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http://dx.doi.org/10.5515/KJKIEES.2013.24.4.394

The Design of Switching-Mode Power Amplifier and Ruggedness Characteristics Analysis of Power Amplifier Using GaN HEMT  

Choi, Gil-Wong (Radar R&D Center, Samsung Thales)
Lee, Bok-Hyoung (Radar R&D Center, Samsung Thales)
Kim, Hyoung-Joo (Radar R&D Center, Samsung Thales)
Kim, Sang-Hoon (Department of Electronics Convergence, Kwangwoon University)
Choi, Jin-Joo (Department of Electronics Convergence, Kwangwoon University)
Kim, Dong-Hwan (Agency for Defence Development)
Kim, Seon-Joo (Agency for Defence Development)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.24, no.4, 2013 , pp. 394-402 More about this Journal
Abstract
This paper presents design, fabrication and ruggedness test of switching-mode power amplifier using GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) for S-band radar applications. The power amplifier is designed to Class-F for high efficiency. The input signal for the measurement of the power amplifier is pulse signal at $100{\mu}s$ pulse width and duty cycle of 10 %. The measurement results of the fabricated Class-F power amplifier are a power gain of 10.8 dB, an output power of 40.8 dBm, a power added efficiency(PAE) of 54.2 %, and a drain efficiency of 62.6 %, at the center frequency. We proposed reliability test set-up of a power amplifier for ruggedness test. And we measured output power and efficiency according to VSWR(Voltage Standing Wave Ratio) variation. The designed power amplifier achieved output power of 32.6~41.1 dBm and drain efficiency of 23.4~63 % by changing VSWR, respectively.
Keywords
GaN(Galium Nitride) HEMT; High Efficiency; Class-F; Ruggedness; VSWR(Voltage Standing Wave Ratio);
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Times Cited By KSCI : 1  (Citation Analysis)
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