Impact of Remanent Polarization and Coercive Field on Threshold Voltage and Drain-Induced Barrier Lowering in NCFET (negative capacitance FET) (NCFET (negative capacitance FET)에서 잔류분극과 항전계가 문턱전압과 드레인 유도장벽 감소에 미치는 영향)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- 제37권1호
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- pp.48-55
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- 2024