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DC ∼ 45 GHz CPW Wideband Distributed Amplifier Using MHEMT  

Jin Jin-Man (Millimeter-wave INnovation Technology research)
Lee Bok-Hyung (Millimeter-wave INnovation Technology research)
Lim Byeong-Ok (Millimeter-wave INnovation Technology research)
An Dan (Millimeter-wave INnovation Technology research)
Lee Mun-Kyo (Millimeter-wave INnovation Technology research)
Lee Sang-Jin (Millimeter-wave INnovation Technology research)
Ko Du-Hyun (Millimeter-wave INnovation Technology research)
Beak Yong Hyun (Millimeter-wave INnovation Technology research)
Oh Jung-Hun (Millimeter-wave INnovation Technology research)
Chae Yeon-Sik (Millimeter-wave INnovation Technology research)
Park Hyung-Moo (Millimeter-wave INnovation Technology research)
Kim Sam-Dong (Millimeter-wave INnovation Technology research)
Rhee Jin-Koo (Millimeter-wave INnovation Technology research)
Publication Information
Abstract
In this paper, CPW wideband distributed amplifier was designed and fabricated using 0.1 $\mum$ InGaAs/InAlAs/GaAs Metamorphic HEMT(High Electron Mobility Transistor). The DC characteristics of MHEMT are 442 mA/mm of drain current density, 409 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 140 GHz and the maximum oscillation frequency(fmax) is 447 GHz. The distributed amplifier was designed using 0.1 $\mum$ MHEMT and CPW technology. We designed the structure of CPW curve, tee and cross to analyze the discontinuity characteristics of the CPW line. The MIMIC circuit patterns were optimized electromagnetic field through momentum. The designed distributed amplifier was fabricated using our MIMIC standard process. The measured results show S21 gain of above 6 dB from DC to 45 GHz. Input reflection coefficient S11 of -10 dB, and output reflection coefficient S22 of -7 dB at 45 GHz, respectively. The chip size of the fabricated CPW distributed amplifier is 2.0 mm$\times$l.2 mm.
Keywords
MIMIC; Metamorphic HEMT; CPW; distributed amplifier;
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