• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제37권1호
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• pp.48-55
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• 2024

The changes in threshold voltage and DIBL were investigated for changes in remanent polarization P_r and coercive field E_c, which determine the characteristics of the P-E hysteresis curve of ferroelectric in NCFET (negative capacitance FET). The threshold voltage and DIBL (drain-induced barrier lowering) were observed for a junctionless double gate MOSFET using a gate oxide structure of MFMIS (metal-ferroelectric-metal-insulator-semiconductor). To obtain the threshold voltage, series-type potential distribution and second derivative method were used. As a result, it can be seen that the threshold voltage increases when P_r decreases and E_c increases, and the threshold voltage is also maintained constant when the P_r/E_c is constant. However, as the drain voltage increases, the threshold voltage changes significantly according to P_r/E_c, so the DIBL greatly changes for P_r/E_c. In other words, when P_r/E_c=15 pF/cm, DIBL showed a negative value regardless of the channel length under the conditions of ferroelectric thickness of 10 nm and SiO₂ thickness of 1 nm. The DIBL value was in the negative or positive range for the channel length when the P_r/E_c is 25 pF/cm or more under the same conditions, so the condition of DIBL=0 could be obtained. As such, the optimal condition to reduce short channel effects can be obtained since the threshold voltage and DIBL can be adjusted according to the device dimension of NCFET and the P_r and E_c of ferroelectric.

• Journal of the Institute of Electronics Engineers of Korea TE
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• 제39권4호
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• pp.335-340
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• 2002

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4${\AA}$ and 814${\AA}$, which have the gate area $10^3cm^2$. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• The Korean Journal of Physiology and Pharmacology
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• 제10권5호
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• pp.255-261
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• 2006

Melittin-induced nociceptive responses are mediated by selective activation of capsaicin-sensitive primary afferent fibers and are modulated by excitatory amino acid receptor, cyclooxygenase, protein kinase C and serotonin receptor. The present study was undertaken to investigate the peripheral and spinal actions of voltage-gated calcium channel antagonists on melittin-induced nociceptive responses. Changes in mechanical threshold and number of flinchings were measured after intraplantar (i.pl.) injection of melittin $(30\;{\mu}g/paw)$ into mid-plantar area of hindpaw. L-type calcium channel antagonists, verapamil [intrathecal (i.t.), 6 or $12\;{\mu}g$; i.pl.,100 & $200\;{\mu}g$; i.p., 10 or 30 mg], N-type calcium channel blocker, ${\omega}-conotoxin$ GVIA (i.t., 0.1 or $0.5\;{\mu}g$; i.pl., $5\;{\mu}g$) and P-type calcium channel antagonist, ${\omega}-agatoxin$ IVA (i.t., $0.5\;{\mu}g$; i.pl., $5\;{\mu}g$) were administered 20 min before or 60 min after i.pl. injection of melittin. Intraplantar pre-treatment and i.t. pre- or post-treatment of verapamil and ${\omega}-conotoxin$ GVIA dose-dependently attenuated the reduction of mechanical threshold, and melittin-induced flinchings were inhibited by i.pl. or i.t. pre-treatment of both antagonists. P-type calcium channel blocker, ${\omega}-agatoxin$ IVA, had significant inhibitory action on flinching behaviors, but had a limited effect on melittin-induced decrease in mechanical threshold. These experimental findings suggest that verapamil and ${\omega}-conotoxin$ GVIA can inhibit the development and maintenance of melittin-induced nociceptive responses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.78-81
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• 1997

The photocharge voltage technique is based on the measurement of a small electrical potential difference which appears on any solid body when subject to illumunation by a modulated laser light beam. This voltage is proportional to the induced change in the surface electrical charge and is nondestructively measured on various materials such as conductors, semicinductors and dielectrics. In this paper, photocharge voltage on conductors, semiconductors and dielectrics are measured nondestructively using a capacitative coupling. The test structures and the validity of this system to characterize the surface properties for soled materials are shown.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권3호
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• pp.173-181
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• 2005

A new two dimensional (2-D) model for the potential distribution of fully depleted short-channel ion-implanted silicon MESFET's has been presented in this paper. The solution of the 2-D Poisson's equation has been considered as the superposition of the solutions of 1-D Poisson's equation in the lateral direction and the 2-D homogeneous Laplace equation with suitable boundary conditions. The minimum bottom potential at the interface of the depletion region due to the metal-semiconductor junction at the Schottky gate and depletion region due to the substrate-channel junction has been used to investigate the drain-induced barrier lowering (DIBL) and its effects on the threshold voltage of the device. Numerical results have been presented for the potential distribution and threshold voltage for different parameters such as the channel length, drain-source voltage, and implanted-dose and silicon film thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제11권9호
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• pp.687-692
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• 1998

