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http://dx.doi.org/10.5762/KAIS.2015.16.12.8643

GaN HPA Monolithic Microwave Integrated Circuit for Ka band Satellite Down link Payload  

Ji, Hong-Gu (ETRI (Electronics and Telecommunications Research Institute))
Publication Information
Journal of the Korea Academia-Industrial cooperation Society / v.16, no.12, 2015 , pp. 8643-8648 More about this Journal
Abstract
In this paper presents the design and demonstrate 8 W 3-stage HPA(High Power Amplifier) MMIC(Monolithic Microwave Integrated Circuits) for Ka-band down link satellite communications payload system at 19.5 GHz ~ 22 GHz frequency band. The HPA MMIC consist of 3-stage GaN HEMT(Hight Electron Mobility Transistors). The gate periphery of $1^{st}$ stage, $2^{nd}$ stage and output stage is determined $8{\times}50{\times}2$ um, $8{\times}50{\times}4$ um and $8{\times}50{\times}8$ um, respectively. The fabricated HPA MMIC shows size $3,400{\times}3,200um^2$, small signal gain over 29.6 dB, input matching -8.2 dB, output matching -9.7 dB, output power 39.1 dBm and PAE 25.3 % by using 0.15 um GaN technology at 20 V supply voltage in 19.5~22 GHz frequency band. Therefore, this HPA MMIC is believed to be adaptable Ka-band satellite communication payloads down link system.
Keywords
GaN; MMIC; Ka-band; HPA; Payload;
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