을 보였다. 제작된 MMIC(Microwave monolithic integrated circuits) 주파수 체배기의 칩 사이즈는 $1.5{\times}2.2\;mm^2$이다.

Keywords

References

  1. M. Funabashi, T. Inoue, K. Mauhshi, K. Hosoya, M. Kuzuhara, K. Kanekawa, Y. Kobayasi, 'A 60GHz MMIC stabilized frequency source composed of a 30GHz DRO and A Doubler: IEEE MTT S Intl. Microwave Symp. Digest, pp, 71-74, 1995 https://doi.org/10.1109/MWSYM.1995.406095
  2. A. Werthof, H. Tischer, T. Grave, 'High Gain PHEMT Frequency Doubler for 76GHz Automotive Radar', IEEE MTT-S Intl. Microwave Symp, Digest vol. 1, pp,107-109, Phoenix, USA, May 2001 https://doi.org/10.1109/MWSYM.2001.966850
  3. Matthew Morgan, Sander Weinreb, 'A FULL WAVEGUIDE BAND MMIC TRIPLER FOR 75-110GHz', IEEE MTT-S Intl. Microwave Symp. Digest, pp. 103-106, Pheonix, USA, May 2001 https://doi.org/10.1109/MWSYM.2001.966849
  4. Behzad Razavi, 'RF Microelectronics', Prentice Hall, pp, 15, 1998
  5. Yasushi Shizuki, Yumi Fuchida, Fumio Sasaki, Kazuhiro Arai, Shigeu Watanebe, 'A K band MMIC frequency doubler using resistive series feedback circuit', IEICE Transactions on Electronics, V.E83-C No.5, pp. 759-766, May 2000
  6. John Papapolymerou, Jack East, Linda P. B. Katehi, 'W-band finite ground coplanar monolithic multipliers', IEEE MTT, Vol.47 No.5, pp, 614-619, May 1999 https://doi.org/10.1109/22.763163
  7. IC-CAP User's Guide, Agilent
  8. Seong-Dae Lee, Yeon-Sik Chae, Yong-Soon Yoon, Jin Seub Yoon, Eung-Ho Rhee, Jin-Koo Rhee, 'Studies on the MMIC Power Amplifier using the AlGaAs/lnGaAs /GaAs PHEMT', Journal of KITE vol. 38 SD. no. 1, pp. 30-36 Jan. 2001
  9. Seong Dae Lee, Sung-Chan Kim, Bok Hyoung Lee, Woo Suk Sul, Byeong-Ok Lim, Dan An, Yong-Soon Yoon, Sam-Dong Kim, Dong-Hoon Shin, Jin-Koo Rhee, 'Design and Fabrication of the 0.1${\mu}m{\Gamma}$ Shaped Gate PHEMT's for Millimeter-Waves', JKEES vol. 1, no. 1, pp. 73-78, May, 2001