Silicon doped $Al_{0.32}Ga_{0.68}As$ were growth by molecular beam epitaxy. Electroreflectance(ER) spectra of the $E_1$ transition of Schottky barrier Au/n-$Al_{0.32}Ga_{0.68}As$ have been measured at various modulation voltage($V_{ac}$) and dc bias voltage($V_{bias}$). from the $E_1$peak, band gap energy of the $Al_{0.32}Ga_{0.68}As$ is 1.883 eV which corresponds to an Al composition of 32%. As modulation voltage($V_{bias}$) is changed, a line shape at the $E_1$transition does not change, but its amplitude varies linearly. The amplitude of $E_1$signal decrease with increasing the forward dc bias voltage($V_{bias}$), but the line shape does not change. It suggests that the low field theory rather than Franz-Keldysh oscillation is Required to interpret spectra. Also, spectra at the $E_1$transition were broadened with increasing the reverse dc bias voltage($V_{bias}$) which suggests the presence of Field-induced broadening.

• Korean Journal of Materials Research
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• 제24권6호
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• pp.326-337
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• 2014

The use of solar energy generation is steadily increasing, and photovoltaic modules are connected in series to generate higher voltage and power. However, solar panels are exposed to high-voltage stress (up to several hundreds of volts) between grounded module frames and the solar cells. Frequent high-voltage stress causes a power-drop in the modules, and this kind of degradation is called potential induced degradation (PID). Due to PID, a significant loss of power and performance has been reported in recent years. Many groups have suggested how to prevent or reduce PID, and have tried to determine the origin and mechanism of PID. Even so, the mechanism of PID is still unclear. This paper is focused on understanding the PID of crystalline-silicon solar cells and modules. A background for PID, as well as overviews of research on factors accelerating PID, mechanisms involving sodium ions, PID test methods, and possible solutions to the problem of PID, are covered in this paper.

• The Transactions of The Korean Institute of Electrical Engineers
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• 제65권12호
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• pp.1958-1964
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• 2016

AC railway feeding system use single phase to supply power to the railway vehicles. And the system use the rail track as a return current path, so that current flows in the rail. In this situation inductive interference on communication system and unsafe environment can appear on railway system. Therefore knowing the current distribution of catenary system and analysing the return current is required. In this study detail return current distribution was analyzed by modeling the catenary system as 4-conductors group. The distribution characteristics and trends of return current were studied by using the PSCAD/EMTDC and FDTD method that based on Maxwell equation was used to calculate the induced voltage. Simulation code was made by MATLAB. Using this study result data, we can suggest the proper installation location of digital device and these data can be used for additional studies related to return current or induced voltage as a base data.

• Journal of Electrical Engineering and Technology
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• 제9권6호
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• pp.2187-2193
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• 2014

In this paper, we propose a method for suppressing shaft voltage by modifying the rotor shape and the permanent magnets in interior permanent magnet type high voltage motors. The shaft voltage, which adversely affects the bearing by occurring bearing current, is induced by parasitic components and the leakage flux in motor-driven systems as well as inherent linkage flux between main magnetic flux and shaft according to rotor configuration. Thus, shaft voltage should be analyzed and considered under inverter-driven and non-inverter-driven conditions because inherent linkage flux can analyze under non-inverter-driven condition. In this study, we designed re-arrangement magnet and re-structuring rotor to minimize the shaft voltage. In addition, we optimized the proposed models. The shaft voltage suppression effect of the designed model was validated experimentally and by comparative finite element analysis.

• Journal of Electrical Engineering and Technology
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• 제8권4호
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• pp.938-944
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• 2013

In this paper, we propose a method for suppressing shaft voltage by modifying the shape of the rotor and the permanent magnets in interior permanent magnet-type-high-voltage motors. Shaft voltage, which is induced by parasitic components and the leakage flux in motor-driven systems, adversely affects their bearings. In order to minimize shaft voltage, we designed a magnet rearrangement and rotor re-structuring of the motor. The shaft voltage suppression effect of the designed model was confirmed experimentally and by comparative finite element analysis.